公开(公告)号：US20240071773A1

公开(公告)日：2024-02-29

申请号：US18232916

申请日：2023-08-11

Applicant: Applied Materials, Inc.

Inventor： Lei Liao ,  Yichuan Ling ,  Zhiyu Huang ,  Hideyuki Kanzawa ,  Fenglin Wang ,  Rajesh Prasad ,  Yung-Chen Lin ,  Chi-I Lang ,  Ho-yung David Hwang ,  Lequn Liu

IPC: H01L21/3115 ,  H01L21/02

CPC classification number: H01L21/31155 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02167

Abstract: Exemplary methods of semiconductor processing may include forming a layer of silicon-containing material on a semiconductor substrate. The methods may include performing a post-formation treatment on the layer of silicon-containing material to yield a treated layer of silicon-containing material. The methods may include contacting the treated layer of silicon-containing material with an adhesion agent. The methods may include forming a layer of a resist material on the treated layer of silicon-containing material.

公开(公告)号：US20240379376A1

公开(公告)日：2024-11-14

申请号：US18314481

申请日：2023-05-09

Applicant: Applied Materials, Inc.

Inventor： Rajesh Prasad ,  Yung-Chen Lin ,  Zhiyu Huang ,  Fenglin Wang ,  Chi-I Lang ,  Hoyung David Hwang ,  Edwin A. Arevalo ,  KyuHa Shim

IPC: H01L21/3115 ,  C23C14/48 ,  G03F7/004 ,  G03F7/09 ,  G03F7/11

Abstract: Disclosed herein are approaches for reducing EUV dose during formation of a patterned metal oxide photoresist. In one approach, a method may include providing a stack of layers atop a substrate, the stack of layers comprising a film layer, and implanting the film layer with ions. The method may further include depositing a metal oxide photoresist atop the film layer, and patterning the metal oxide photoresist.

公开(公告)号：US20240184207A1

公开(公告)日：2024-06-06

申请号：US18379106

申请日：2023-10-11

Applicant: Applied Materials, Inc.

Inventor： Zhiyu Huang ,  BOCHENG CAO ,  SIYU ZHU ,  HANG YU ,  YUNG-CHEN LIN ,  CHI-I LANG

IPC: G03F7/11

CPC classification number: G03F7/11

Abstract: Embodiments disclosed herein include a method of developing a patterning stack. In an embodiment, the method comprises providing a patterning stack, where the patterning stack comprises an underlayer and a photoresist over the underlayer, and where the underlayer has a first adhesion strength with the photoresist. The method may further comprise exposing and developing the photoresist with electromagnetic radiation and a developer, where scum remains on a surface of the underlayer. In an embodiment, the method further comprises treating the underlayer so that the underlayer has a second adhesion strength with the scum, and removing the scum.