公开(公告)号：US20140312355A1

公开(公告)日：2014-10-23

申请号：US13866286

申请日：2013-04-19

申请人： AVOGY, INC.

发明人： Isik C. Kizilyalli ,  Dave P. Bour ,  Thomas R. Prunty ,  Hui Nie ,  Quentin Diduck ,  Ozgur Aktas

IPC分类号： H01L29/66 ,  H01L29/868 ,  H01L29/872 ,  H01L29/20

CPC分类号： H01L29/66143 ,  H01L29/0619 ,  H01L29/2003 ,  H01L29/66121 ,  H01L29/66212 ,  H01L29/868 ,  H01L29/872

摘要： A method for fabricating a merged p-i-n Schottky (MPS) diode in gallium nitride (GaN) based materials includes providing an n-type GaN-based substrate having a first surface and a second surface. The method also includes forming an n-type GaN-based epitaxial layer coupled to the first surface of the n-type GaN-based substrate, and forming a p-type GaN-based epitaxial layer coupled to the n-type GaN-based epitaxial layer. The method further includes removing portions of the p-type GaN-based epitaxial layer to form a plurality of dopant sources, and regrowing a GaN-based epitaxial layer including n-type material in regions overlying portions of the n-type GaN-based epitaxial layer, and p-type material in regions overlying the plurality of dopant sources. The method also includes forming a first metallic structure electrically coupled to the regrown GaN-based epitaxial layer.

摘要翻译： 一种用于制造基于氮化镓（GaN）基材料的合并p-i-n肖特基（MPS）二极管的方法包括提供具有第一表面和第二表面的n型GaN基衬底。 该方法还包括形成耦合到n型GaN基衬底的第一表面的n型GaN基外延层，以及形成与n型GaN基外延结合的p型GaN基外延层 层。 该方法还包括去除p型GaN基外延层的部分以形成多个掺杂源，并且在覆盖n型GaN基外延的部分的区域中重新生长包括n型材料的GaN基外延层 层和p型材料在覆盖多个掺杂剂源的区域中。 该方法还包括形成电耦合到再生长的GaN基外延层的第一金属结构。

公开(公告)号：US20150255582A1

公开(公告)日：2015-09-10

申请号：US14657949

申请日：2015-03-13

申请人： AVOGY, INC.

发明人： Linda Romano ,  Andrew Edwards ,  Dave P. Bour ,  Isik C. Kizilyalli

IPC分类号： H01L29/66 ,  H01L29/808

CPC分类号： H01L29/66916 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/205 ,  H01L29/452 ,  H01L29/66924 ,  H01L29/8083

摘要： A vertical III-nitride field effect transistor includes a drain comprising a first III-nitride material, a drain contact electrically coupled to the drain, and a drift region comprising a second III-nitride material coupled to the drain and disposed adjacent to the drain along a vertical direction. The field effect transistor also includes a channel region comprising a third III-nitride material coupled to the drift region, a gate region at least partially surrounding the channel region, and a gate contact electrically coupled to the gate region. The field effect transistor further includes a source coupled to the channel region. The source includes a GaN-layer coupled to an InGaN layer. The channel region is disposed between the drain and the source along the vertical direction such that current flow during operation of the vertical III-nitride field effect transistor is along the vertical direction.

摘要翻译： 垂直III族氮化物场效应晶体管包括：包含第一III族氮化物材料的漏极，与漏极电耦合的漏极接触点;以及漂移区域，包括耦合到漏极并邻近漏极设置的第二III族氮化物材料 垂直方向 场效应晶体管还包括沟道区，该沟道区包括耦合到漂移区的第三III族氮化物材料，至少部分围绕沟道区的栅极区和电耦合到栅极区的栅极接触。 场效应晶体管还包括耦合到沟道区的源极。 源包括耦合到InGaN层的GaN层。 沟道区域沿着垂直方向设置在漏极和源极之间，使得垂直III族氮化物场效应晶体管的工作期间的电流沿着垂直方向。

公开(公告)号：US20170133481A1

公开(公告)日：2017-05-11

申请号：US15156979

申请日：2016-05-17

申请人： Avogy, Inc.

发明人： Isik C. Kizilyalli ,  Dave P. Bour ,  Thomas R. Prunty ,  Gangfeng Ye

IPC分类号： H01L29/66 ,  H01L21/02 ,  H01L29/06 ,  H01L29/04 ,  H01L29/861 ,  H01L29/20

摘要： A method of fabricating an electronic device includes providing a III-V substrate having a hexagonal crystal structure and a normal to a growth surface characterized by a misorientation from the direction of between 0.15° and 0.65°. The method also includes growing a first III-V epitaxial layer coupled to the III-V substrate and growing a second III-V epitaxial layer coupled to the first III-V epitaxial layer. The method further includes forming a first contact in electrical contact with the III-V substrate and forming a second contact in electrical contact with the second III-V epitaxial layer.

公开(公告)号：US20160005835A1

公开(公告)日：2016-01-07

申请号：US14853930

申请日：2015-09-14

申请人： AVOGY, INC.

发明人： Isik C. Kizilyalli ,  Dave P. Bour ,  Thomas R. Prunty ,  Hui Nie ,  Quentin Diduck ,  Ozgur Aktas

IPC分类号： H01L29/66 ,  H01L29/868 ,  H01L29/872 ,  H01L29/20

CPC分类号： H01L29/66143 ,  H01L29/0619 ,  H01L29/2003 ,  H01L29/66121 ,  H01L29/66212 ,  H01L29/868 ,  H01L29/872

摘要： A method for fabricating a merged p-i-n Schottky (MPS) diode in gallium nitride (GaN) based materials includes providing an n-type GaN-based substrate having a first surface and a second surface. The method also includes forming an n-type GaN-based epitaxial layer coupled to the first surface of the n-type GaN-based substrate, and forming a p-type GaN-based epitaxial layer coupled to the n-type GaN-based epitaxial layer. The method further includes removing portions of the p-type GaN-based epitaxial layer to form a plurality of dopant sources, and regrowing a GaN-based epitaxial layer including n-type material in regions overlying portions of the n-type GaN-based epitaxial layer, and p-type material in regions overlying the plurality of dopant sources. The method also includes forming a first metallic structure electrically coupled to the regrown GaN-based epitaxial layer.

摘要翻译： 一种用于制造基于氮化镓（GaN）基材料的合并p-i-n肖特基（MPS）二极管的方法包括提供具有第一表面和第二表面的n型GaN基衬底。 该方法还包括形成耦合到n型GaN基衬底的第一表面的n型GaN基外延层，以及形成与n型GaN基外延结合的p型GaN基外延层 层。 该方法还包括去除p型GaN基外延层的部分以形成多个掺杂源，并且在覆盖n型GaN基外延的部分的区域中重新生长包括n型材料的GaN基外延层 层和p型材料在覆盖多个掺杂剂源的区域中。 该方法还包括形成电耦合到再生长的GaN基外延层的第一金属结构。

公开(公告)号：US09525039B2

公开(公告)日：2016-12-20

申请号：US14853930

申请日：2015-09-14

申请人： AVOGY, INC.

发明人： Isik C. Kizilyalli ,  Dave P. Bour ,  Thomas R. Prunty ,  Hui Nie ,  Quentin Diduck ,  Ozgur Aktas

IPC分类号： H01L29/872 ,  H01L29/66 ,  H01L29/20 ,  H01L29/868 ,  H01L29/06

CPC分类号： H01L29/66143 ,  H01L29/0619 ,  H01L29/2003 ,  H01L29/66121 ,  H01L29/66212 ,  H01L29/868 ,  H01L29/872

摘要： A method for fabricating a merged p-i-n Schottky (MPS) diode in gallium nitride (GaN) based materials includes providing an n-type GaN-based substrate having a first surface and a second surface. The method also includes forming an n-type GaN-based epitaxial layer coupled to the first surface of the n-type GaN-based substrate, and forming a p-type GaN-based epitaxial layer coupled to the n-type GaN-based epitaxial layer. The method further includes removing portions of the p-type GaN-based epitaxial layer to form a plurality of dopant sources, and regrowing a GaN-based epitaxial layer including n-type material in regions overlying portions of the n-type GaN-based epitaxial layer, and p-type material in regions overlying the plurality of dopant sources. The method also includes forming a first metallic structure electrically coupled to the regrown GaN-based epitaxial layer.

公开(公告)号：US09508838B2

公开(公告)日：2016-11-29

申请号：US14657949

申请日：2015-03-13

申请人： Avogy, Inc.

发明人： Linda Romano ,  Andrew Edwards ,  Dave P. Bour ,  Isik C. Kizilyalli

IPC分类号： H01L29/66 ,  H01L29/808 ,  H01L29/20 ,  H01L29/45 ,  H01L29/201 ,  H01L29/205 ,  H01L29/10

CPC分类号： H01L29/66916 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/205 ,  H01L29/452 ,  H01L29/66924 ,  H01L29/8083

摘要： A vertical III-nitride field effect transistor includes a drain comprising a first III-nitride material, a drain contact electrically coupled to the drain, and a drift region comprising a second III-nitride material coupled to the drain and disposed adjacent to the drain along a vertical direction. The field effect transistor also includes a channel region comprising a third III-nitride material coupled to the drift region, a gate region at least partially surrounding the channel region, and a gate contact electrically coupled to the gate region. The field effect transistor further includes a source coupled to the channel region. The source includes a GaN-layer coupled to an InGaN layer. The channel region is disposed between the drain and the source along the vertical direction such that current flow during operation of the vertical III-nitride field effect transistor is along the vertical direction.

摘要翻译： 垂直III族氮化物场效应晶体管包括：包含第一III族氮化物材料的漏极，与漏极电耦合的漏极接触点;以及漂移区域，包括耦合到漏极并邻近漏极设置的第二III族氮化物材料 垂直方向 场效应晶体管还包括沟道区，该沟道区包括耦合到漂移区的第三III族氮化物材料，至少部分围绕沟道区的栅极区和电耦合到栅极区的栅极接触。 场效应晶体管还包括耦合到沟道区的源极。 源包括耦合到InGaN层的GaN层。 沟道区域沿着垂直方向设置在漏极和源极之间，使得垂直III族氮化物场效应晶体管的工作期间的电流沿垂直方向。

公开(公告)号：US09159799B2

公开(公告)日：2015-10-13

申请号：US13866286

申请日：2013-04-19

申请人： AVOGY, INC.

发明人： Isik C. Kizilyalli ,  Dave P. Bour ,  Thomas R. Prunty ,  Hui Nie ,  Quentin Diduck ,  Ozgur Aktas

IPC分类号： H01L29/872 ,  H01L29/66 ,  H01L29/20 ,  H01L29/868

CPC分类号： H01L29/66143 ,  H01L29/0619 ,  H01L29/2003 ,  H01L29/66121 ,  H01L29/66212 ,  H01L29/868 ,  H01L29/872

摘要： A method for fabricating a merged p-i-n Schottky (MPS) diode in gallium nitride (GaN) based materials includes providing an n-type GaN-based substrate having a first surface and a second surface. The method also includes forming an n-type GaN-based epitaxial layer coupled to the first surface of the n-type GaN-based substrate, and forming a p-type GaN-based epitaxial layer coupled to the n-type GaN-based epitaxial layer. The method further includes removing portions of the p-type GaN-based epitaxial layer to form a plurality of dopant sources, and regrowing a GaN-based epitaxial layer including n-type material in regions overlying portions of the n-type GaN-based epitaxial layer, and p-type material in regions overlying the plurality of dopant sources. The method also includes forming a first metallic structure electrically coupled to the regrown GaN-based epitaxial layer.

摘要翻译： 一种用于制造基于氮化镓（GaN）基材料的合并p-i-n肖特基（MPS）二极管的方法包括提供具有第一表面和第二表面的n型GaN基衬底。 该方法还包括形成耦合到n型GaN基衬底的第一表面的n型GaN基外延层，以及形成与n型GaN基外延结合的p型GaN基外延层 层。 该方法还包括去除p型GaN基外延层的部分以形成多个掺杂源，并且在覆盖n型GaN基外延的部分的区域中重新生长包括n型材料的GaN基外延层 层和p型材料在覆盖多个掺杂剂源的区域中。 该方法还包括形成电耦合到再生长的GaN基外延层的第一金属结构。