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公开(公告)号:US20170233865A1
公开(公告)日:2017-08-17
申请号:US15501631
申请日:2015-07-24
Applicant: BASF SE
Inventor: Julia STRAUTMANN , Rocco PACIELLO , Thomas SCHAUB , Kerstin SCHIERLE-ARNDT , Daniel LOEFFLER , Hagen WILMER , Felix EICKEMEYER , Florian BLASBERG , Carolin LIMBURG
IPC: C23C16/18 , C23C16/455
CPC classification number: C23C16/18 , C23C16/45553
Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates. More specifically, the present invention relates to a process comprising bringing a compound of general formula (I) into the gaseous or aerosol state and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R11, R12, R13, R14, R15, R16, R17, R18 are independent of each other hydrogen, an alkyl group, an aryl group, or a trialkylsilyl group, R21, R22, R23, R24 are independent of each other an alkyl group, an aryl group, or a trialkylsilyl group, n is 1 or 2, M is a metal or semimetal, X is a ligand which coordinates M, and m is an integer from 0 to 3.
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公开(公告)号:US20170175267A1
公开(公告)日:2017-06-22
申请号:US15325840
申请日:2015-07-22
Applicant: BASF SE
Inventor: Julia STRAUTMANN , Rocco PACIELLO , Thomas SCHAUB , Felix EICKEMEYER , Daniel LOEFFLER , Hagen WILMER , Udo RADIUS , Johannes BERTHEL , Florian HERING
IPC: C23C16/455 , C07F15/04 , C07F15/06
Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. In detail the present invention relates a process comprising bringing a compound of general formula (I) into the gaseous or aerosol state (Fig.) and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R1 and R4 are independent of each other an alkyl group, an aryl group or a trialkylsilyl group, R2, R3, R5 and R6 are independent of each other hydrogen, an alkyl group, an aryl group or a trialkylsilyl group, n is an integer from 1 to 3, M is Ni or Co, X is a ligand which coordinates M, and m is an integer from 0 to 4.
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