公开(公告)号：US11377748B2

公开(公告)日：2022-07-05

申请号：US16762717

申请日：2018-11-19

Applicant: BASF SE

Inventor： Nadine Engelhardt ,  Dieter Mayer ,  Marco Arnold ,  Alexander Fluegel ,  Charlotte Emnet ,  Lucas Benjamin Henderson

IPC: C25D3/18 ,  C25D7/12 ,  C25D5/02

Abstract: A cobalt electrodeposition composition comprising cobalt ions, and particular leveling agents comprising X1—CO—O—R11, X1—SO2—O—R11, X1—PO(OR11)2, X1—SO—O—R11 functional groups, wherein X1 is a divalent group selected from (i) a chemical bond (ii) aryl, (iii) C1 to C12 alkandiyl, which may be interrupted by O atoms, (iv) an arylalkyl group —X11—X12—, (v) an alkylaryl group —X12—X11—, and (vi) —(O—C2H3R12)mO—, R11 is selected from H and C1 to C4 alkyl. R12 is selected from H and C1 to C4 alkyl, X12 is a divalent aryl group, X11 is a divalent C1 to C15 alkandiyl group.

公开(公告)号：US20230203695A1

公开(公告)日：2023-06-29

申请号：US17565059

申请日：2021-12-29

Applicant: BASF SE

Inventor： Charlotte Emnet ,  Lucas Benjamin Henderson ,  Alexander Fluegel ,  Sathana Kitayaporn ,  Nadine Engelhardt

IPC: C25D3/38 ,  C25D7/12 ,  C25D5/02 ,  H01L21/768

CPC classification number: C25D3/38 ,  C25D7/123 ,  C25D5/02 ,  H01L21/76873 ,  H01L21/76879 ,  H01L23/53228

Abstract: Described herein is a composition for depositing copper on a semiconductor substrate, the composition including
(a) copper ions;

(b) an additive of formula S1





(c) a complexing agent; and

(d) optionally a buffer or base capable of adjusting the pH to a pH of from 7 to 13;

where the variables are as defined herein; and

where the pH of the composition is from 7 to 13 and where the composition is free of any cyanide.

公开(公告)号：US20220018035A1

公开(公告)日：2022-01-20

申请号：US17312737

申请日：2019-12-10

Applicant: BASF SE

Inventor： Sathana Katayaporn ,  Charlotte Emnet ,  Dieter Mayer ,  Nadine Engelhardt ,  Marco Arnold ,  Lucas Benjamin Henderson ,  Alexander Fluegel

IPC: C25D3/12 ,  C25D7/12 ,  C25D5/18

Abstract: Described herein is a composition including metal ions consisting essentially of cobalt ions, and a specific monomeric and polymeric suppressing agent including a carboxylic, sulfonic, sulfinic, phosphonic, or phosphinic acid functional groups which show a suppressing effect that is required for void-free bottom-up filling of nanometer-sized recessed features.

公开(公告)号：US12098473B2

公开(公告)日：2024-09-24

申请号：US17312737

申请日：2019-12-10

Applicant: BASF SE

Inventor： Sathana Kitayaporn ,  Charlotte Emnet ,  Dieter Mayer ,  Nadine Engelhardt ,  Marco Arnold ,  Lucas Benjamin Henderson ,  Alexander Fluegel

IPC: C25D3/18 ,  C25D3/12 ,  C25D5/18 ,  C25D7/12

CPC classification number: C25D3/18 ,  C25D3/12 ,  C25D5/18 ,  C25D7/123

Abstract: Described herein is a composition including metal ions consisting essentially of cobalt ions, and a specific monomeric and polymeric suppressing agent including a carboxylic, sulfonic, sulfinic, phosphonic, or phosphinic acid functional groups which show a suppressing effect that is required for void-free bottom-up filling of nanometer-sized recessed features.

公开(公告)号：US20230203694A1

公开(公告)日：2023-06-29

申请号：US17564979

申请日：2021-12-29

Applicant: BASF SE

Inventor： Charlotte Emnet ,  Lucas Benjamin Henderson ,  Alexander Fluegel ,  Sathana Kitayaporn ,  Nadine Engelhardt

IPC: C25D3/38 ,  C25D7/12 ,  C25D5/00

CPC classification number: C25D3/38 ,  C25D7/123 ,  C25D5/605

Abstract: Described herein is a composition for depositing copper on a semiconductor substrate, the composition including

(a) copper ions;
(b) a grain refiner of formula G1








or salts thereof


(c) a complexing agent; and
(d) optionally a buffer or a base capable of adjusting the pH to a pH of from 7 to 13;
where the variables are as defined herein; and
where the pH of the composition is from 7 to 13.