公开(公告)号：US3572894A

公开(公告)日：1971-03-30

申请号：US3572894D

申请日：1968-12-27

Applicant: BELL TELEPHONE LABOR INC

Inventor： GUGGENHEIM HOWARD J ,  LEVINSTEIN HYMAN J

IPC: G02F1/00 ,  G02F1/22

CPC classification number: G02F1/0036

Abstract: Ferric fluoride evidences a magneto-optic effect of device interest over a board frequency range including the major part of the visible spectrum. Modulators and isolators, either continuous or pulsed, may be operated over this entire frequency range at room temperature. Precautions to be taken to avoid flawing during growth of the material are described.

公开(公告)号：US3533755A

公开(公告)日：1970-10-13

申请号：US3533755D

申请日：1967-03-27

Applicant: BELL TELEPHONE LABOR INC

Inventor： BALLMAN ALBERT A ,  DENTON RICHARD T ,  LEVINSTEIN HYMAN J ,  SMITH RICHARD G

IPC: C01G35/00 ,  G02F1/35 ,  H01G7/02 ,  B01J1/18

CPC classification number: H01G7/025 ,  C01G35/00 ,  C01P2004/42 ,  C01P2006/40 ,  G02F1/3525 ,  Y10T29/42

公开(公告)号：US3423607A

公开(公告)日：1969-01-21

申请号：US3423607D

申请日：1966-06-29

Applicant: BELL TELEPHONE LABOR INC

Inventor： KUNZLER JOHN E ,  LEVINSTEIN HYMAN J ,  ROWELL JOHN M

IPC: H01L39/22 ,  H03K3/38

CPC classification number: H01L39/223 ,  H03K3/38 ,  Y10S505/865

公开(公告)号：US3346344A

公开(公告)日：1967-10-10

申请号：US51635765

申请日：1965-12-27

Applicant: BELL TELEPHONE LABOR INC

Inventor： LEVINSTEIN HYMAN J ,  KURT NASSAU

IPC: H01L41/18 ,  C01G33/00 ,  C04B35/495 ,  C30B15/00 ,  C30B15/18 ,  H01G7/02

CPC classification number: H01G7/026 ,  C01G33/00 ,  C01P2006/60 ,  C04B35/495 ,  C30B15/00 ,  C30B15/18 ,  C30B29/30 ,  H01G7/025 ,  Y10S117/902 ,  Y10T29/42

Abstract: 1,149,492. Lithium niobate. WESTERN ELECTRIC CO. Inc. 7 July, 1966 [12 July, 1965], No. 30535/66. Heading C1A. [Also in Division B1] A lithium niobate crystal is treated by passing an electrical current through at least a portion of it whilst this portion is maintained at a temperature of at least 1000‹ C. Alternatively, a lithium niobate crystal is grown by pulling from a melt and an electrical current is passed through the crystal and through the interface between the growing crystal and the melt. The current density is at least 0À1 ma/cm 2 . when treating the crystal alone and at least 0À5 ma/cm. 2 when using the melt. The treatment is said to influence the formation of magnetic domains in the crystal and a reversal of current during the treatment produces a second magnetic domain. The current may be reversed several times during the treatment to produce a series of domains.