公开(公告)号：US20150279500A1

公开(公告)日：2015-10-01

申请号：US14434229

申请日：2013-10-04

Applicant: CORNING INCORPORATED

Inventor： Robert Alan Bellman ,  Jeremy Curtis Clark ,  Paul Arthur Sachenik ,  Lynn Bernard Simpson ,  Lili Tian

IPC: H01B1/08 ,  H01L31/18 ,  C23C14/08 ,  C23C14/34 ,  H01L31/0224 ,  H01B5/14

CPC classification number: H01B1/08 ,  C23C14/086 ,  C23C14/3485 ,  H01B5/14 ,  H01L31/022483 ,  H01L31/1884 ,  Y02E10/50 ,  Y10T428/24355

Abstract: Disclosed are AZO films deposited on a transparent substrate by pulse DC using an oxide target with a composition in the range 0.5-2 wt % Al2O3, desirably at temperature above 325° C., resulting in films showing columnar grain structure with columns extending from the top to the bottom of the film, and small lateral grain size (less than 70 nm from substrate to top of film). The film has low resistivity at less than 10 Ohm/square at a thickness less than 400 nm, resistivity is desirably unchanged by annealing at temperatures of up to 450° C.

Abstract translation: 公开了通过脉冲直流使用组成为0.5-2重量％Al 2 O 3的氧化物靶，优选温度高于325℃的AZO膜，期望在高于325℃的温度下沉积在透明衬底上，导致膜显示柱状晶粒结构，其中柱从 薄膜的顶部至底部，并且具有小的横向晶粒尺寸（从底部到膜的顶部小于70nm）。 该薄膜的厚度小于400nm时的电阻率低于10欧姆/平方英寸，电阻率最好在不超过450℃的温度下进行退火。

公开(公告)号：US20180247726A1

公开(公告)日：2018-08-30

申请号：US15963437

申请日：2018-04-26

Applicant: Corning Incorporated

Inventor： Robert Alan Bellman ,  Jeremy Curtis Clark ,  Paul Arthur Sachenik ,  Lynn Bernard Simpson ,  Lili Tian

IPC: H01B1/08 ,  C23C14/08 ,  H01L31/18 ,  H01B5/14 ,  C23C14/34 ,  H01L31/0224

CPC classification number: H01B1/08 ,  C23C14/086 ,  C23C14/3485 ,  H01B5/14 ,  H01L31/022483 ,  H01L31/1884 ,  Y02E10/50 ,  Y10T428/24355

Abstract: Disclosed are AZO films deposited on a transparent substrate by pulse DC using an oxide target with a composition in the range 0.5-2 wt % Al2O3, desirably at temperature above 325° C., resulting in films showing columnar grain structure with columns extending from the top to the bottom of the film, and small lateral grain size (less than 70 nm from substrate to top of film). The film has low resistivity at less than 10 Ohm/square at a thickness less than 400 nm, resistivity is desirably unchanged by annealing at temperatures of up to 450° C.

公开(公告)号：US09984786B2

公开(公告)日：2018-05-29

申请号：US14434229

申请日：2013-10-04

Applicant: Corning Incorporated

Inventor： Robert Alan Bellman ,  Jeremy Curtis Clark ,  Paul Arthur Sachenik ,  Lynn Bernard Simpson ,  Lili Tian

IPC: H01B1/08 ,  C23C14/08 ,  C23C14/34 ,  H01L31/18 ,  H01B5/14 ,  H01L31/0224

CPC classification number: H01B1/08 ,  C23C14/086 ,  C23C14/3485 ,  H01B5/14 ,  H01L31/022483 ,  H01L31/1884 ,  Y02E10/50 ,  Y10T428/24355

Abstract: Disclosed are AZO films deposited on a transparent substrate by pulse DC using an oxide target with a composition in the range 0.5-2 wt % Al2O3, desirably at temperature above 325° C., resulting in films showing columnar grain structure with columns extending from the top to the bottom of the film, and small lateral grain size (less than 70 nm from substrate to top of film). The film has low resistivity at less than 10 Ohm/square at a thickness less than 400 nm, resistivity is desirably unchanged by annealing at temperatures of up to 450° C.