公开(公告)号：US20210028289A1

公开(公告)日：2021-01-28

申请号：US17041980

申请日：2019-03-27

Applicant: CSMC TECHNOLOGIES FAB2 CO., LTD.

Inventor： Dong FANG ,  Zheng BIAN

IPC: H01L29/423 ,  H01L29/786 ,  H01L29/40 ,  H01L21/285

Abstract: A method for manufacturing a trenched split-gate device, comprising: etching a semiconductor substrate to form a trench (120); depositing an oxide in the trench to form a floating-gate oxide layer in which the floating-gate oxide layer gradually thickens from top to bottom along a side wall of the trench, and a thickness of the floating gate oxide layer at a lower part of the side wall of the trench is the same as that of the floating gate oxide layer at a bottom of the trench; depositing polysilicon into the trench to form a floating-gate polysilicon layer (123); growing an insulation medium on an upper surface of the floating-gate polysilicon layer to form an isolation layer (124); and forming a control gate on the isolation layer in the trench.

公开(公告)号：US20240006492A1

公开(公告)日：2024-01-04

申请号：US18258180

申请日：2021-08-10

Applicant: CSMC TECHNOLOGIES FAB2 CO., LTD.

Inventor： Dong FANG ,  Kui XIAO

IPC: H01L29/10 ,  H01L29/417 ,  H01L29/78 ,  H01L21/265 ,  H01L29/66

CPC classification number: H01L29/1095 ,  H01L29/41741 ,  H01L29/7813 ,  H01L21/26513 ,  H01L29/66727 ,  H01L29/66734

Abstract: The present disclosure relates to a semiconductor device and a manufacturing method therefor. The semiconductor device includes: a base, where a first surface of the base is provided with a first trench and a second trench; a gate, provided in the first trench; a gate insulation isolation structure, provided in the first trench, wherein the gate insulation isolation structure covers the gate at a bottom, sides and a top of the gate; a source doped region, provided in the base, on both sides of the first trench and on both sides of the second trench; a trench conductive structure, provided in the second trench; a source electrode, provided on the trench conductive structure and the source doped region, and electrically connected to the trench conductive structure and the source doped region; and a drain electrode, provided on a second surface of the base. The semiconductor device in the present disclosure, in addition to be conducted through a channel, can also be conducted through the trench conductive structure; thus, conductivity thereof is stronger. Since the channel conducts faster, a turn-on voltage (forward voltage drop) thereof is lower.