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公开(公告)号：US20240006492A1
公开(公告)日：2024-01-04
申请号：US18258180
申请日：2021-08-10
IPC分类号： H01L29/10 , H01L29/417 , H01L29/78 , H01L21/265 , H01L29/66
CPC分类号： H01L29/1095 , H01L29/41741 , H01L29/7813 , H01L21/26513 , H01L29/66727 , H01L29/66734
摘要： The present disclosure relates to a semiconductor device and a manufacturing method therefor. The semiconductor device includes: a base, where a first surface of the base is provided with a first trench and a second trench; a gate, provided in the first trench; a gate insulation isolation structure, provided in the first trench, wherein the gate insulation isolation structure covers the gate at a bottom, sides and a top of the gate; a source doped region, provided in the base, on both sides of the first trench and on both sides of the second trench; a trench conductive structure, provided in the second trench; a source electrode, provided on the trench conductive structure and the source doped region, and electrically connected to the trench conductive structure and the source doped region; and a drain electrode, provided on a second surface of the base. The semiconductor device in the present disclosure, in addition to be conducted through a channel, can also be conducted through the trench conductive structure; thus, conductivity thereof is stronger. Since the channel conducts faster, a turn-on voltage (forward voltage drop) thereof is lower.
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公开(公告)号：US20220115532A1
公开(公告)日：2022-04-14
申请号：US17417677
申请日：2019-12-23
发明人： Weifeng SUN , Rongcheng LOU , Kui XIAO , Feng LIN , Jiaxing WEI , Sheng LI , Siyang LIU , Shengli LU , Longxing SHI
摘要： A power semiconductor device includes a substrate; drain metal; a drift region; a base region; a gate structure; a first conductive type doped region contacting the base region on the side of the base region distant from the gate structure; a source region provided in the base region and between the first conductive type doped region and the gate structure; contact metal that is provided on the first conductive type doped region and forms a contact barrier having rectifying characteristics together with the first conductive type doped region below; and source metal wrapping the contact metal and contacting the source region.
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公开(公告)号：US20230019004A1
公开(公告)日：2023-01-19
申请号：US17762206
申请日：2020-09-25
发明人： Jiaxing WEI , Qichao WANG , Kui XIAO , Dejin WANG , Li LU , Ling YANG , Ran YE , Siyang LIU , Weifeng SUN , Longxing SHI
IPC分类号： H01L29/78
摘要： A lateral double-diffused metal oxide semiconductor field effect transistor (LDMOS), including: a trench gate including a lower part inside a trench and an upper part outside the trench, a length of the lower part in a width direction of a conducting channel being less than that of the upper part, and the lower part extending into a body region and having a depth less than that of the body region; an insulation structure arranged between a drain region and the trench gate and extending downwards into a drift region, a depth of the insulation structure being less than that of the drift region.
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公开(公告)号：US20220069115A1
公开(公告)日：2022-03-03
申请号：US17417663
申请日：2019-12-19
发明人： Siyang LIU , Chi ZHANG , Kui XIAO , Guipeng SUN , Dejin WANG , Jiaxing WEI , Li LU , Weifeng SUN , Shengli LU
IPC分类号： H01L29/778 , H01L29/20 , H01L29/205 , H01L29/207
摘要： A heterojunction semiconductor device with a low on-resistance includes a metal drain electrode, a substrate, and a buffer layer. A current blocking layer arranged in the buffer layer, a gate structure is arranged on the buffer layer, and the gate structure comprises a metal gate electrode, GaN pillars and AlGaN layers, wherein a metal source electrode is arranged above the metal gate electrode; and the current blocking layer comprises multiple levels of current blocking layers, the centers of symmetry of the layers are collinear, and annular inner openings of the current blocking layers at all levels gradually become smaller from top to bottom. The AlGaN layers and the GaN pillars are distributed in a honeycomb above the buffer layer.
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5.发明公开公开(公告)号：US20240322061A1
公开(公告)日：2024-09-26
申请号：US18578226
申请日：2022-12-13
发明人： Zheng BIAN , Kui XIAO , Aifeng ZHAO , Jinjie HU , Tao YANG
IPC分类号： H01L31/107 , H01L27/144 , H01L31/0216 , H01L31/18
CPC分类号： H01L31/107 , H01L27/1443 , H01L28/20 , H01L31/02164 , H01L31/1804
摘要： The present disclosure relates to a single-photon avalanche diode integrated with a quenching resistor and a manufacturing method thereof. The method includes: obtaining a wafer; patterning and etching a front surface of the base to form a quenching resistor trench and an isolation trench, wherein a width of the isolation trench is greater than a width of the quenching resistor trench; forming an insulation layer on an inner surface of the quenching resistor trench; depositing polycrystalline silicon on the front surface of the base, where the polycrystalline silicon is filled into the quenching resistor trench and seals the quenching resistor trench while the polycrystalline silicon is filled into the isolation trench and does not seal the isolation trench; performing oxidation treatment on the polycrystalline silicon in the isolation trench; filling a light-shielding conductive material into the isolation trench.
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公开(公告)号：US20190057960A1
公开(公告)日：2019-02-21
申请号：US15770624
申请日：2016-08-19
发明人： Kui XIAO
IPC分类号： H01L27/02 , H01L29/866 , H01L29/78 , H01L29/06
CPC分类号： H01L27/0255 , H01L29/0696 , H01L29/16 , H01L29/7813 , H01L29/861 , H01L29/866
摘要： Disclosed is a semiconductor device having an e1ectrostatic discharge protection structure. The e1ectrostatic discharge protection structure is a diode connected between a gate e1ectrode and a source e1ectrode of the semiconductor device. The diode comprises a diode body and two connection portions connected to two ends of the diode body and respectively used for electrically connecting to the gate e1ectrode and the source e1ectrode. Lower parts of the two connection portions are respective1y provided with a trench. An insulation 1ayer is provided on an inner surface of the trench and the surface of a substrate between trenches. The diode body is provided on the insu1ation 1ayer on the surface of the substrate. The connection portions respectively extend downwards into respective trenches from one end of the diode body. A dielectric layer is provided on the diode, and a meta1 conductor 1ayer is provided on the dielectric layer.
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