公开(公告)号：US20240339522A1

公开(公告)日：2024-10-10

申请号：US18292067

申请日：2022-12-01

Applicant: CSMC TECHNOLOGIES FAB2 CO., LTD.

Inventor： Chaoqi XU ,  Shuxian CHEN ,  Chunxia MA ,  Yi ZHANG ,  Penglong XU ,  Feng LIN ,  Ruibin CAO

IPC: H01L29/66 ,  H01L29/40 ,  H01L29/78

CPC classification number: H01L29/66681 ,  H01L29/402 ,  H01L29/7816

Abstract: In a manufacturing method for an LDMOS integrated device, a provided semiconductor substrate has an NLDMOS area and a PLDMOS area; then a dielectric layer on the NLDMOS area and a dielectric layer on the PLDMOS area are formed on the semiconductor substrate, and a stress material layer is formed on the dielectric layer on the NLDMOS area and/or on the dielectric layer on the PLDMOS area, the thickness of the dielectric layer on the NLDMOS region being greater than the thickness of the dielectric layer on the PLDMOS region; then heat treatment is performed to adjust the stress of the stress material layer, so as to improve the electron mobility of a device; then the stress material layer is removed.

公开(公告)号：US20240047212A1

公开(公告)日：2024-02-08

申请号：US18258902

申请日：2021-07-27

Applicant: CSMC TECHNOLOGIES FAB2 CO., LTD.

Inventor： Hongfeng JIN ,  Ruibin CAO ,  Feng LIN ,  Xiang QIN ,  Yu HUANG ,  Chunxu LI

IPC: H01L21/265 ,  H01L29/66 ,  H01L29/78 ,  H01L21/027 ,  H01L21/266

CPC classification number: H01L21/2652 ,  H01L29/66681 ,  H01L29/7816 ,  H01L21/0274 ,  H01L21/266

Abstract: A semiconductor device and a manufacturing method therefor are disclosed. The method includes: providing a substrate of a first conductivity type; forming doped regions of a second conductivity type in the substrate, the doped regions including adjacent first and second drift regions, wherein the second conductivity type is opposite to the first conductivity type; forming a polysilicon film on the substrate, the polysilicon film covering the doped regions; forming patterned photoresist on the polysilicon film, which covers the first and second drift regions, and in which the polysilicon film above a reserved region for a body region between the first and second drift regions is exposed; and forming the body region of the first conductivity type in the reserved region by performing a high-energy ion implantation process, the body region having a top surface that is flush with top surfaces of the doped regions, the body region having a bottom surface that is not higher than bottom surfaces of the doped regions. The problem of morphological changes possibly experienced by the photoresist due to a high temperature in an etching process, which may lead to an impaired effect of the high-energy ion implantation process, can be circumvented.