OXIDIZER FREE SLURRY FOR RUTHENIUM CMP
    1.
    发明申请

    公开(公告)号:US20200181454A1

    公开(公告)日:2020-06-11

    申请号:US16706991

    申请日:2019-12-09

    Abstract: The invention provides a chemical-mechanical polishing composition comprising(a) an abrasive having a Vickers hardness of 16 GPa or more, and (b) a liquid carrier, wherein the polishing composition is substantially free of an oxidizing agent and wherein the polishing composition has a pH of about 0 to about 7. The invention further provides a method of polishing a substrate, especially a substrate comprising ruthenium, with the polishing composition.

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