公开(公告)号：US20140264151A1

公开(公告)日：2014-09-18

申请号：US14208059

申请日：2014-03-13

Applicant: Cabot Microelectronics Corporation

Inventor： Cheng-Yuan KO

IPC: C09K13/00

CPC classification number: C11D7/3281 ,  C11D3/0073 ,  C11D3/2086 ,  C11D3/26 ,  C11D3/28 ,  C11D3/30 ,  C11D3/33 ,  C11D3/361 ,  C11D3/364 ,  C11D3/365 ,  C11D7/265 ,  C11D7/32 ,  C11D7/3209 ,  C11D7/3245 ,  C11D7/36 ,  C11D11/0047 ,  C23G1/18 ,  C23G1/20 ,  H01L21/02074

Abstract: An aqueous cleaning composition for post copper chemical mechanical planarization is provided. The composition comprises an organic base, a copper etchant, an organic ligand, a corrosion inhibitor, and water, wherein the organic base is in a concentration of at least about 200 ppm, the copper etchant is in a concentration of at least about 200 ppm, the organic ligand is in a concentration of at least about 50 ppm, and the corrosion inhibitor is in a concentration of at least about 10 ppm. When used in the post copper chemical mechanical planarization cleaning procedure, the aqueous cleaning composition can effectively remove the residual contaminants from the wafer surface and reduce the defect counts on the wafer surface, while simultaneously, impart the wafers with a better surface roughness.

Abstract translation: 提供了用于后铜化学机械平面化的水性清洁组合物。 组合物包含有机碱，铜蚀刻剂，有机配体，腐蚀抑制剂和水，其中有机碱的浓度至少为约200ppm，铜蚀刻剂的浓度至少为约200ppm 有机配体的浓度至少约为50ppm，而腐蚀抑制剂的浓度至少约为10ppm。 当用于后期铜化学机械平面化清洁程序时，水性清洁组合物可以有效地从晶片表面去除残留的污染物并减少晶片表面上的缺陷计数，同时赋予晶片更好的表面粗糙度。

公开(公告)号：US20200181454A1

公开(公告)日：2020-06-11

申请号：US16706991

申请日：2019-12-09

Applicant: Cabot Microelectronics Corporation

Inventor： Cheng-Yuan KO ,  Hung-Tsung HUANG ,  Tyler J. CARTER

IPC: C09G1/02 ,  H01L21/321

Abstract: The invention provides a chemical-mechanical polishing composition comprising(a) an abrasive having a Vickers hardness of 16 GPa or more, and (b) a liquid carrier, wherein the polishing composition is substantially free of an oxidizing agent and wherein the polishing composition has a pH of about 0 to about 7. The invention further provides a method of polishing a substrate, especially a substrate comprising ruthenium, with the polishing composition.

公开(公告)号：US20200308451A1

公开(公告)日：2020-10-01

申请号：US16826409

申请日：2020-03-23

Applicant: Cabot Microelectronics Corporation

Inventor： Yang-Yao LEE ,  Hsin-Yen WU ,  Cheng-Yuan KO ,  Lung-Tai LU ,  Hung-Tsung HUANG

IPC: C09G1/02 ,  B24B1/04

Abstract: The invention provides a chemical-mechanical polishing composition comprising (a) about 0.05 wt. % to about 10 wt. % of an abrasive; (b) a dispersant, wherein the dispersant is a linear or branched C2-C10 alkylenediol; and (c) water, wherein the chemical-mechanical polishing composition has a pH of about 2 to about 6. The invention also provides a method of chemically-mechanically polishing a substrate by contacting the substrate with the inventive chemical-mechanical polishing composition.

公开(公告)号：US20190241783A1

公开(公告)日：2019-08-08

申请号：US16389097

申请日：2019-04-19

Applicant: Cabot Microelectronics Corporation

Inventor： Roman IVANOV ,  Fernando HUNG LOW ,  Cheng-Yuan KO ,  Glenn WHITENER

IPC: C09K3/14 ,  H01L21/3105 ,  C09G1/02

CPC classification number: C09K3/1409 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/31053

Abstract: The invention provides a chemical-mechanical polishing composition comprising (a) silica particles, (b) a polymer comprising sulfonic acid monomeric units, (c) optionally, a buffering agent, and (d) water, wherein the polishing composition has a pH of about 2 to about 5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate comprises silicon carbide and silicon nitride.

公开(公告)号：US20170158993A1

公开(公告)日：2017-06-08

申请号：US15327336

申请日：2015-07-17

Applicant: Cabot Microelectronics Corporation

Inventor： Roman IVANOV ,  Cheng-Yuan KO ,  Fred SUN

IPC: C11D11/00 ,  C11D7/32 ,  H01L21/02

CPC classification number: C11D11/0047 ,  C11D7/3209 ,  C11D7/3218 ,  C11D7/3272 ,  H01L21/02074

Abstract: The invention provides stabilized solutions useful as raw materials in various applications and methods for stabilizing such aqueous solutions with a stabilizer comprising one or more dialkylhydroxylamines or inorganic or organic acid salts thereof. Stabilized solutions and methods for stabilizing aqueous solutions thereof, include, for example, those of tris(2-hydroxy ethyl)methylammonium hydroxide (THEMAH) and/or carbohydrazide (CHZ).

公开(公告)号：US20180190506A1

公开(公告)日：2018-07-05

申请号：US15398933

申请日：2017-01-05

Applicant: Cabot Microelectronics Corporation

Inventor： Roman IVANOV ,  Fernando HUNG LOW ,  Cheng-Yuan KO ,  Glenn WHITENER

IPC: H01L21/321 ,  C09G1/02 ,  C09K3/14 ,  H01L21/306

CPC classification number: C09K3/1409 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/31053

Abstract: The invention provides a chemical-mechanical polishing composition comprising (a) silica particles, (b) a polymer comprising sulfonic acid monomeric units, (c) optionally, a buffering agent, and (d) water, wherein the polishing composition has a pH of about 2 to about 5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate comprises silicon carbide and silicon nitride.