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公开(公告)号：US20180053897A1
公开(公告)日：2018-02-22
申请号：US15557883
申请日：2016-03-01
Inventor： Christopher Newsome , Shuji Doi
CPC classification number: H01L51/0039 , H01L51/0003 , H01L51/0036 , H01L51/0043 , H01L51/0074 , H01L51/0558
Abstract: Provided is a polymer blend for a semiconducting layer of an organic electronic device, comprising: a first polymer; a second polymer which is different from the first polymer; and a semiconductor compound selected from the group of pentacene derivatives and thiophene derivatives. The semiconductor compound is distributed homogeneously in the semiconducting layer in the direction parallel to the surface of the electrodes. This improved lateral distribution of the semiconductor compound in the semiconducting layer provides a reduced contact resistance, particularly for short channel length devices.
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公开(公告)号：US20160233438A1
公开(公告)日：2016-08-11
申请号：US15014779
申请日：2016-02-03
Applicant: Cambridge Display Technology Limited
Inventor： Christopher Newsome , Daniel Tobjork
IPC: H01L51/00
CPC classification number: H01L51/0074 , H01B1/12 , H01L51/0005 , H01L51/0007 , H01L51/0039 , H01L51/0566
Abstract: Provided is a solution comprising a polymer and an organic semiconductor compound, wherein the semiconductor compound is a thiophene derivative, and wherein the solvent is a mixture comprising a) at least one of 4-methyl anisole, indane and an alkylbenzene with a linear or branched alkyl group containing from 4 to 7 carbon atoms; and b) at least one of tetrahydronaphthalin and 1,2,4-trimethylbenzene.
Abstract translation: 提供了包含聚合物和有机半导体化合物的溶液，其中半导体化合物是噻吩衍生物，并且其中溶剂是包含a）至少一种4-甲基苯甲醚，二氢化茚和具有直链或支链的烷基苯的混合物 含有4至7个碳原子的烷基; 和b）四氢化萘酞和1,2,4-三甲基苯中的至少一种。
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公开(公告)号：US20140353647A1
公开(公告)日：2014-12-04
申请号：US14356132
申请日：2012-10-29
Applicant: CAMBRIDGE DISPLAY TECHNOLOGY LIMITED
Inventor： Christopher Newsome , Julian Carter
CPC classification number: H01L51/0558 , B82Y10/00 , H01L51/0003 , H01L51/0021 , H01L51/0026 , H01L51/0035 , H01L51/0039 , H01L51/0047 , H01L51/0052 , H01L51/0059 , H01L51/0512 , H01L51/0562 , H01L51/105 , H01L51/5056 , H01L51/5088
Abstract: An organic thin film transistor comprises source and drain electrodes defining a channel between them; a surface-modification layer on at least part of the surface of each of the source and drain electrodes; an organic semiconductor layer extending across the channel and in contact with the surface-modification layers; a gate electrode; and a gate dielectric between the organic semiconductor layer and the gate dielectric. The surface-modification layers consist essentially of a partially fluorinated fullerene.
Abstract translation: 有机薄膜晶体管包括在它们之间限定通道的源极和漏极; 在每个源极和漏极的表面的至少一部分上的表面改性层; 延伸穿过通道并与表面改性层接触的有机半导体层; 栅电极; 以及在有机半导体层和栅极电介质之间的栅极电介质。 表面改性层基本上由部分氟化的富勒烯组成。
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公开(公告)号：US20160149147A1
公开(公告)日：2016-05-26
申请号：US14905091
申请日：2014-07-11
Applicant: CAMBRIDGE DISPLAY TECHNOLOGY LIMITED
Inventor： Christopher Newsome
CPC classification number: H01L51/105 , H01L51/0003 , H01L51/0039 , H01L51/0074 , H01L51/0084 , H01L51/0541 , H01L51/0545
Abstract: There is disclosed a method for preparing a modified electrode for an organic electronic device, wherein said modified electrode comprises a surface modification layer, comprising: (i) depositing a solution comprising M(tfd)3, wherein M is Mo, Cr or W, and at least one solvent onto at least a part of at least one surface of said electrode; and (ii) removing at least some of said solvent to form said surface modification layer on said electrode.
Abstract translation: 公开了一种制备有机电子器件用改性电极的方法，其中所述改性电极包括表面改性层，其包括：（i）沉积包含M（tfd）3的溶液，其中M是Mo，Cr或W， 和至少一种溶剂在所述电极的至少一个表面的至少一部分上; 和（ii）除去至少一些所述溶剂以在所述电极上形成所述表面改性层。
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公开(公告)号：US10559753B2
公开(公告)日：2020-02-11
申请号：US15508619
申请日：2015-08-27
Applicant: Cambridge Display Technology Limited
Inventor： Jeremy Burroughes , Christopher Newsome , Daniel Tobjörk , Mark Dowling
Abstract: We describe a method for reducing a parasitic resistance at an interface between a conducting electrode region and an organic semiconductor in a thin film transistor, the method comprising: providing a solution comprising a dopant for doping said semiconductor, and depositing said solution onto said semiconductor and/or said conducting electrode region to selectively dope said semiconductor adjacent said interface between said conducting electrode region and said semiconductor, wherein depositing said solution comprises inkjet-printing said solution.
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Patent Agency Ranking
公开(公告)号：US09905783B2
公开(公告)日：2018-02-27
申请号：US15014779
申请日：2016-02-03
Applicant: Cambridge Display Technology Limited
Inventor： Christopher Newsome , Daniel Tobjork
CPC classification number: H01L51/0074 , H01B1/12 , H01L51/0005 , H01L51/0007 , H01L51/0039 , H01L51/0566
Abstract: Provided is a solution comprising a polymer and an organic semiconductor compound, wherein the semiconductor compound is a thiophene derivative, and wherein the solvent is a mixture comprising a) at least one of 4-methyl anisole, indane and an alkylbenzene with a linear or branched alkyl group containing from 4 to 7 carbon atoms; and b) at least one of tetrahydronaphthalin and 1,2,4-trimethylbenzene.
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公开(公告)号：US20170279046A1
公开(公告)日：2017-09-28
申请号：US15508619
申请日：2015-08-27
Applicant: Cambridge Display Technology Limited
Inventor： Jeremy Burroughes , Christopher Newsome , Daniel Tobjörk , Mark Dowling
CPC classification number: H01L51/002 , H01L27/283 , H01L51/0005 , H01L51/0077 , H01L51/0508 , H01L51/0541 , H01L51/105
Abstract: We describe a method for reducing a parasitic resistance at an interface between a conducting electrode region and an organic semiconductor in a thin film transistor, the method comprising: providing a solution comprising a dopant for doping said semiconductor, and depositing said solution onto said semiconductor and/or said conducting electrode region to selectively dope said semiconductor adjacent said interface between said conducting electrode region and said semiconductor, wherein depositing said solution comprises inkjet-printing said solution.
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公开(公告)号：US20150188053A1
公开(公告)日：2015-07-02
申请号：US14409804
申请日：2013-06-17
Applicant: Cambridge Display Technology Limited
Inventor： Christopher Newsome
IPC: H01L51/00
CPC classification number: H01L51/0039 , H01L21/02118 , H01L51/0007 , H01L51/0026 , H01L51/0035 , H01L51/0043 , H01L51/0074 , H01L51/0512 , H01L51/0566
Abstract: A method for preparing a semiconducting layer of an organic electronic device comprising: (i) depositing said semiconducting layer from a solution comprising a polymeric semiconductor, a non-polymeric semiconductor, a first aromatic solvent and a second aromatic solvent, wherein said second aromatic solvent has a boiling point that is at least 15° C. higher than the boiling point of said first aromatic solvent; and (ii) heating said deposited layer to evaporate said solvent, wherein said first aromatic solvent is of formula (I): wherein R1 is selected from C1-6 alkyl and OC1-6 alkyl; and R2 and R3 are each independently selected from H and CC1-6 alkyl.
Abstract translation: 一种制备有机电子器件的半导体层的方法，包括：（i）从包含聚合半导体，非聚合半导体，第一芳族溶剂和第二芳族溶剂的溶液沉积所述半导体层，其中所述第二芳族溶剂 具有比所述第一芳族溶剂的沸点高至少15℃的沸点; 和（ii）加热所述沉积层以蒸发所述溶剂，其中所述第一芳族溶剂具有式（I）：其中R 1选自C 1-6烷基和OC 1-6烷基; 并且R 2和R 3各自独立地选自H和C 1-6烷基。
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公开(公告)号：US10249822B2
公开(公告)日：2019-04-02
申请号：US15557883
申请日：2016-03-01
Inventor： Christopher Newsome , Shuji Doi
Abstract: Provided is a polymer blend for a semiconducting layer of an organic electronic device, comprising: a first polymer; a second polymer which is different from the first polymer; and a semiconductor compound selected from the group of pentacene derivatives and thiophene derivatives. The semiconductor compound is distributed homogeneously in the semiconducting layer in the direction parallel to the surface of the electrodes. This improved lateral distribution of the semiconductor compound in the semiconducting layer provides a reduced contact resistance, particularly for short channel length devices.
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公开(公告)号：US09793504B2
公开(公告)日：2017-10-17
申请号：US14905091
申请日：2014-07-11
Applicant: Cambridge Display Technology Limited
Inventor： Christopher Newsome
CPC classification number: H01L51/105 , H01L51/0003 , H01L51/0039 , H01L51/0074 , H01L51/0084 , H01L51/0541 , H01L51/0545
Abstract: There is disclosed a method for preparing a modified electrode for an organic electronic device, wherein said modified electrode comprises a surface modification layer, comprising: (i) depositing a solution comprising M(tfd)3, wherein M is Mo, Cr or W, and at least one solvent onto at least a part of at least one surface of said electrode; and (ii) removing at least some of said solvent to form said surface modification layer on said electrode.
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