公开(公告)号：US10559753B2

公开(公告)日：2020-02-11

申请号：US15508619

申请日：2015-08-27

Applicant: Cambridge Display Technology Limited

Inventor： Jeremy Burroughes ,  Christopher Newsome ,  Daniel Tobjörk ,  Mark Dowling

IPC: H01L51/00 ,  H01L51/10 ,  H01L51/05 ,  H01L27/28

Abstract: We describe a method for reducing a parasitic resistance at an interface between a conducting electrode region and an organic semiconductor in a thin film transistor, the method comprising: providing a solution comprising a dopant for doping said semiconductor, and depositing said solution onto said semiconductor and/or said conducting electrode region to selectively dope said semiconductor adjacent said interface between said conducting electrode region and said semiconductor, wherein depositing said solution comprises inkjet-printing said solution.

公开(公告)号：US20170279046A1

公开(公告)日：2017-09-28

申请号：US15508619

申请日：2015-08-27

Applicant: Cambridge Display Technology Limited

Inventor： Jeremy Burroughes ,  Christopher Newsome ,  Daniel Tobjörk ,  Mark Dowling

IPC: H01L51/00 ,  H01L51/10 ,  H01L27/28 ,  H01L51/05

CPC classification number: H01L51/002 ,  H01L27/283 ,  H01L51/0005 ,  H01L51/0077 ,  H01L51/0508 ,  H01L51/0541 ,  H01L51/105

Abstract: We describe a method for reducing a parasitic resistance at an interface between a conducting electrode region and an organic semiconductor in a thin film transistor, the method comprising: providing a solution comprising a dopant for doping said semiconductor, and depositing said solution onto said semiconductor and/or said conducting electrode region to selectively dope said semiconductor adjacent said interface between said conducting electrode region and said semiconductor, wherein depositing said solution comprises inkjet-printing said solution.