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公开(公告)号:US20240402591A1
公开(公告)日:2024-12-05
申请号:US18731149
申请日:2024-05-31
Applicant: Carl Zeiss SMS Ltd.
Inventor: Vladimir Dmitriev , Sergey Oshemkov , Alexander Gusarov , Avi Cohen
Abstract: The present disclosure relates to a method for correcting a reflective lithography mask, wherein the mask comprises a substrate and a reflective multilayer stack, the method comprising: applying a first electromagnetic radiation to the mask to evoke a first material change within the mask which modifies a reflectivity of the mask. The present disclosure further relates to an apparatus for correcting a reflective lithography mask and a reflective lithography mask.