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公开(公告)号：US11914289B2
公开(公告)日：2024-02-27
申请号：US17140340
申请日：2021-01-04
Applicant: Carl Zeiss SMS Ltd.
Inventor： Joachim Welte , Uri Stern , Kujan Gorhad , Vladimir Dmitriev
CPC classification number: G03F1/84 , G01N2201/06113 , G01N2201/062 , G03F1/80
Abstract: The present invention refers to a method for determining an effect of one or more of pixels to be introduced into a substrate of a photolithographic mask, the photolithographic mask having one or more pattern elements, wherein the one or more pixels serve to at least partly correct one or more errors of the photolithographic mask, the method comprising: determining the effect of the one or more introduced pixels by determining a change in birefringence of the substrate of the photolithographic mask having the one or more pattern elements.
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2.发明授权公开(公告)号：US10061192B2
公开(公告)日：2018-08-28
申请号：US15229234
申请日：2016-08-05
Applicant: Carl Zeiss SMT GmbH , Carl Zeiss SMS Ltd.
Inventor： Dirk Beyer , Vladimir Dmitriev , Ofir Sharoni , Nadav Wertsman
CPC classification number: G03F1/72 , G03F1/84 , G03F7/7035 , G03F7/70466 , G03F7/70625 , G03F7/70633
Abstract: The invention relates to a method for correcting at least one error on wafers processed by at least one photolithographic mask, the method comprises: (a) measuring the at least one error on a wafer at a wafer processing site, and (b) modifying the at least one photolithographic mask by introducing at least one arrangement of local persistent modifications in the at least one photolithographic mask.
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3.发明申请公开(公告)号：US20210263406A1
公开(公告)日：2021-08-26
申请号：US16798696
申请日：2020-02-24
Applicant: Carl Zeiss SMT GmbH , Carl Zeiss SMS Ltd.
Inventor： Vladimir Dmitriev , Joachim Welte , Bernd Geh , Paul Graeupner , Anja Schauer
Abstract: The present invention refers to a method for performing an aerial image simulation of a photolithographic mask which comprises the following steps: (a) modifying an optical radiation distribution at a patterned surface of the photolithographic mask, depending on at least one first arrangement of pixels to be generated in the photolithographic mask; and (b) performing the aerial image simulation of the photolithographic mask by using the generated modified optical radiation distribution.
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公开(公告)号：US10114294B2
公开(公告)日：2018-10-30
申请号：US15453337
申请日：2017-03-08
Applicant: Carl Zeiss SMS Ltd.
Inventor： Vladimir Dmitriev
IPC: G03B27/32 , G03B27/54 , G03B27/72 , G03F1/00 , G03F7/20 , G03F1/38 , G03F1/70 , G03F1/60 , G03F1/72 , G03F1/50
Abstract: Method, apparatus for imparting direction-selective light attenuation. A method for imparting direction-selective light attenuation to a photomask may include assigning different attenuation levels to light rays of different directions of incidence. The method may also include computing an array of shading elements to attenuate the light rays with the assigned different attenuation levels, depending on the direction of incidence of the light rays. The method may further include inscribing the array of shading elements within a substrate of the photomask.
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5.发明申请METHOD AND APPARATUS FOR CORRECTING ERRORS ON A WAFER PROCESSED BY A PHOTOLITHOGRAPHIC MASK 审中-公开用于校正由光刻胶掩模处理的波形上的误差的方法和装置公开(公告)号：US20160342080A1
公开(公告)日：2016-11-24
申请号：US15229234
申请日：2016-08-05
Applicant: Carl Zeiss SMT GmbH , Carl Zeiss SMS Ltd.
Inventor： Dirk Beyer , Vladimir Dmitriev , Ofir Sharoni , Nadav Wertsman
CPC classification number: G03F1/72 , G03F1/84 , G03F7/7035 , G03F7/70466 , G03F7/70625 , G03F7/70633
Abstract: The invention relates to a method for correcting at least one error on wafers processed by at least one photolithographic mask, the method comprises: (a) measuring the at least one error on a wafer at a wafer processing site, and (b) modifying the at least one photolithographic mask by introducing at least one arrangement of local persistent modifications in the at least one photolithographic mask.
Abstract translation: 本发明涉及一种用于校正由至少一个光刻掩模处理的晶片上的至少一个误差的方法，所述方法包括：（a）在晶片加工位置测量晶片上的至少一个误差，以及（b）修改 至少一个光刻掩模，通过在所述至少一个光刻掩模中引入局部持续修饰的至少一种布置。
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Patent Agency Ranking
6.发明申请METHOD AND APPARATUS FOR COMPENSATING AT LEAST ONE DEFECT OF AN OPTICAL SYSTEM 有权用于补偿光学系统的至少一个缺陷的方法和装置公开(公告)号：US20140347646A1
公开(公告)日：2014-11-27
申请号：US14457712
申请日：2014-08-12
Applicant: Carl Zeiss SMS Ltd. , Carl Zeiss SMT GmbH
Inventor： Vladimir Dmitriev , Ingo Saenger , Frank Schlesener , Markus Mengel , Johannes Ruoff
CPC classification number: G03F7/70591 , G01M11/0242 , G02B5/3091 , G02B27/0043 , G03F7/70191 , G03F7/70308 , G03F7/70566
Abstract: The invention relates to a method for compensating at least one defect of an optical system which comprises introducing an arrangement of local persistent modifications in at least one optical element of the optical system, which does not have pattern elements on one of its optical surfaces, so that the at least one defect is at least partially compensated.
Abstract translation: 本发明涉及一种用于补偿光学系统的至少一个缺陷的方法，其包括在光学系统的至少一个光学元件中引入局部持续修改的布置，该光学系统在其光学表面之一上不具有图形元素，因此 所述至少一个缺陷至少部分地被补偿。
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公开(公告)号：US20240402591A1
公开(公告)日：2024-12-05
申请号：US18731149
申请日：2024-05-31
Applicant: Carl Zeiss SMS Ltd.
Inventor： Vladimir Dmitriev , Sergey Oshemkov , Alexander Gusarov , Avi Cohen
Abstract: The present disclosure relates to a method for correcting a reflective lithography mask, wherein the mask comprises a substrate and a reflective multilayer stack, the method comprising: applying a first electromagnetic radiation to the mask to evoke a first material change within the mask which modifies a reflectivity of the mask. The present disclosure further relates to an apparatus for correcting a reflective lithography mask and a reflective lithography mask.
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公开(公告)号：US11366383B2
公开(公告)日：2022-06-21
申请号：US16589515
申请日：2019-10-01
Applicant: Carl Zeiss SMS Ltd.
Inventor： Vladimir Dmitriev , Kujan Gorhad , Joachim Welte , Tanya Serzhanyuk
Abstract: The present invention refers to a method and an apparatus for determining positions of a plurality of pixels to be introduced into a substrate of a photolithographic mask by use of a laser system, wherein the pixels serve to at least partly correct one or more errors of the photolithographic mask. The method comprises the steps: (a) obtaining error data associated with the one or more errors; (b) obtaining first parameters of an illumination system, the first parameters determining an illumination of the photolithographic mask of the illumination system when processing a wafer by illuminating with the illumination system using the photolithographic mask; and (c) determining the positions of the plurality of pixels based on the error data and the first parameters.
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公开(公告)号：US20210124259A1
公开(公告)日：2021-04-29
申请号：US17140340
申请日：2021-01-04
Applicant: Carl Zeiss SMS Ltd.
Inventor： Joachim Welte , Uri Stern , Kujan Gorhad , Vladimir Dmitriev
Abstract: The present invention refers to a method for determining an effect of one or more of pixels to be introduced into a substrate of a photolithographic mask, the photolithographic mask having one or more pattern elements, wherein the one or more pixels serve to at least partly correct one or more errors of the photolithographic mask, the method comprising: determining the effect of the one or more introduced pixels by determining a change in birefringence of the substrate of the photolithographic mask having the one or more pattern elements.
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10.发明授权公开(公告)号：US10578975B2
公开(公告)日：2020-03-03
申请号：US16152784
申请日：2018-10-05
Applicant: Carl Zeiss SMT GmbH , Carl Zeiss SMS Ltd.
Inventor： Thomas Thaler , Joachim Welte , Kujan Gorhad , Vladimir Dmitriev , Ute Buttgereit , Thomas Scheruebl , Yuval Perets
IPC: G03F7/20
Abstract: The invention relates to a method for correcting the critical dimension uniformity of a photomask for semiconductor lithography, comprising the following steps: determining a transfer coefficient as a calibration parameter, correcting the photomask by writing pixel fields, verifying the photomask corrected thus, wherein a transfer coefficient is used for verifying the corrected photomask, said transfer coefficient being obtained from a measured scattering function of pixel fields.
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