公开(公告)号：US20240280892A1

公开(公告)日：2024-08-22

申请号：US18443486

申请日：2024-02-16

Applicant: Carl Zeiss SMS Ltd.

Inventor： Vladimir Dmitriev ,  Avi Cohen ,  Kujan Gorhad ,  Hani Zeidan

IPC: G03F1/36 ,  G03F1/72 ,  G03F7/00

CPC classification number: G03F1/36 ,  G03F1/72 ,  G03F7/70508

Abstract: The present invention relates to a method for correcting placement errors in a photolithographic mask comprising a substrate and structures formed on the substrate, the method involving at least one local density change, preferably a plurality of local density changes, each of which defines a pixel, being introduced into the substrate by use of a laser beam in order to correct placement errors of the structures, wherein in an examination step, an incidence surface of the mask, via which the laser beam radiates into the substrate, is examined for contaminations and, in regions in which a contamination of the incidence surface has been ascertained in the examination step, no laser irradiation or a laser irradiation with at least one changed laser beam parameter takes place, the laser beam parameter(s) being changed such that no damage to the incidence surface or near-surface regions occurs in the case of an interaction between laser beam and contamination.

公开(公告)号：US20240402591A1

公开(公告)日：2024-12-05

申请号：US18731149

申请日：2024-05-31

Applicant: Carl Zeiss SMS Ltd.

Inventor： Vladimir Dmitriev ,  Sergey Oshemkov ,  Alexander Gusarov ,  Avi Cohen

IPC: G03F1/74 ,  G03F1/24

Abstract: The present disclosure relates to a method for correcting a reflective lithography mask, wherein the mask comprises a substrate and a reflective multilayer stack, the method comprising: applying a first electromagnetic radiation to the mask to evoke a first material change within the mask which modifies a reflectivity of the mask. The present disclosure further relates to an apparatus for correcting a reflective lithography mask and a reflective lithography mask.