公开(公告)号：US20240402591A1

公开(公告)日：2024-12-05

申请号：US18731149

申请日：2024-05-31

Applicant: Carl Zeiss SMS Ltd.

Inventor： Vladimir Dmitriev ,  Sergey Oshemkov ,  Alexander Gusarov ,  Avi Cohen

IPC: G03F1/74 ,  G03F1/24

Abstract: The present disclosure relates to a method for correcting a reflective lithography mask, wherein the mask comprises a substrate and a reflective multilayer stack, the method comprising: applying a first electromagnetic radiation to the mask to evoke a first material change within the mask which modifies a reflectivity of the mask. The present disclosure further relates to an apparatus for correcting a reflective lithography mask and a reflective lithography mask.

公开(公告)号：US20230053667A1

公开(公告)日：2023-02-23

申请号：US17882948

申请日：2022-08-08

Applicant: Carl Zeiss SMT GmbH ,  Carl Zeiss SMS Ltd.

Inventor： Sergey Oshemkov ,  Shao-Chi Wei ,  Joerg Frederik Blumrich ,  Martin Voelcker ,  Thomas Franz Karl Scheruebl

IPC: G03F7/20

Abstract: The invention relates to a method for removing particles from a mask system for a projection exposure apparatus, comprising the following method steps: detecting the particle in the mask system, providing laser radiation, removing the particle by irradiating the particle with laser radiation. According to the invention, the wavelength of the laser radiation corresponds to that of used radiation used by the projection exposure apparatus.

公开(公告)号：US20160004151A1

公开(公告)日：2016-01-07

申请号：US14767263

申请日：2014-02-17

Applicant: CARL ZEISS SMS LTD

Inventor： Sergey Oshemkov

IPC: G03F1/72

CPC classification number: G03F1/72 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/24

Abstract: A method for repairing a defect on a substrate surface includes placing on the defect a nanoparticle that includes a conductive material. A region of the substrate surface in which the nanoparticle is placed is irradiated, the region being larger than the nanoparticle. An energy density of the irradiation is below a modification threshold for the substrate surface.

Abstract translation: 用于修复衬底表面上的缺陷的方法包括在缺陷上放置包括导电材料的纳米颗粒。 照射放置纳米颗粒的基板表面的区域，该区域大于纳米颗粒。 照射的能量密度低于衬底表面的修改阈值。

公开(公告)号：US11774870B2

公开(公告)日：2023-10-03

申请号：US17882948

申请日：2022-08-08

Applicant: Carl Zeiss SMT GmbH ,  Carl Zeiss SMS Ltd.

Inventor： Sergey Oshemkov ,  Shao-Chi Wei ,  Joerg Frederik Blumrich ,  Martin Voelcker ,  Thomas Franz Karl Scheruebl

IPC: G03F7/00

CPC classification number: G03F7/70925

Abstract: A method for removing particles from a mask system for a projection exposure apparatus, including the following method steps: detecting the particle in the mask system, providing laser radiation, and removing the particle by irradiating the particle with laser radiation. The wavelength of the laser radiation corresponds to that of used radiation used by the projection exposure apparatus.

公开(公告)号：US09690191B2

公开(公告)日：2017-06-27

申请号：US14767263

申请日：2014-02-17

Applicant: Carl Zeiss SMS Ltd.

Inventor： Sergey Oshemkov ,  Vladimir Kruglyakov

IPC: G03F1/72 ,  G03F1/24 ,  B82Y10/00 ,  B82Y40/00

CPC classification number: G03F1/72 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/24

Abstract: A method for repairing a defect on a substrate surface includes placing on the defect a nanoparticle that includes a conductive material. A region of the substrate surface in which the nanoparticle is placed is irradiated, the region being larger than the nanoparticle. An energy density of the irradiation is below a modification threshold for the substrate surface.