公开(公告)号：US20080124826A1

公开(公告)日：2008-05-29

申请号：US11688141

申请日：2007-03-19

Applicant: Cheng-Ming Lin ,  Jen-His Chiu

Inventor： Cheng-Ming Lin ,  Jen-His Chiu

IPC: G05B13/02

CPC classification number: G05B13/042

Abstract: A method for improving critical dimension uniformity of a substrate is provided. An equation based on a proximity trend of a pattern on a first substrate is determined. The equation is applied in a regression model to determine a parameter value of a second substrate. A recipe of an exposure equipment is adjusted based on the parameter value for exposure of the second substrate. Also, a system for controlling critical dimension of a pattern on a substrate is provided. The system includes an advance process control system for collecting exposure data of the substrate, and a regression model within the advance process control system for analyzing the exposure data and determining a parameter value of a recipe of the exposure tool. The regression model is operable to determine an equation based on a proximity trend of the substrate.

Abstract translation: 提供了一种改善基板的临界尺寸均匀性的方法。 确定基于第一基板上的图案的接近趋势的等式。 该方程式应用于回归模型中以确定第二衬底的参数值。 基于用于第二基板的曝光的参数值来调整曝光设备的配方。 另外，提供了一种用于控制衬底上图案的临界尺寸的系统。 该系统包括用于收集基板的曝光数据的前进过程控制系统和用于分析曝光数据并确定曝光工具的配方的参数值的提前过程控制系统内的回归模型。 回归模型可操作以基于衬底的接近趋势来确定方程。

公开(公告)号：US07923265B2

公开(公告)日：2011-04-12

申请号：US11688141

申请日：2007-03-19

Applicant: Cheng-Ming Lin ,  Jen-His Chiu

Inventor： Cheng-Ming Lin ,  Jen-His Chiu

IPC: H01L21/00

CPC classification number: G05B13/042

Abstract: A method for improving critical dimension uniformity of a substrate is provided. An equation based on a proximity trend of a pattern on a first substrate is determined. The equation is applied in a regression model to determine a parameter value of a second substrate. A recipe of an exposure equipment is adjusted based on the parameter value for exposure of the second substrate. Also, a system for controlling critical dimension of a pattern on a substrate is provided. The system includes an advance process control system for collecting exposure data of the substrate, and a regression model within the advance process control system for analyzing the exposure data and determining a parameter value of a recipe of the exposure tool. The regression model is operable to determine an equation based on a proximity trend of the substrate.

Abstract translation: 提供了一种改善基板的临界尺寸均匀性的方法。 确定基于第一基板上的图案的接近趋势的等式。 该方程式应用于回归模型中以确定第二衬底的参数值。 基于用于第二基板的曝光的参数值来调整曝光设备的配方。 另外，提供了一种用于控制衬底上的图案的临界尺寸的系统。 该系统包括用于收集基板的曝光数据的前进过程控制系统和用于分析曝光数据并确定曝光工具的配方的参数值的提前过程控制系统内的回归模型。 回归模型可操作以基于衬底的接近趋势来确定方程。

公开(公告)号：US20080169058A1

公开(公告)日：2008-07-17

申请号：US11733366

申请日：2007-04-10

Applicant: Chung-Chih Feng ,  Pai-Hsiang Wu ,  Yuan-Fang Tsai ,  Jung-Hsien Cheng ,  Cheng-Ming Lin ,  Chien-Chia Huang

Inventor： Chung-Chih Feng ,  Pai-Hsiang Wu ,  Yuan-Fang Tsai ,  Jung-Hsien Cheng ,  Cheng-Ming Lin ,  Chien-Chia Huang

IPC: B32B27/12 ,  B32B27/20 ,  D06N3/18

CPC classification number: B32B27/12 ,  D06N3/0063 ,  D06N3/0097 ,  D06N3/145 ,  Y10T428/24438 ,  Y10T428/31504 ,  Y10T442/3854 ,  Y10T442/674

Abstract: A method is provided for making artificial leather upside down. In the method, an upper color layer is provided on releasing paper and the upper color layer is dried. A lower color layer is provided on the upper color layer and the lower color layer is dried. A paste layer is provided on the lower color layer and the pate layer is preliminarily dried. A substrate is attached to the paste layer. The paste layer is dried. The releasing paper is removed.

Abstract translation: 提供了将人造革倒立制造的方法。 在该方法中，在剥离纸上设置上色层，并且上色层被干燥。 在上色层上设置较低色层，下层彩色层被干燥。 在下色层上设置糊状层，预先干燥头层。 衬底附着到膏层上。 将糊层干燥。 取出纸张。

公开(公告)号：US07008730B2

公开(公告)日：2006-03-07

申请号：US10338118

申请日：2003-01-07

Applicant: Cheng-Ming Lin

Inventor： Cheng-Ming Lin

IPC: G03F9/00 ,  G03C5/00

CPC classification number: G03F1/32 ,  G03F1/54

Abstract: An attenuating phase shifting mask for forming contact holes in a layer of negative resist, a method of forming the mask, and a method of forming the contact holes are described. The mask is formed from a mask blank having a layer of attenuating phase shifting material formed on a transparent mask blank. The attenuating phase shifting material has a transmittance of greater than 20% and between about 20% and 50% for light having a wavelength of 193 nanometers. The mask is a dark tone mask having mask elements formed of the attenuating phase shifting material at the locations of the mask corresponding to the locations of the contact holes. The mask is used to expose a layer of negative resist which is then developed to form the contact holes.

Abstract translation: 描述了用于在负抗蚀剂层中形成接触孔的衰减相移掩模，形成掩模的方法以及形成接触孔的方法。 掩模由具有形成在透明掩模板上的衰减相移材料层的掩模坯料形成。 衰减相移材料对于波长为193纳米的光具有大于20％的透射率和约20％至50％的透射率。 掩模是在掩模对应于接触孔的位置的位置处由衰减相移材料形成的掩模元件的暗色调掩模。 该掩模用于暴露一层负性抗蚀剂，然后将其显影以形成接触孔。

公开(公告)号：US06905802B2

公开(公告)日：2005-06-14

申请号：US10637862

申请日：2003-08-09

Applicant: Cheng-Ming Lin

Inventor： Cheng-Ming Lin

IPC: G03C5/00 ,  G03F1/00 ,  G03F7/00 ,  G03F7/20 ,  G03F9/00

CPC classification number: G03F1/32 ,  G03F7/70283 ,  G03F7/7045 ,  G03F7/70466 ,  Y10S430/143 ,  Y10S430/146

Abstract: A method for exposing a blanket photoresist layer employs: (1) a first direct write exposure of the blanket photoresist layer to form therein an exposed peripheral sub-region of a desired exposed pattern; and (2) a second masked photoexposure of the blanket photoresist layer to form therein a masked photoexposed bulk sub-region of the desired exposed pattern which overlaps but does not extend beyond the exposed peripheral sub-region. The once masked photoexposed once direct write exposed blanket photoresist layer may be developed to form a patterned photoresist layer employed for forming a patterned opaque layer border within an opaque bordered attenuated phase shift mask.

Abstract translation: 用于曝光橡皮布光致抗蚀剂层的方法采用：（1）毯式光致抗蚀剂层的第一直接写入曝光，以在其中形成所需曝光图案的暴露外围子区域; 和（2）所述覆盖光致抗蚀剂层的第二掩蔽曝光，以在其中形成与所暴露的外围子区域重叠但不延伸超过所述暴露的外围子区域的所需曝光图案的被掩蔽的光曝光的体区子区域。 可以显影一次被曝光的一次直接写曝光的覆盖光致抗蚀剂层，以形成用于在不透明的边界衰减相移掩模内形成图案化不透明层边界的图案化光致抗蚀剂层。

公开(公告)号：US20050048375A1

公开(公告)日：2005-03-03

申请号：US10649310

申请日：2003-08-27

Applicant: Cheng-Ming Lin

Inventor： Cheng-Ming Lin

IPC: G03C5/00 ,  G03F1/00 ,  G03F9/00

CPC classification number: G03F1/32

Abstract: A method of patterning an attenuated phase-shifting mask from a mask blank, is provided. The mask blank has an attenuating and phase-shifting layer formed over a transparent layer. The phase-shifting layer has an initial thickness. The initial thickness of the phase-shifting layer is adapted to provide a first predetermined phase shift for a first wavelength of light passing therethrough. The initial thickness of the phase shifting layer is reduced to a first thickness. Portions of the phase-shifting layer are removed to form a pattern of clear areas. The first thickness of the phase-shifting layer at dark areas is adapted to provide a second predetermined phase shift for a second wavelength of light passing therethrough relative to the same light of the second wavelength passing through the clear areas. The first wavelength differs from the second wavelength.

Abstract translation: 提供了从掩模坯料图案化衰减的相移掩模的方法。 掩模空白具有形成在透明层上的衰减和相移层。 相移层具有初始厚度。 相移层的初始厚度适于为通过其中的第一波长的光提供第一预定相移。 相移层的初始厚度减小到第一厚度。 去除相移层的部分以形成清晰区域的图案。 相对于通过透明区域的第二波长的相同的光，适于在暗区域的相移层的第一厚度适于为通过其中的第二波长的光提供第二预定相移。 第一波长与第二波长不同。

公开(公告)号：US08158015B2

公开(公告)日：2012-04-17

申请号：US11686773

申请日：2007-03-15

Applicant: Cheng-Ming Lin ,  Joy Huang

Inventor： Cheng-Ming Lin ,  Joy Huang

IPC: G01L21/30

CPC classification number: G03F1/80 ,  G03F1/32

Abstract: The present disclosure provides a mask and a method of determining etching times for etching the mask. In one embodiment, values for a main etching time and an over-etching time are determined simultaneously based on a desired critical dimension (CD) parameter and a desired phase parameter for the mask.

Abstract translation: 本公开提供了一种掩模和确定用于蚀刻掩模的蚀刻时间的方法。 在一个实施例中，基于期望的临界尺寸（CD）参数和掩模的期望的相位参数同时确定主蚀刻时间和过蚀刻时间的值。

公开(公告)号：US20090025810A1

公开(公告)日：2009-01-29

申请号：US11867163

申请日：2007-10-04

Applicant: Andrew M. Wo ,  Cheng-Ming Lin ,  Yu-Shiang Lai

Inventor： Andrew M. Wo ,  Cheng-Ming Lin ,  Yu-Shiang Lai

IPC: F15C3/00

CPC classification number: B01F11/0258 ,  B01F13/0059 ,  B01L3/5027 ,  H02K33/18 ,  Y10T137/2087

Abstract: The present invention relates to a MEMS-based micro-oscillator which can generate specific vortical pattern in a micro-channel. The micro-vortex generator is composed of a suspended bridge with a gold-plated, rectangular flat-plate as the primary structure. When an AC current passed through the gold leads under an external magnetic field, the plate will oscillate due to Lorenz force, thereby generating micro-vortices.

Abstract translation: 本发明涉及一种可在微通道中产生特定涡旋图案的基于MEMS的微振荡器。 微涡流发生器由具有镀金，矩形平板作为主要结构的悬挂桥组成。 当交流电流在外部磁场下通过金引线时，板将由于洛伦兹力而振荡，从而产生微旋涡。

公开(公告)号：US20080226991A1

公开(公告)日：2008-09-18

申请号：US11686773

申请日：2007-03-15

Applicant: Cheng-Ming Lin ,  Joy Huang

Inventor： Cheng-Ming Lin ,  Joy Huang

IPC: G03F1/00

CPC classification number: G03F1/80 ,  G03F1/32

Abstract: The present disclosure provides a mask and a method of determining etching times for etching the mask. In one embodiment, values for a main etching time and an over-etching time are determined simultaneously based on a desired critical dimension (CD) parameter and a desired phase parameter for the mask.

Abstract translation: 本公开提供了一种掩模和确定用于蚀刻掩模的蚀刻时间的方法。 在一个实施例中，基于期望的临界尺寸（CD）参数和掩模的期望的相位参数同时确定主蚀刻时间和过蚀刻时间的值。

公开(公告)号：US20060234141A1

公开(公告)日：2006-10-19

申请号：US11425423

申请日：2006-06-21

Applicant: Cheng-Ming Lin

Inventor： Cheng-Ming Lin

IPC: G03C5/00 ,  G03F1/00

CPC classification number: G03F1/32 ,  G03F1/72

Abstract: In accordance with the objectives of the invention a new method is provided for the repair of an attenuated phase shifting mask having a contact pattern. The invention etches a single trench in the quartz substrate of the phase shifter mask and removes the impact of a void in the phase shifter material. Alternatively, the invention provides for first conventionally restoring the original dimensions of a contact hole in which a pinhole is present and then etching a single or a double trench in the exposed substrate of the restored contact opening.

Abstract translation: 根据本发明的目的，提供了一种用于修复具有接触图案的衰减相移掩模的新方法。 本发明蚀刻移相器掩模的石英衬底中的单个沟槽并去除移相器材料中空隙的冲击。 或者，本发明提供了首先常规地恢复其中存在针孔的接触孔的原始尺寸，然后在恢复的接触开口的暴露的基底中蚀刻单个或双沟槽。