公开(公告)号：US20120062809A1

公开(公告)日：2012-03-15

申请号：US13233120

申请日：2011-09-15

申请人： Chiho KOKUBO ,  Hirokazu YAMAGATA ,  Shunpei YAMAZAKI

发明人： Chiho KOKUBO ,  Hirokazu YAMAGATA ,  Shunpei YAMAZAKI

IPC分类号： G02F1/133

CPC分类号： H01L21/02672 ,  G02F1/13454 ,  G09G3/30 ,  G09G3/3225 ,  G09G3/3233 ,  G09G3/3648 ,  G09G2300/0842 ,  G09G2300/0861 ,  H01L21/02532 ,  H01L21/2022 ,  H01L27/12 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/1277 ,  H01L27/3244 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78624 ,  H01L29/78645 ,  H01L29/78675

摘要： There is disclosed a semiconductor device and a method of fabricating the semiconductor device in which a heat treatment time required for crystal growth is shortened and a process is simplified. Two catalytic element introduction regions are arranged at both sides of one active layer and crystallization is made. A boundary portion where crystal growth from one catalytic element introduction region meets crystal growth from the other catalytic element introduction region is formed in a region which becomes a source region or drain region.

摘要翻译： 公开了半导体器件和制造半导体器件的方法，其中缩短了晶体生长所需的热处理时间并简化了工艺。 两个催化元素引入区域布置在一个有源层的两侧，并进行结晶。 在成为源极区域或漏极区域的区域中形成有来自一个催化剂元件导入区域的晶体生长与其他催化剂元素导入区域的晶体生长相交的边界部分。

公开(公告)号：US20100195012A1

公开(公告)日：2010-08-05

申请号：US12755801

申请日：2010-04-07

申请人： Chiho KOKUBO ,  Hirokazu YAMAGATA ,  Shunpei YAMAZAKI

发明人： Chiho KOKUBO ,  Hirokazu YAMAGATA ,  Shunpei YAMAZAKI

IPC分类号： G02F1/1368 ,  H01L33/00

CPC分类号： H01L21/02672 ,  G02F1/13454 ,  G09G3/30 ,  G09G3/3225 ,  G09G3/3233 ,  G09G3/3648 ,  G09G2300/0842 ,  G09G2300/0861 ,  H01L21/02532 ,  H01L21/2022 ,  H01L27/12 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/1277 ,  H01L27/3244 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78624 ,  H01L29/78645 ,  H01L29/78675

摘要： There is disclosed a semiconductor device and a method of fabricating the semiconductor device in which a heat treatment time required for crystal growth is shortened and a process is simplified. Two catalytic element introduction regions are arranged at both sides of one active layer and crystallization is made. A boundary portion where crystal growth from one catalytic element introduction region meets crystal growth from the other catalytic element introduction region is formed in a region which becomes a source region or drain region.

摘要翻译： 公开了半导体器件和制造半导体器件的方法，其中缩短了晶体生长所需的热处理时间并简化了工艺。 两个催化元素引入区域布置在一个有源层的两侧，并进行结晶。 在成为源极区域或漏极区域的区域中形成有来自一个催化剂元件导入区域的晶体生长与其他催化剂元素导入区域的晶体生长相交的边界部分。

公开(公告)号：US20090128026A1

公开(公告)日：2009-05-21

申请号：US12352615

申请日：2009-01-13

申请人： Hirokazu YAMAGATA ,  Shunpei YAMAZAKI ,  Toru TAKAYAMA

发明人： Hirokazu YAMAGATA ,  Shunpei YAMAZAKI ,  Toru TAKAYAMA

IPC分类号： H01J1/63

CPC分类号： H01L51/524 ,  H01L27/3246 ,  H01L27/3258 ,  H01L51/0003 ,  H01L51/5056 ,  H01L51/5203 ,  H01L51/5206 ,  H01L51/5253 ,  H01L51/56 ,  Y10S438/976

摘要： A high-quality light emitting device is provided which has a long-lasting light emitting element free from the problems of conventional ones because of a structure that allows less degradation, and a method of manufacturing the light emitting device is provided. After a bank is formed, an exposed anode surface is wiped using a PVA (polyvinyl alcohol)-based porous substance or the like to level the surface and remove dusts from the surface. An insulating film is formed between an interlayer insulating film on a TFT and the anode. Alternatively, plasma treatment is performed on the surface of the interlayer insulating film on the TFT for surface modification.

摘要翻译： 提供了一种高品质的发光装置，其具有不含常规问题的持久发光元件，因为能够降低劣化的结构，并且提供了制造发光器件的方法。 在形成堤之后，使用基于PVA（聚乙烯醇）的多孔物质等将暴露的阳极表面擦拭以使表面平整并从表面除去灰尘。 在TFT的层间绝缘膜和阳极之间形成绝缘膜。 或者，在表面改性用TFT上的层间绝缘膜的表面进行等离子体处理。

公开(公告)号：US20110136266A1

公开(公告)日：2011-06-09

申请号：US13020826

申请日：2011-02-04

申请人： Hirokazu YAMAGATA ,  Yoshimi ADACHI ,  Noriko SHIBATA

发明人： Hirokazu YAMAGATA ,  Yoshimi ADACHI ,  Noriko SHIBATA

IPC分类号： H01L21/66

CPC分类号： H01L51/0031 ,  H01L51/0032 ,  H01L51/52 ,  H01L51/5253 ,  H01L51/56 ,  H01L2251/568 ,  Y10T428/31504

摘要： A method of manufacturing a light emitting device is provided in which satisfactory image display can be performed by the investigation and repair of short circuits in defect portions of light emitting elements. A backward direction electric current flows in the defect portions if a reverse bias voltage is applied to the light emitting elements having the defect portions. Emission of light which occurred from the backward direction electric current flow is measured by using an emission microscope, specifying the position of the defect portions, and short circuit locations can be repaired by irradiating a laser to the defect portions, turning them into insulators.

摘要翻译： 提供了一种制造发光器件的方法，其中可以通过调查和修复发光元件的缺陷部分中的短路来执行令人满意的图像显示。 如果对具有缺陷部分的发光元件施加反向偏置电压，则向缺陷部分流过反向电流。 通过使用规定缺陷部位的位置的发射型显微镜来测量从逆向电流流出的光的发射，并且可以通过向缺陷部照射激光，将其转换成绝缘体来修复短路位置。