公开(公告)号：US20090128026A1

公开(公告)日：2009-05-21

申请号：US12352615

申请日：2009-01-13

申请人： Hirokazu YAMAGATA ,  Shunpei YAMAZAKI ,  Toru TAKAYAMA

发明人： Hirokazu YAMAGATA ,  Shunpei YAMAZAKI ,  Toru TAKAYAMA

IPC分类号： H01J1/63

CPC分类号： H01L51/524 ,  H01L27/3246 ,  H01L27/3258 ,  H01L51/0003 ,  H01L51/5056 ,  H01L51/5203 ,  H01L51/5206 ,  H01L51/5253 ,  H01L51/56 ,  Y10S438/976

摘要： A high-quality light emitting device is provided which has a long-lasting light emitting element free from the problems of conventional ones because of a structure that allows less degradation, and a method of manufacturing the light emitting device is provided. After a bank is formed, an exposed anode surface is wiped using a PVA (polyvinyl alcohol)-based porous substance or the like to level the surface and remove dusts from the surface. An insulating film is formed between an interlayer insulating film on a TFT and the anode. Alternatively, plasma treatment is performed on the surface of the interlayer insulating film on the TFT for surface modification.

摘要翻译： 提供了一种高品质的发光装置，其具有不含常规问题的持久发光元件，因为能够降低劣化的结构，并且提供了制造发光器件的方法。 在形成堤之后，使用基于PVA（聚乙烯醇）的多孔物质等将暴露的阳极表面擦拭以使表面平整并从表面除去灰尘。 在TFT的层间绝缘膜和阳极之间形成绝缘膜。 或者，在表面改性用TFT上的层间绝缘膜的表面进行等离子体处理。

公开(公告)号：US20120286315A1

公开(公告)日：2012-11-15

申请号：US13558374

申请日：2012-07-26

申请人： Toru TAKAYAMA ,  Junya MARUYAMA ,  Yumiko OHNO ,  Masakazu MURAKAMI ,  Toshiji HAMATANI ,  Hideaki KUWABARA ,  Shunpei YAMAZAKI

发明人： Toru TAKAYAMA ,  Junya MARUYAMA ,  Yumiko OHNO ,  Masakazu MURAKAMI ,  Toshiji HAMATANI ,  Hideaki KUWABARA ,  Shunpei YAMAZAKI

IPC分类号： H01L27/32

CPC分类号： H01L27/3276 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1266 ,  H01L27/14634 ,  H01L27/14643 ,  H01L27/14683 ,  H01L27/3272 ,  H01L29/66757 ,  H01L29/78603 ,  H01L31/105 ,  H01L51/0024 ,  H01L51/003 ,  H01L51/5212 ,  H01L51/5253 ,  H01L2221/68368

摘要： (OBJECT) The object is to provide a lightened semiconductor device and a manufacturing method thereof by pasting a layer to be peeled to various base materials.(MEANS FOR SOLVING THE PROBLEM) In the present invention, a layer to be peeled is formed on a substrate, then a seal substrate provided with an etching stopper film is pasted with a binding material on the layer to be peeled, followed by removing only the seal substrate by etching or polishing. The remaining etching stopper film is functioned as a blocking film. In addition, a magnet sheet may be pasted as a pasting member.

摘要翻译： （目的）本发明的目的是提供一种减轻半导体器件及其制造方法，该方法是将待剥离的层粘贴到各种基材上。 （解决问题的手段）在本发明中，在基板上形成被剥离层，然后将具有蚀刻阻挡膜的密封基板上的粘合材料粘贴在被剥离层上，然后仅除去 密封衬底通过蚀刻或抛光。 剩余的蚀刻阻挡膜用作阻挡膜。 此外，可以将磁片作为粘贴部件粘贴。

公开(公告)号：US20110312111A1

公开(公告)日：2011-12-22

申请号：US13217311

申请日：2011-08-25

申请人： Shunpei YAMAZAKI ,  Toru TAKAYAMA ,  Junya MARUYAMA ,  Yumiko OHNO

发明人： Shunpei YAMAZAKI ,  Toru TAKAYAMA ,  Junya MARUYAMA ,  Yumiko OHNO

IPC分类号： H01L33/50

CPC分类号： H01L27/1218 ,  H01L23/291 ,  H01L27/1214 ,  H01L27/1266 ,  H01L27/3244 ,  H01L29/66757 ,  H01L29/78603 ,  H01L51/0002 ,  H01L51/0021 ,  H01L51/0024 ,  H01L51/003 ,  H01L2221/68368 ,  H01L2924/0002 ,  Y10S438/928 ,  Y10S438/982 ,  H01L2924/00

摘要： It is an object of the present invention to provide a peeling method that causes no damage to a layer to be peeled and to allow not only a layer to be peeled with a small surface area but also a layer to be peeled with a large surface area to be peeled entirely. Further, it is also an object of the present invention to bond a layer to be peeled to various base materials to provide a lighter semiconductor device and a manufacturing method thereof. Particularly, it is an object to bond various elements typified by a TFT, (a thin film diode, a photoelectric conversion element comprising a PIN junction of silicon, or a silicon resistance element) to a flexible film to provide a lighter semiconductor device and a manufacturing method thereof.

摘要翻译： 本发明的目的是提供一种不会对被剥离层造成损伤的剥离方法，并且不仅使表面积小的层被剥离，而且还允许具有大表面积的被剥离层 要完全去皮。 此外，本发明的另一个目的是将要剥离的层粘合到各种基材上以提供更轻的半导体器件及其制造方法。 特别地，目的是将由TFT表示的各种元素（薄膜二极管，包含硅的PIN结的光电转换元件或硅电阻元件）粘合到柔性膜上以提供更轻的半导体器件和 其制造方法。

公开(公告)号：US20100195033A1

公开(公告)日：2010-08-05

申请号：US12759999

申请日：2010-04-14

申请人： Toru TAKAYAMA ,  Junya MARUYAMA ,  Yumiko OHNO ,  Masakazu MURAKAMI ,  Toshiji HAMATANI ,  Hideaki KUWABARA ,  Shunpei YAMAZAKI

发明人： Toru TAKAYAMA ,  Junya MARUYAMA ,  Yumiko OHNO ,  Masakazu MURAKAMI ,  Toshiji HAMATANI ,  Hideaki KUWABARA ,  Shunpei YAMAZAKI

IPC分类号： G02F1/1333

CPC分类号： H01L27/3276 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1266 ,  H01L27/14634 ,  H01L27/14643 ,  H01L27/14683 ,  H01L27/3272 ,  H01L29/66757 ,  H01L29/78603 ,  H01L31/105 ,  H01L51/0024 ,  H01L51/003 ,  H01L51/5212 ,  H01L51/5253 ,  H01L2221/68368

摘要： (OBJECT) The object is to provide a lightened semiconductor device and a manufacturing method thereof by pasting a layer to be peeled to various base materials.(MEANS FOR SOLVING THE PROBLEM) In the present invention, a layer to be peeled is formed on a substrate, then a seal substrate provided with an etching stopper film is pasted with a binding material on the layer to be peeled, followed by removing only the seal substrate by etching or polishing. The remaining etching stopper film is functioned as a blocking film. In addition, a magnet sheet may be pasted as a pasting member.

摘要翻译： （目的）本发明的目的是提供一种减轻半导体器件及其制造方法，该方法是将待剥离的层粘贴到各种基材上。 （解决问题的手段）在本发明中，在基板上形成被剥离层，然后将具有蚀刻阻挡膜的密封基板上的粘合材料粘贴在被剥离层上，然后仅除去 密封衬底通过蚀刻或抛光。 剩余的蚀刻阻挡膜用作阻挡膜。 此外，可以将磁片作为粘贴部件粘贴。

公开(公告)号：US20090239320A1

公开(公告)日：2009-09-24

申请号：US12432906

申请日：2009-04-30

申请人： Toru TAKAYAMA ,  Junya MARUYAMA ,  Mayumi MIZUKAMI ,  Shunpei YAMAZAKI

发明人： Toru TAKAYAMA ,  Junya MARUYAMA ,  Mayumi MIZUKAMI ,  Shunpei YAMAZAKI

IPC分类号： H01L33/00 ,  B32B38/10 ,  H01L21/50

CPC分类号： H01L27/1266 ,  G02F1/1339 ,  G02F1/1341 ,  G02F1/1362 ,  G02F2001/13613 ,  H01L21/2007 ,  H01L21/76251 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/1248 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/7869 ,  H01L33/44 ,  H01L2227/326 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides a peeling off method without giving damage to the peeled off layer, and aims at being capable of peeling off not only a peeled off layer having a small area but also a peeled off layer having a large area over the entire surface at excellent yield ratio. The metal layer or nitride layer 11 is provided on the substrate, and further, the oxide layer 12 being contact with the foregoing metal layer or nitride layer 11 is provided, and furthermore, if the lamination film formation or the heat processing of 500° C. or more in temperature is carried out, it can be easily and clearly separated in the layer or on the interface with the oxide layer 12 by the physical means.

摘要翻译： 本发明提供一种剥离方法，而不会对剥离层造成损害，其目的在于，不仅剥离面积小的剥离层，而且能够剥离整个表面上具有大面积的剥离层 优良的产率。 金属层或氮化物层11设置在基板上，并且还提供与上述金属层或氮化物层11接触的氧化物层12，此外，如果层叠膜形成或500℃的热处理 或更高的温度，可以通过物理手段在层中或与氧化物层12的界面上容易且清楚地分离。

公开(公告)号：US20090197012A1

公开(公告)日：2009-08-06

申请号：US12417158

申请日：2009-04-02

申请人： Shunpei YAMAZAKI ,  Toru TAKAYAMA ,  Mitsunori SAKAMA ,  Hisashi ABE ,  Hiroshi UEHARA ,  Mika ISHIWATA

发明人： Shunpei YAMAZAKI ,  Toru TAKAYAMA ,  Mitsunori SAKAMA ,  Hisashi ABE ,  Hiroshi UEHARA ,  Mika ISHIWATA

IPC分类号： C23C14/02

CPC分类号： H01J37/32477 ,  C23C16/4401 ,  C23C16/5096 ,  Y10S438/905

摘要： In a plasma CVD apparatus, unnecessary discharge such as arc discharge is prevented, the amount of particles due to peeling of films attached to a reaction chamber is reduced, and the percentage of a time contributing to production in hours of operation of the apparatus is increased while enlargement of the apparatus and easy workability are maintained. The plasma CVD apparatus is configured such that in a conductive reaction chamber 104 with a power source 113, a vacuum exhausting means 118, and a reaction gas introduction pipe 114, plasma 115 is generated in a space surrounded by an electrode 111, a substrate holder 112, and an insulator 120.

摘要翻译： 在等离子体CVD装置中，防止了不必要的放电，例如电弧放电，由于附着在反应室上的膜的剥离引起的颗粒的量减少，并且在该设备的工作时间内有助于生产的时间的百分比增加 同时保持设备的扩大和易于加工的性能。 等离子体CVD装置被构造成使得在具有电源113，真空排气装置118和反应气体引入管114的导电反应室104中，在由电极111围绕的空间中产生等离子体115，衬底保持器 112和绝缘体120。

公开(公告)号：US20090108263A1

公开(公告)日：2009-04-30

申请号：US12251533

申请日：2008-10-15

申请人： Shunpei YAMAZAKI ,  Toru TAKAYAMA

发明人： Shunpei YAMAZAKI ,  Toru TAKAYAMA

IPC分类号： H01L29/06 ,  H01J63/04 ,  H01L33/00 ,  H01L51/50 ,  H01L31/0216

CPC分类号： H01L29/78696 ,  G02F1/133305 ,  G02F1/13454 ,  G02F2001/13613 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/1266 ,  H01L27/1285 ,  H01L27/3244 ,  H01L29/78603 ,  H01L2924/3511

摘要： The invention relates to a semiconductor device including a plurality of thin film transistors provided on a base member having a curved surface. The surface may be bent in either a convex shape or a concave shape. All channel length directions of the plurality of thin film transistors may also be aligned in the same direction. Further, the channel length direction may be different from the direction in which the base member is bent. A pixel portion and a driver circuit portion may also be provided on the base member. The invention also includes a method of manufacturing a semiconductor device including forming a layer to be peeled including an element of a substrate, bonding a support member to the layer to be peeled, and bonding a transfer body to the layer to be peeled.

摘要翻译： 本发明涉及一种半导体器件，包括设置在具有弯曲表面的基底部件上的多个薄膜晶体管。 表面可以弯曲成凸形或凹形。 多个薄膜晶体管的所有沟道长度方向也可以在相同的方向上对准。 此外，通道长度方向可以不同于基件弯曲的方向。 像素部分和驱动器电路部分也可以设置在基底部件上。 本发明还包括一种制造半导体器件的方法，该半导体器件包括形成包含基片的元件的被剥离层，将支撑构件粘合到待剥离的层上，并将转移体接合到待剥离的层上。

公开(公告)号：US20080303408A1

公开(公告)日：2008-12-11

申请号：US12175516

申请日：2008-07-18

申请人： Shunpei YAMAZAKI ,  Toru TAKAYAMA ,  Mai AKIBA

发明人： Shunpei YAMAZAKI ,  Toru TAKAYAMA ,  Mai AKIBA

IPC分类号： H01L33/00

CPC分类号： H01L51/0097 ,  H01L27/3244 ,  H01L27/326 ,  H01L51/5237 ,  H01L51/5253 ,  H01L51/5256 ,  H01L51/529 ,  H01L51/56 ,  H01L2221/68368 ,  H01L2227/326 ,  H01L2251/5315 ,  H01L2251/5338

摘要： The present invention has an object of providing a light emitting device including an OLED formed on a plastic substrate, which can prevent the degradation due to penetration of moisture or oxygen. On a plastic substrate, a plurality of films for preventing oxygen or moisture from penetrating into an organic light emitting layer in the OLED (hereinafter, referred to as barrier films) and a film having a smaller stress than that of the barrier-films (hereinafter, referred to as a stress relaxing film), the film being interposed between the barrier films, are provided. Owing to a laminate structure of a plurality of barrier films, even if a crack occurs in one of the barrier films, the other barrier film(s) can effectively prevent moisture or oxygen from penetrating into the organic light emitting layer. Moreover, the stress relaxing film, which has a smaller stress than that of the barrier films, is interposed between the barrier films, thereby making it possible to reduce a stress of the entire sealing film. As a result, a crack due to stress hardly occurs.

摘要翻译： 本发明的目的是提供一种发光装置，其包括形成在塑料基板上的OLED，其能够防止由于水分或氧气的渗透而导致的劣化。 在塑料基板上，用于防止氧或水分渗透到OLED中的有机发光层（以下称为阻挡膜）中的多个膜和具有比阻挡膜的应力小的应力的膜 被称为应力缓和膜），设置在阻挡膜之间的膜。 由于多个阻挡膜的层压结构，即使在一个阻挡膜中发生裂纹，另一个阻挡膜可以有效地防止水分或氧气渗入有机发光层。 此外，在阻挡膜之间插入有比阻挡膜小的应力的应力缓和膜，从而可以减小整个密封膜的应力。 结果，几乎不发生由于应力引起的裂纹。

公开(公告)号：US20130029447A1

公开(公告)日：2013-01-31

申请号：US13587111

申请日：2012-08-16

申请人： Junya MARUYAMA ,  Toru TAKAYAMA ,  Yumiko OHNO ,  Shunpei YAMAZAKI

发明人： Junya MARUYAMA ,  Toru TAKAYAMA ,  Yumiko OHNO ,  Shunpei YAMAZAKI

IPC分类号： H01L33/08

CPC分类号： H01L27/1218 ,  H01L21/76251 ,  H01L27/1214 ,  H01L27/1248 ,  H01L27/1266 ,  H01L29/78603 ,  H01L33/24 ,  H01L33/44 ,  H01L33/56 ,  H01L33/62 ,  H01L2221/68368

摘要： A substrate and a delamination film are separated by a physical means, or a mechanical means in a state where a metal film formed over a substrate, and a delamination layer comprising an oxide film including the metal and a film comprising silicon, which is formed over the metal film, are provided. Specifically, a TFT obtained by forming an oxide layer including the metal over a metal film; crystallizing the oxide layer by heat treatment; and performing delamination in a layer of the oxide layer or at both of the interface of the oxide layer is formed.

摘要翻译： 在基板上形成金属膜的状态下，通过物理手段或机械装置分离基板和分层膜，以及包含包含金属的氧化物膜和包含硅的膜的分层，其形成在 提供金属膜。 具体地说，通过在金属膜上形成包含金属的氧化物层而获得的TFT; 通过热处理使氧化层结晶; 并且在氧化物层的一层或氧化物层的界面上形成分层。

公开(公告)号：US20120201955A1

公开(公告)日：2012-08-09

申请号：US13449396

申请日：2012-04-18

申请人： Shunpei YAMAZAKI ,  Toru TAKAYAMA ,  Takeshi FUKUNAGA

发明人： Shunpei YAMAZAKI ,  Toru TAKAYAMA ,  Takeshi FUKUNAGA

IPC分类号： C23C16/458

CPC分类号： C23C14/564 ,  C23C14/04 ,  C23C14/12 ,  C23C14/243 ,  C23C14/54

摘要： A cleaning method of removing a vapor-deposition material adhering to equipments without exposure to the atmosphere is provided. A vapor-deposition material adhering to equipments (components of a film-forming apparatus) such as a substrate holder, a vapor-deposition mask, a mask holder, or an adhesion preventing shield provided in a film-forming chamber are subjected to heat treatment. Because of this, the adhering vapor-deposition material is re-sublimated, and removed by exhaust through a vacuum pump. By including such a cleaning method in the steps of manufacturing an electro-optical device, the manufacturing steps are shortened, and an electro-optical device with high reliability can be realized.

摘要翻译： 提供了一种清除附着在不暴露于大气中的设备的气相沉积材料的方法。 将附着在设置在成膜室上的设备（成膜装置的部件）如基板保持器，蒸镀掩模，掩模保持器或防粘附屏蔽物的气相沉积材料进行热处理 。 因此，附着的气相沉积材料被重新升华，并通过真空泵通过排气除去。 通过在制造电光装置的步骤中包括这种清洁方法，缩短了制造步骤，并且可以实现具有高可靠性的电光装置。