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公开(公告)号:US08741765B2
公开(公告)日:2014-06-03
申请号:US13076881
申请日:2011-03-31
申请人: Christian Schroiff
发明人: Christian Schroiff
IPC分类号: H01L21/44
CPC分类号: H01L24/11 , H01L24/742 , H01L24/94 , H01L2224/11462 , H01L2224/13111 , H01L2224/742 , H01L2224/94 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/014 , H01L2224/11 , H01L2924/00012 , H01L2924/00014
摘要: The uniformity of the composition of plated solder bumps from one batch of wafers to another is improved by controlling the rotational speed of the wafers based on the particular solder bump pattern. Embodiments include sequentially horizontal fountain electroplating a pattern of solder bumps, e.g., SnAg solder bumps, on a plurality batches of wafers and controlling the rotational speed of each batch of wafers during electroplating based on a calibration plot of the concentration of a solder bump component, e.g., Ag, as a function of rotational speed for each solder bump pattern, such that the uniformity of the Ag concentration in the patterns of solder bumps is greater than 95%, e.g., greater than 98%. Embodiments further include electroplating in the same plater sequential batches of wafers having both different patterns and different solder bump compositions at the same high throughput.
摘要翻译: 通过基于特定的焊料凸块图案来控制晶片的旋转速度,改善了从一批晶片到另一批晶片的电镀焊料凸起的组成的均匀性。 实施例包括在多个批次的晶片上依次水平喷镀电镀焊料凸块的图案,例如SnAg焊料凸块,并且基于焊料凸点组件的浓度的校准图来控制电镀期间每批晶片的旋转速度, 例如Ag,作为每个焊料凸块图案的旋转速度的函数,使得焊料凸块的图案中的Ag浓度的均匀性大于95%,例如大于98%。 实施例进一步包括在相同的高通量下,在具有不同图案和不同焊料凸块组成的相同的平板批次的晶片中进行电镀。
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2.
公开(公告)号:US20130087463A1
公开(公告)日:2013-04-11
申请号:US13253185
申请日:2011-10-05
申请人: Christian Schroiff , Michael Pietzner , Rico Bohla
发明人: Christian Schroiff , Michael Pietzner , Rico Bohla
CPC分类号: C25D7/12 , C25D17/001 , C25D21/14 , C25D21/18 , H01L24/11 , H01L2224/0345 , H01L2224/0361 , H01L2224/03912 , H01L2224/0401 , H01L2224/11462 , H01L2224/1147 , H01L2224/1181 , H01L2224/11849 , H01L2224/131 , H01L2924/01029 , H01L2924/01327 , H01L2924/00 , H01L2924/00012 , H01L2924/014
摘要: The present invention provides a system and a method for metal deposition in semiconductor processing, the system comprising a plating tool with one or more plating tanks, each containing one of a respective electrolyte solution, one or more replenishment sections each fluidly connected to a respective one of the one or more plating tanks, one or more draining sections each fluidly connected to a respective one of the one or more plating tanks, and a control system adapted to operate the one or more replenishing sections and/or the one or more draining sections so as to maintain a condition of the electrolyte solutions.
摘要翻译: 本发明提供一种用于半导体处理中的金属沉积的系统和方法,该系统包括具有一个或多个电镀槽的电镀工具,每个电镀槽包含相应的电解质溶液之一,一个或多个补充部分各自流体连接到相应的一个 一个或多个电镀槽的一个或多个排水部分,每个排放部分流体连接到所述一个或多个电镀槽中的相应一个电镀槽,以及控制系统,其适于操作所述一个或多个补充部分和/或所述一个或多个排液部分 以保持电解质溶液的状态。
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公开(公告)号:US20120252203A1
公开(公告)日:2012-10-04
申请号:US13076881
申请日:2011-03-31
申请人: Christian Schroiff
发明人: Christian Schroiff
IPC分类号: H01L21/60
CPC分类号: H01L24/11 , H01L24/742 , H01L24/94 , H01L2224/11462 , H01L2224/13111 , H01L2224/742 , H01L2224/94 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/014 , H01L2224/11 , H01L2924/00012 , H01L2924/00014
摘要: The uniformity of the composition of plated solder bumps from one batch of wafers to another is improved by controlling the rotational speed of the wafers based on the particular solder bump pattern. Embodiments include sequentially horizontal fountain electroplating a pattern of solder bumps, e.g., SnAg solder bumps, on a plurality batches of wafers and controlling the rotational speed of each batch of wafers during electroplating based on a calibration plot of the concentration of a solder bump component, e.g., Ag, as a function of rotational speed for each solder bump pattern, such that the uniformity of the Ag concentration in the patterns of solder bumps is greater than 95%, e.g., greater than 98%. Embodiments further include electroplating in the same plater sequential batches of wafers having both different patterns and different solder bump compositions at the same high throughput.
摘要翻译: 通过基于特定的焊料凸块图案来控制晶片的旋转速度,改善了从一批晶片到另一批晶片的电镀焊料凸起的组成的均匀性。 实施例包括在多个批次的晶片上依次水平喷镀电镀焊料凸块的图案,例如SnAg焊料凸块,并且基于焊料凸点组件的浓度的校准图来控制电镀期间每批晶片的旋转速度, 例如Ag,作为每个焊料凸块图案的旋转速度的函数,使得焊料凸块的图案中的Ag浓度的均匀性大于95%,例如大于98%。 实施例进一步包括在相同的高通量下,在具有不同图案和不同焊料凸块组成的相同的平板批次的晶片中进行电镀。
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