公开(公告)号：US20200075798A1

公开(公告)日：2020-03-05

申请号：US16118788

申请日：2018-08-31

Applicant: Cree, Inc.

Inventor： Joseph G. Sokol ,  Jefferson W. Plummer ,  Caleb A. Kent ,  Thomas A. Kuhr ,  Robert David Schmidt

IPC: H01L33/06 ,  H01L33/32 ,  H01L33/00

Abstract: Group III nitride light emitting diode (LED) structures with improved electrical performance are disclosed. A Group III nitride LED structure includes one or more n-type layers, one or more p-type layers, and an active region that includes a plurality of sequentially arranged barrier-well units. In certain embodiments, doping profiles of barrier layers of the barrier-well units are configured such that a doping concentration in some barrier-well units is different than a doping concentration in other barrier-well units. In certain embodiments, a doping profile of a particular barrier layer is non-uniform. In addition to active region configurations, the doping profiles and sequence of the n-type layers and p-type layers are configured to provide Group III nitride structures with higher efficiency, lower forward voltages, and improved forward voltage performance at elevated currents and temperatures.