公开(公告)号：US09059400B2

公开(公告)日：2015-06-16

申请号：US14203362

申请日：2014-03-10

Applicant: Crocus Technology Inc.

Inventor： Dafna Beery ,  Jason Reid ,  Jong Shin ,  Jean Pierre Nozieres ,  Olivier Joubert

IPC: H01L27/00 ,  H01L43/12 ,  H01L27/22 ,  H01L43/08

CPC classification number: H01L43/12 ,  H01L27/222 ,  H01L43/08

Abstract: A manufacturing method to form a memory device includes forming a hard mask on a magnetic stack. A first magnetic stack etch is performed to form exposed magnetic layers. A liner is applied to the exposed magnetic layers to form protected magnetic layers. A second magnetic stack etch forms a magnetic random access memory (MRAM) cell, where the liner prevents shunting between the protected magnetic layers.

Abstract translation: 形成存储器件的制造方法包括在磁性堆叠上形成硬掩模。 执行第一磁栈蚀刻以形成暴露的磁性层。 将衬垫施加到暴露的磁性层以形成受保护的磁性层。 第二磁栈蚀刻形成磁性随机存取存储器（MRAM）单元，其中衬垫防止受保护的磁层之间的分流。

公开(公告)号：US20140252516A1

公开(公告)日：2014-09-11

申请号：US14203362

申请日：2014-03-10

Applicant: Crocus Technology Inc.

Inventor： Dafna Beery ,  Jason Reid ,  Jong Shin ,  Jean Pierre Nozieres ,  Olivier Joubert

IPC: H01L43/02 ,  H01L43/12

CPC classification number: H01L43/12 ,  H01L27/222 ,  H01L43/08

Abstract: A manufacturing method to form a memory device includes forming a hard mask on a magnetic stack. A first magnetic stack etch is performed to form exposed magnetic layers. A liner is applied to the exposed magnetic layers to form protected magnetic layers. A second magnetic stack etch forms a magnetic random access memory (MRAM) cell, where the liner prevents shunting between the protected magnetic layers.

Abstract translation: 形成存储器件的制造方法包括在磁性堆叠上形成硬掩模。 执行第一磁栈蚀刻以形成暴露的磁性层。 将衬垫施加到暴露的磁性层以形成受保护的磁性层。 第二磁栈蚀刻形成磁性随机存取存储器（MRAM）单元，其中衬垫防止受保护的磁层之间的分流。