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公开(公告)号:US20190096878A1
公开(公告)日:2019-03-28
申请号:US16094222
申请日:2017-05-24
Applicant: DENSO CORPORATION
Inventor: Takafumi ARAKAWA , Shigeki TAKAHASHI
IPC: H01L27/06 , H01L29/06 , H01L29/10 , H01L29/32 , H01L29/739
Abstract: semiconductor device has a semiconductor substrate including an IGBT region operating as an IGBT provided by an emitter layer, a base layer, a drift layer and a collector layer, and a diode region operating as a diode and provided by an anode layer, the drift layer and a cathode layer. The semiconductor substrate further includes a guard ring of a second conduction type, provided in a surface layer of the drift layer in a peripheral region surrounding a device region where the IGBT region and the diode region are adjacent to each other. The cathode layer and the guard ring are positioned such as to satisfy L/d≥1.5, where L is a minimum value of a distance between the cathode layer and the guard ring as projected to a plane parallel to a surface of the semiconductor substrate, and d is a thickness of the semiconductor substrate.
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公开(公告)号:US20170131344A1
公开(公告)日:2017-05-11
申请号:US15318035
申请日:2015-06-23
Applicant: DENSO CORPORATION
Inventor: Masanori MIYATA , Takafumi ARAKAWA
IPC: G01R31/26
CPC classification number: G01R31/2633 , G01R31/2617 , G01R31/2621 , G01R31/2884 , G01R31/3004 , G01R31/31924 , G01R31/3277
Abstract: A circuit for inspecting a semiconductor device includes: the semiconductor device that is an object to be inspected and includes a diode; a protection element that is connected in series with the semiconductor device and includes a protection diode having higher breakdown resistance than the diode; a switch that includes a switching element connected in series with the semiconductor device and the protection element; and a coil that provides a loop path together with the semiconductor device and the protection element when the switching element is turned off. Even when the semiconductor device including the diode is broken, an inspection device is restricted from being damaged.
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