公开(公告)号：US20170131344A1

公开(公告)日：2017-05-11

申请号：US15318035

申请日：2015-06-23

Applicant: DENSO CORPORATION

Inventor： Masanori MIYATA ,  Takafumi ARAKAWA

IPC: G01R31/26

CPC classification number: G01R31/2633 ,  G01R31/2617 ,  G01R31/2621 ,  G01R31/2884 ,  G01R31/3004 ,  G01R31/31924 ,  G01R31/3277

Abstract: A circuit for inspecting a semiconductor device includes: the semiconductor device that is an object to be inspected and includes a diode; a protection element that is connected in series with the semiconductor device and includes a protection diode having higher breakdown resistance than the diode; a switch that includes a switching element connected in series with the semiconductor device and the protection element; and a coil that provides a loop path together with the semiconductor device and the protection element when the switching element is turned off. Even when the semiconductor device including the diode is broken, an inspection device is restricted from being damaged.

公开(公告)号：US20190333987A1

公开(公告)日：2019-10-31

申请号：US16504858

申请日：2019-07-08

Applicant: DENSO CORPORATION

Inventor： Masanori MIYATA ,  Shigeki TAKAHASHI ,  Masakiyo SUMITOMO ,  Tomofusa SHIGA

IPC: H01L29/06 ,  H01L29/10 ,  H01L29/08 ,  H01L29/40 ,  H01L29/739

Abstract: A semiconductor device has an element part and an outer peripheral part, and a deep layer is formed in the outer peripheral part more deeply than a base layer. When a position of the deep layer closest to the element part is defined as a boundary position, a distance between the boundary position and a position closest to the outer peripheral part in an emitter region is defined as a first distance, and a distance between the boundary position and a position of an end of a collector layer is defined as a second distance, the first distance and the second distance are adjusted such that a carrier density in the outer peripheral part is lowered based on breakdown voltage in the outer peripheral part lowered by the deep layer.

公开(公告)号：US20250105081A1

公开(公告)日：2025-03-27

申请号：US18894482

申请日：2024-09-24

Applicant: DENSO CORPORATION

Inventor： Keita FUKUTANI ,  Masanori MIYATA

IPC: H01L23/34 ,  G01K3/00 ,  H01L23/00 ,  H01L23/31 ,  H01L23/473

Abstract: A semiconductor device includes: a semiconductor substrate having an active region and an outer peripheral region in which a voltage withstanding structure is formed to surround the active region; a temperature sensor configured to detect a temperature of the semiconductor substrate in the outer peripheral region; and a conductive spacer disposed on the active region. The temperature sensor is positioned not to overlap the conductive spacer in the thickness direction. The temperature sensor is positioned closer to a center of the semiconductor substrate in an orthogonal direction perpendicular to the thickness direction than the voltage withstanding structure is.

公开(公告)号：US20230037409A1

公开(公告)日：2023-02-09

申请号：US17972945

申请日：2022-10-25

Applicant: DENSO CORPORATION

Inventor： Masanori MIYATA ,  Shuji YONEDA ,  Masaru SENOO ,  Yuki YAKUSHIGAWA

IPC: H01L27/06 ,  H01L29/739 ,  H01L29/861 ,  H01L29/08

Abstract: In a semiconductor device, a semiconductor substrate has an IGBT region and a FWD, and includes a first conductivity type drift layer, a second conductivity type base layer disposed on the drift layer, a second conductivity type collector layer disposed opposite to the base layer with respect to the drift layer in the IGBT region, and a first conductivity type cathode layer disposed opposite to the base layer with respect to the drift layer in the FWD region. The collector layer includes an extension portion that covers only a part of the cathode layer on a side adjacent to the drift layer. Alternatively, the collector layer includes an extension portion that entirely covers a region of the cathode layer adjacent to the drift layer, and has an area density of 3.5×1012 cm−2 or less.

公开(公告)号：US20180172752A1

公开(公告)日：2018-06-21

申请号：US15735356

申请日：2016-06-09

Applicant: DENSO CORPORATION

Inventor： Masanori MIYATA ,  Yoshifumi OKABE

IPC: G01R31/26 ,  G01R31/28

CPC classification number: G01R31/2601 ,  G01R31/2633 ,  G01R31/2886

Abstract: A semiconductor element test apparatus includes a first switch having a switching element, a coil, a second switch, a semiconductor element, a first rectifying element, and a second rectifying element. The first switch, the coil, and the second switch are connected in series to a power source. The semiconductor element is disposed to configure a loop path along with the coil and the second switch when the switching element is switched off. The semiconductor element has a diode element. A cathode electrode of the diode element is connected to a positive electrode of the power source. The second rectifying element is connected to the first rectifying element in series, and has a rectification direction opposite to a rectification direction of the first rectifying element. The first rectifying element and the second rectifying element configure, along with the coil, another loop path which is different from the loop path.