公开(公告)号：US20230125063A1

公开(公告)日：2023-04-20

申请号：US18065916

申请日：2022-12-14

Applicant: DENSO CORPORATION

Inventor： Seiji NOMA ,  Tomofusa SHIGA ,  Kouji SENDA ,  Tsuyoshi NISHIWAKI ,  Yuta FURUMURA ,  Akitaka SOENO

IPC: H01L29/47 ,  H01L27/06 ,  H01L29/739 ,  H01L29/872 ,  H01L29/40

Abstract: A semiconductor device includes a semiconductor substrate and a metal film. The metal film is located on the semiconductor substrate. The metal film includes a portion to have a Schottky junction with the semiconductor substrate. The metal film is made of an aluminum alloy in which an element is added to aluminum. The metal film includes a lower metal layer and an upper metal layer. The lower metal layer is located on the semiconductor substrate. The upper metal layer stacks on the lower metal layer. The lower metal layer has a thickness of 2.6 micrometers or less in a stacking direction of the lower metal layer and the upper metal layer.

公开(公告)号：US20220149190A1

公开(公告)日：2022-05-12

申请号：US17583426

申请日：2022-01-25

Applicant: DENSO CORPORATION

Inventor： Satoshi KUWANO ,  Tsuyoshi NISHIWAKI ,  Yuta FURUMURA

IPC: H01L29/739 ,  H01L27/06 ,  H01L29/10 ,  H01L29/861 ,  H01L29/66

Abstract: A semiconductor device includes: a semiconductor substrate; a trench gate portion on the semiconductor substrate; a surface electrode covering an upper side of the semiconductor substrate; and an interlayer insulating film insulating the trench gate portion from the surface electrode. The semiconductor substrate includes: a drift region; a body region above the drift region; a barrier region below at least a part of the body region; and a pillar region extending from the surface of the semiconductor substrate to the barrier region and in Schottky contact with the surface electrode. The interlayer insulating film has an acute angle between a top surface and a side surface thereof.