公开(公告)号：US20120299142A1

公开(公告)日：2012-11-29

申请号：US13558790

申请日：2012-07-26

申请人： Daiji KANEMATSU ,  Takeyuki SEKIMOTO ,  Shigeo YATA ,  Akira TERAKAWA

发明人： Daiji KANEMATSU ,  Takeyuki SEKIMOTO ,  Shigeo YATA ,  Akira TERAKAWA

IPC分类号： H01L31/0236

CPC分类号： H01L31/022483 ,  H01L31/02366 ,  H01L31/1888 ,  Y02E10/50

摘要： Disclosed is a photoelectric conversion device provided with transparent electrodes having high electric conductivity, low optical absorptance, and capable of obtaining a high light scattering effect. A first transparent electrode layer (22a), formed on the substrate (20) side, and a second transparent electrode layer (22b), formed at a position farther away from the substrate (20) than the first transparent electrode layer (22a) and having a density less than that of the first transparent electrode layer (22a), are formed as a transparent electrode layer (22), and a textured structure is provided.

摘要翻译： 公开了一种具有导电性高，光吸收率低的透明电极的光电转换装置，能够得到高散射效果。 形成在基板（20）侧的第一透明电极层（22a）和形成在比第一透明电极层（22a）更远离基板（20）的位置处的第二透明电极层（22b），以及 形成密度小于第一透明电极层（22a）的密度的透明电极层（22），并且提供纹理结构。

公开(公告)号：US20110104849A1

公开(公告)日：2011-05-05

申请号：US12987245

申请日：2011-01-10

申请人： Akira TERAKAWA

发明人： Akira TERAKAWA

IPC分类号： H01L31/18

CPC分类号： H01L31/20 ,  H01L31/0352 ,  H01L31/075 ,  H01L31/202 ,  Y02E10/548 ,  Y02P70/521

摘要： A photovoltaic device capable of improving an output characteristic is provided. The photovoltaic device includes an n-type single-crystal silicon substrate, a p-type amorphous silicon substrate, and a substantially intrinsic i-type amorphous silicon layer disposed between the n-type single-crystal silicon substrate and the p-type amorphous silicon layer. The i-type amorphous silicon layer includes: a first section which is located on the n-type single-crystal silicon substrate side, and which has an oxygen concentration equal to or below 1020 cm−3; and a second section which is located on the p-type amorphous silicon layer side, and which has an oxygen concentration equal to or above 1020 cm−3.

摘要翻译： 提供能够提高输出特性的光电装置。 光电器件包括n型单晶硅衬底，p型非晶硅衬底和设置在n型单晶硅衬底和p型非晶硅之间的基本上本征的i型非晶硅层 层。 i型非晶硅层包括：第一部分，其位于n型单晶硅衬底侧，氧浓度等于或低于1020cm-3; 以及第二部分，其位于p型非晶硅层侧，氧浓度等于或大于1020cm-3。

公开(公告)号：US20080230121A1

公开(公告)日：2008-09-25

申请号：US12045247

申请日：2008-03-10

申请人： Akira TERAKAWA

发明人： Akira TERAKAWA

IPC分类号： H01L31/0256 ,  H01L31/18

CPC分类号： H01L31/20 ,  H01L31/0352 ,  H01L31/075 ,  H01L31/202 ,  Y02E10/548 ,  Y02P70/521

摘要： A photovoltaic device capable of improving an output characteristic is provided. The photovoltaic device includes an n-type single-crystal silicon substrate, a p-type amorphous silicon substrate, and a substantially intrinsic i-type amorphous silicon layer disposed between the n-type single-crystal silicon substrate and the p-type amorphous silicon layer. The i-type amorphous silicon layer includes: a first section which is located on the n-type single-crystal silicon substrate side, and which has an oxygen concentration equal to or below 1020 cm−3; and a second section which is located on the p-type amorphous silicon layer side, and which has an oxygen concentration equal to or above 1020 cm−3.

摘要翻译： 提供能够提高输出特性的光电装置。 光电器件包括n型单晶硅衬底，p型非晶硅衬底和设置在n型单晶硅衬底和p型非晶硅之间的基本上本征的i型非晶硅层 层。 i型非晶硅层包括：位于n型单晶硅衬底侧的第一部分，其氧浓度等于或低于20℃， -3 ; 以及第二部分，其位于p型非晶硅层侧，并且其氧浓度等于或高于20℃至30℃。