公开(公告)号：US20130320286A1

公开(公告)日：2013-12-05

申请号：US13905822

申请日：2013-05-30

Applicant: Dong-soo LEE ,  Myoung-jae LEE ,  U-in CHUNG

Inventor： Dong-soo LEE ,  Myoung-jae LEE ,  U-in CHUNG

IPC: H01L45/00

CPC classification number: H01L45/145 ,  H01L27/2427 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/14 ,  H01L45/146 ,  H01L45/1625 ,  H01L45/1641

Abstract: A switching element includes: a first electrode; a second electrode; and a silicon-containing chalconitride layer between the first electrode and the second electrode. A switching device includes: a threshold switch material layer between a first electrode and a second electrode. The threshold switch material layer includes a cationic metal element, a chalcogen element, a silicon element and a nitrogen element. A memory device include: a plurality of first wirings arranged in parallel with each other; a plurality of second wirings crossing the first wirings, and arranged in parallel with each other; and a memory cell formed at each intersection of the plurality of first wirings and the plurality of second wirings. The memory cell includes a laminate having a silicon-containing chalconitride layer, an intermediate electrode, and a memory layer.

Abstract translation: 开关元件包括：第一电极; 第二电极; 以及在所述第一电极和所述第二电极之间的含硅的仲氮化物层。 开关装置包括：第一电极和第二电极之间的阈值开关材料层。 阈值开关材料层包括阳离子金属元素，硫属元素，硅元素和氮元素。 存储器件包括：彼此平行布置的多个第一布线; 多个第二布线，穿过第一配线，彼此平行布置; 以及形成在所述多个第一布线和所述多个第二布线的每个交叉点处的存储单元。 存储单元包括具有含硅的恰氮氮化物层，中间电极和存储层的层压体。

公开(公告)号：US20130119349A1

公开(公告)日：2013-05-16

申请号：US13667097

申请日：2012-11-02

Applicant: Hyun-jong CHUNG ,  U-in CHUNG ,  Ki-nam KIM

Inventor： Hyun-jong CHUNG ,  U-in CHUNG ,  Ki-nam KIM

IPC: H01L29/772 ,  H01L21/8232

CPC classification number: H01L29/772 ,  B82Y40/00 ,  H01L21/8232 ,  H01L27/0688 ,  H01L29/1606 ,  H01L29/41758 ,  H01L29/518 ,  H01L29/778 ,  H01L29/78606 ,  H01L29/78684 ,  Y10S977/734 ,  Y10S977/842 ,  Y10S977/938

Abstract: A graphene transistor includes: a gate electrode on a substrate; a gate insulating layer on the gate electrode; a graphene channel on the gate insulating layer; a source electrode and a drain electrode on the graphene channel, the source and drain electrode being separate from each other; and a cover that covers upper surfaces of the source electrode and the drain electrode and forms an air gap above the graphene channel between the source electrode and the drain electrode.

Abstract translation: 石墨烯晶体管包括：基板上的栅电极; 栅电极上的栅极绝缘层; 栅极绝缘层上的石墨烯通道; 在石墨烯通道上的源极和漏极，源极和漏极彼此分离; 以及覆盖源电极和漏电极的上表面并在源电极和漏电极之间的石墨烯通道上方形成气隙的盖。

公开(公告)号：US20130241520A1

公开(公告)日：2013-09-19

申请号：US13588488

申请日：2012-08-17

Applicant: Ho-jung KIM ,  Jai-kwang SHIN ,  U-in CHUNG ,  Hyun-sik CHOI

Inventor： Ho-jung KIM ,  Jai-kwang SHIN ,  U-in CHUNG ,  Hyun-sik CHOI

IPC: G05F3/02

CPC classification number: H03K17/687 ,  H01L21/8213 ,  H01L21/8252 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/7787 ,  H02M1/08 ,  H02M3/337 ,  H03K2217/0036 ,  H03K2217/0063 ,  H03K2217/0072 ,  H03K2217/0081

Abstract: A power management chip and a power management device including the power management chip. The power management chip includes at least one power switch and a driver unit for generating a driving signal for driving the at least one power switch, the driver unit including one or more circuit units formed on a same substrate as the at least one power switch.

Abstract translation: 电源管理芯片和包括电源管理芯片的电源管理装置。 电源管理芯片包括至少一个电源开关和驱动器单元，用于产生用于驱动至少一个电源开关的驱动信号，所述驱动器单元包括形成在与所述至少一个电源开关相同的基板上的一个或多个电路单元。