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公开(公告)号：US20170133607A1
公开(公告)日：2017-05-11
申请号：US15409555
申请日：2017-01-19
申请人： E Ink Holdings Inc.
发明人： Cheng-Hang Hsu , Henry Wang , Chih-Hsuan Wang , Ted-Hong Shinn
CPC分类号： H01L51/0545 , H01L29/495 , H01L51/0541 , H01L51/105
摘要： A transistor structure disposed on a substrate includes a gate electrode, an organic semiconductor layer, a gate insulation layer and a patterned metal layer. The gate insulation layer is disposed between the gate and the organic semiconductor layer. The patterned metal layer has a conductive oxidation surface and is divided into a source electrode and a drain electrode. A portion of the organic semiconductor layer is exposed between the source electrode and the drain electrode. The conductive oxidation surface directly contacts with the organic semiconductor layer.
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公开(公告)号：US09000932B2
公开(公告)日：2015-04-07
申请号：US13742374
申请日：2013-01-16
申请人： E Ink Holdings Inc.
发明人： Chih-Hsuan Wang , Chia-Chun Yeh , Ted-Hong Shinn
CPC分类号： G01N27/048 , G01K7/01 , G01K7/16 , G01N27/121
摘要： An electric apparatus including a display and a process unit is provided. The display has an active area and a peripheral area. The display panel including an active device array substrate, an opposite substrate opposite to the active device array substrate and a display medium between the active device array substrate and the opposite substrate. The active device array substrate has a plurality of active devices disposed in the active area and a humidity sensor disposed in the peripheral area. The humidity sensor is a thin film transistor having a metal oxide semiconductor layer. The process unit is electrically connected to the humidity sensor. The process unit calculates a humidity value according to a sensing current from the humidity sensor.
摘要翻译： 提供一种包括显示器和处理单元的电气设备。 显示器具有活动区域和外围区域。 显示面板包括有源器件阵列衬底，与有源器件阵列衬底相对的相对衬底和在有源器件阵列衬底和相对衬底之间的显示介质。 有源器件阵列衬底具有设置在有源区域中的多个有源器件和设置在周边区域中的湿度传感器。 湿度传感器是具有金属氧化物半导体层的薄膜晶体管。 处理单元电连接到湿度传感器。 处理单元根据来自湿度传感器的感测电流来计算湿度值。
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公开(公告)号：US09443986B2
公开(公告)日：2016-09-13
申请号：US14195863
申请日：2014-03-04
申请人： E Ink Holdings Inc.
发明人： Chih-Hsuan Wang , Chia-Chun Yeh , Ted-Hong Shinn
IPC分类号： H01L29/10 , H01L29/786 , H01L29/26
CPC分类号： H01L29/7869 , H01L29/26
摘要： A thin file transistor includes a gate electrode, a source electrode, a drain electrode, a gate-insulating layer, and an oxide semiconductor layer. The oxide semiconductor layer includes indium-gallium-zinc oxide with a formula of InxGayZnzOw, in which x, y and z satisfy the following formulas 1.5≦(y/x)≦2 and 1.5≦(y/z)≦2. The gate-insulating layer is positioned between the gate electrode and the oxide semiconductor layer. The source electrode and the drain electrode are respectively connected to two different sides of the oxide semiconductor layer.
摘要翻译： 薄文件晶体管包括栅电极，源电极，漏电极，栅极绝缘层和氧化物半导体层。 氧化物半导体层包括具有InxGayZnzOw式的铟镓锌氧化物，其中x，y和z满足下式1.5≤（y / x）≤2和1.5≤（y / z）≤2。 栅极绝缘层位于栅电极和氧化物半导体层之间。 源电极和漏电极分别连接到氧化物半导体层的两个不同侧。
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公开(公告)号：US20150137092A1
公开(公告)日：2015-05-21
申请号：US14476753
申请日：2014-09-04
申请人： E Ink Holdings Inc.
发明人： Cheng-Hang Hsu , Henry Wang , Chih-Hsuan Wang , Ted-Hong Shinn
CPC分类号： H01L51/0545 , H01L29/495 , H01L51/0541 , H01L51/105
摘要： A transistor structure disposed on a substrate includes a gate electrode, an organic semiconductor layer, a gate insulation layer and a patterned metal layer. The gate insulation layer is disposed between the gate and the organic semiconductor layer. The patterned metal layer has a conductive oxidation surface and is divided into a source electrode and a drain electrode. A portion of the organic semiconductor layer is exposed between the source electrode and the drain electrode. The conductive oxidation surface directly contacts with the organic semiconductor layer.
摘要翻译： 设置在基板上的晶体管结构包括栅电极，有机半导体层，栅绝缘层和图案化金属层。 栅极绝缘层设置在栅极和有机半导体层之间。 图案化的金属层具有导电氧化表面，并被分为源电极和漏电极。 有机半导体层的一部分在源电极和漏电极之间露出。 导电氧化表面直接与有机半导体层接触。
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公开(公告)号：US20130265166A1
公开(公告)日：2013-10-10
申请号：US13742374
申请日：2013-01-16
申请人： E INK HOLDINGS INC.
发明人： Chih-Hsuan Wang , Chia-Chun Yeh , Ted-Hong Shinn
CPC分类号： G01N27/048 , G01K7/01 , G01K7/16 , G01N27/121
摘要： An electric apparatus including a display and a process unit is provided. The display has an active area and a peripheral area. The display panel including an active device array substrate, an opposite substrate opposite to the active device array substrate and a display medium between the active device array substrate and the opposite substrate. The active device array substrate has a plurality of active devices disposed in the active area and a humidity sensor disposed in the peripheral area. The humidity sensor is a thin film transistor having a metal oxide semiconductor layer. The process unit is electrically connected to the humidity sensor. The process unit calculates a humidity value according to a sensing current from the humidity sensor.
摘要翻译： 提供一种包括显示器和处理单元的电气设备。 显示器具有活动区域和外围区域。 显示面板包括有源器件阵列衬底，与有源器件阵列衬底相对的相对衬底和在有源器件阵列衬底和相对衬底之间的显示介质。 有源器件阵列衬底具有设置在有源区域中的多个有源器件和设置在周边区域中的湿度传感器。 湿度传感器是具有金属氧化物半导体层的薄膜晶体管。 处理单元电连接到湿度传感器。 处理单元根据来自湿度传感器的感测电流来计算湿度值。
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公开(公告)号：US09825140B2
公开(公告)日：2017-11-21
申请号：US14825187
申请日：2015-08-13
申请人： E Ink Holdings Inc.
发明人： Chia-Chun Yeh , Henry Wang , Xue-Hung Tsai , Chih-Hsuan Wang
IPC分类号： H01L29/49 , H01L29/417 , H01L29/786
CPC分类号： H01L29/41733 , H01L29/7869
摘要： A metal oxide thin film transistor (TFT) includes a gate electrode, a gate insulating layer, a metal oxide active layer, a source electrode, and a drain electrode. The gate electrode is formed on a substrate. The gate insulating layer is formed on the substrate and covers the gate electrode. The metal oxide active layer is formed on the gate insulating layer. The drain electrode and the source electrode are formed on two opposite ends of the metal oxide active layer in a spaced-apart manner, in which at least one of the orthographic projection of the source electrode and the orthographic projection of the drain electrode on the substrate does not overlap the gate electrode.
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公开(公告)号：US08754411B2
公开(公告)日：2014-06-17
申请号：US13726652
申请日：2012-12-26
申请人： E Ink Holdings Inc.
发明人： Chih-Hsuan Wang , Chia-Chun Yeh , Ted-Hong Shinn
IPC分类号： H01L29/78
CPC分类号： H01L29/78693 , H01L29/7869
摘要： An active device is disposed on a substrate. The active device includes a metal layer, a semiconductor channel layer, an insulating layer, a source and a drain. The metal layer has a metal oxide surface away from the substrate. The insulating layer is disposed between the metal layer and the semiconductor channel layer. The source and the drain are disposed at one side of the semiconductor channel layer. A portion of the semiconductor channel layer is exposed between the source and the drain. An orthogonal projection of the metal layer on the substrate at least covers an orthogonal projection of the portion of the semiconductor channel layer exposed by the source and the drain on the substrate.
摘要翻译： 有源器件设置在衬底上。 有源器件包括金属层，半导体沟道层，绝缘层，源极和漏极。 金属层具有远离基板的金属氧化物表面。 绝缘层设置在金属层和半导体沟道层之间。 源极和漏极设置在半导体沟道层的一侧。 半导体沟道层的一部分暴露在源极和漏极之间。 金属层在基板上的正交投影至少覆盖由衬底上的源极和漏极暴露的半导体沟道层的部分的正交投影。
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公开(公告)号：US20130256655A1
公开(公告)日：2013-10-03
申请号：US13726652
申请日：2012-12-26
申请人： E INK HOLDINGS INC.
发明人： Chih-Hsuan Wang , Chia-Chun Yeh , Ted-Hong Shinn
IPC分类号： H01L29/786
CPC分类号： H01L29/78693 , H01L29/7869
摘要： An active device is disposed on a substrate. The active device includes a metal layer, a semiconductor channel layer, an insulating layer, a source and a drain. The metal layer has a metal oxide surface away from the substrate. The insulating layer is disposed between the metal layer and the semiconductor channel layer. The source and the drain are disposed at one side of the semiconductor channel layer. A portion of the semiconductor channel layer is exposed between the source and the drain. An orthogonal projection of the metal layer on the substrate at least covers an orthogonal projection of the portion of the semiconductor channel layer exposed by the source and the drain on the substrate.
摘要翻译： 有源器件设置在衬底上。 有源器件包括金属层，半导体沟道层，绝缘层，源极和漏极。 金属层具有远离基板的金属氧化物表面。 绝缘层设置在金属层和半导体沟道层之间。 源极和漏极设置在半导体沟道层的一侧。 半导体沟道层的一部分暴露在源极和漏极之间。 金属层在基板上的正交投影至少覆盖由衬底上的源极和漏极暴露的半导体沟道层的部分的正交投影。
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