公开(公告)号：US12134723B2

公开(公告)日：2024-11-05

申请号：US17737636

申请日：2022-05-05

Applicant: ENF TECHNOLOGY CO., LTD.

Inventor： Tae Ho Kim ,  Jeong Sik Oh ,  Gi Young Kim ,  Myung Ho Lee ,  Myung Geun Song

IPC: C09K13/08 ,  C01B33/20 ,  C07F7/08 ,  H01L21/4757

Abstract: Silicon etching compositions are described and may be used for selectively etching silicon with respect to a silicon insulating film. In particular, the silicon etching compositions can be used to improve the selective etching ratio of silicon from the surface of a semiconductor on which a silicone oxide film and silicon are exposed.

公开(公告)号：US10982144B2

公开(公告)日：2021-04-20

申请号：US16557680

申请日：2019-08-30

Applicant: ENF TECHNOLOGY CO., LTD.

Inventor： Dong Hyun Kim ,  Hyeon Woo Park ,  Jang Woo Cho ,  Tae Ho Kim ,  Myung Ho Lee ,  Myung Geun Song

IPC: H01L21/311 ,  C09K13/06 ,  C09K13/04

Abstract: Provided are a silicon nitride layer etching composition, and more specifically, a silicon nitride layer etching composition, capable of etching the silicon nitride layer at a high selectivity ratio relative to a silicon oxide layer by comprising a polysilicon compound in the etching composition, an etching method of a silicon nitride layer using the same, and a method of manufacturing a semiconductor device.

公开(公告)号：US12134724B2

公开(公告)日：2024-11-05

申请号：US17739489

申请日：2022-05-09

Applicant: ENF TECHNOLOGY CO., LTD.

Inventor： Jeong Sik Oh ,  Tae Ho Kim ,  Gi Young Kim ,  Myung Ho Lee ,  Myung Geun Song

IPC: C09K13/08

Abstract: Silicon etching compositions are described and may be used for selectively etching silicon with respect to a silicon insulating film. In particular, the silicon etching compositions can be used to improve the selective etching ratio of silicon from the surface of a semiconductor on which a silicone oxide film and silicon are exposed.