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公开(公告)号：US11220659B2
公开(公告)日：2022-01-11
申请号：US16555183
申请日：2019-08-29
Applicant: ENF TECHNOLOGY CO., LTD.
Inventor： Du Won Lee , Sang Dae Lee , Myung Ho Lee , Myung Geun Song
IPC: C11D7/50 , G03F7/42 , H01L21/027 , C11D11/00
Abstract: A thinner composition is capable of reducing the amount of photoresist used in a reducing resist consumption (RRC) coating process, an edge bead removed (EBR) process or the like, and removing unnecessary photoresist on an edge portion or a backside portion of the wafer. The thinner composition includes C1-C10 alkyl C1-C10 alkoxy propionate, propylene glycol C1-C10 alkyl ether, and propylene glycol C1-C10 alkyl ether acetate.
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公开(公告)号：US12134723B2
公开(公告)日：2024-11-05
申请号：US17737636
申请日：2022-05-05
Applicant: ENF TECHNOLOGY CO., LTD.
Inventor： Tae Ho Kim , Jeong Sik Oh , Gi Young Kim , Myung Ho Lee , Myung Geun Song
IPC: C09K13/08 , C01B33/20 , C07F7/08 , H01L21/4757
Abstract: Silicon etching compositions are described and may be used for selectively etching silicon with respect to a silicon insulating film. In particular, the silicon etching compositions can be used to improve the selective etching ratio of silicon from the surface of a semiconductor on which a silicone oxide film and silicon are exposed.
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公开(公告)号：US11091695B2
公开(公告)日：2021-08-17
申请号：US16855864
申请日：2020-04-22
Applicant: ENF TECHNOLOGY CO., LTD.
Inventor： Hye Hee Lee , Hyeon Woo Park , Myung Ho Lee , Myung Geun Song
IPC: C09K13/06
Abstract: Provided are an etching composition and an etching method using the same, and more particularly, an etching composition for selectively etching a metal nitride film, an etching method of the metal nitride film using the same, and a method of manufacturing a microelectronic device including a process performed using the same.
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公开(公告)号：US10982144B2
公开(公告)日：2021-04-20
申请号：US16557680
申请日：2019-08-30
Applicant: ENF TECHNOLOGY CO., LTD.
Inventor： Dong Hyun Kim , Hyeon Woo Park , Jang Woo Cho , Tae Ho Kim , Myung Ho Lee , Myung Geun Song
IPC: H01L21/311 , C09K13/06 , C09K13/04
Abstract: Provided are a silicon nitride layer etching composition, and more specifically, a silicon nitride layer etching composition, capable of etching the silicon nitride layer at a high selectivity ratio relative to a silicon oxide layer by comprising a polysilicon compound in the etching composition, an etching method of a silicon nitride layer using the same, and a method of manufacturing a semiconductor device.
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公开(公告)号：US12134724B2
公开(公告)日：2024-11-05
申请号：US17739489
申请日：2022-05-09
Applicant: ENF TECHNOLOGY CO., LTD.
Inventor： Jeong Sik Oh , Tae Ho Kim , Gi Young Kim , Myung Ho Lee , Myung Geun Song
IPC: C09K13/08
Abstract: Silicon etching compositions are described and may be used for selectively etching silicon with respect to a silicon insulating film. In particular, the silicon etching compositions can be used to improve the selective etching ratio of silicon from the surface of a semiconductor on which a silicone oxide film and silicon are exposed.
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Patent Agency Ranking
公开(公告)号：US11926807B2
公开(公告)日：2024-03-12
申请号：US17447640
申请日：2021-09-14
Applicant: ENF TECHNOLOGY CO., LTD.
Inventor： Jun Her , Na Rae Yim , Hyun Jin Jung , Myung Ho Lee , Myung Geun Song
CPC classification number: C11D11/0047 , C11D3/0073 , C11D3/04 , C11D3/046 , C11D3/28 , C11D3/30 , C11D3/43
Abstract: A cleaning composition for removing post-etch or post-ash residues from a semiconductor substrate, and a cleaning method using the same are disclosed. The cleaning composition can comprise water; a fluorine compound; an alkanolamine compound; and a corrosion inhibitor. The corrosion inhibitor is a mixture of a first corrosion inhibitor and a second corrosion inhibitor. When using the cleaning composition, it is possible to efficiently remove the residues of various aspects existing on a surface of the substrate or the semiconductor device without damage to a substrate or a semiconductor device including various metal layers, insulating layers, etc. Accordingly, when a highly integrated and miniaturized semiconductor device is manufactured, it may be advantageously applied to the removal of residues generated on the surface of the substrate or the semiconductor device.
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公开(公告)号：US12031077B2
公开(公告)日：2024-07-09
申请号：US17805332
申请日：2022-06-03
Applicant: ENF TECHNOLOGY CO., LTD.
Inventor： Hyeon Woo Park , Seok Hyeon Nam , Myung Ho Lee , Myung Geun Song
IPC: C09K13/10 , C09K13/00 , C09K13/04 , C23F1/00 , C23F1/14 , C23F1/16 , C23F1/44 , H01L21/306 , H01L21/3213
CPC classification number: C09K13/10 , C09K13/00 , C09K13/04 , C23F1/00 , C23F1/14 , C23F1/16 , C23F1/44 , H01L21/30604 , H01L21/32134
Abstract: The present disclosure provides an etching composition for a metal nitride layer and an etching method of a metal nitride layer using the same, and more particularly, to an etching composition for a metal nitride layer selectively etching the metal nitride layer, an etching method of a metal nitride layer using the etching composition, and a method of manufacturing a microelectronic device, the method including an etching process performed using the etching composition.
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公开(公告)号：US11987740B2
公开(公告)日：2024-05-21
申请号：US17446408
申请日：2021-08-30
Applicant: ENF TECHNOLOGY CO., LTD.
Inventor： Dong Hyun Kim , Hyeon Woo Park , Sung Jun Hong , Myung Ho Lee , Myung Geun Song , Hoon Sik Kim , Jae Jung Ko , Myong Euy Lee , Jun Hyeok Hwang
IPC: C09K13/06 , H01L21/311
CPC classification number: C09K13/06 , H01L21/31111
Abstract: Provided are a silicon nitride film etching composition, a method of etching a silicon nitride film using the same, and a manufacturing method of a semiconductor device. Specifically, a silicon nitride film may be highly selectively etched as compared with a silicon oxide film, and when the composition is applied to an etching process at a high temperature and a semiconductor manufacturing process, not only no precipitate occurs but also anomalous growth in which the thickness of the silicon oxide film is rather increased does not occur, thereby minimizing defects and reliability reduction.
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公开(公告)号：US11939505B2
公开(公告)日：2024-03-26
申请号：US17446414
申请日：2021-08-30
Applicant: ENF TECHNOLOGY CO., LTD.
Inventor： Dong Hyun Kim , Hyeon Woo Park , Sung Jun Hong , Myung Ho Lee , Myung Geun Song , Hoon Sik Kim , Jae Jung Ko , Myong Euy Lee , Jun Hyeok Hwang
IPC: C09K13/06 , C23F1/02 , C23F1/44 , H01L21/3213
CPC classification number: C09K13/06 , C23F1/02 , C23F1/44 , H01L21/32134
Abstract: Provided are a silicon nitride film etching composition, a method of etching a silicon nitride film using the same, and a manufacturing method of a semiconductor device. Specifically, a silicon nitride film may be stably etched with a high selection ratio relative to a silicon oxide film, and when the composition is applied to an etching process at a high temperature and a semiconductor manufacturing process, not only no precipitate occurs but also anomalous growth in which the thickness of the silicon oxide film is rather increased does not occur, thereby minimizing defects and reliability reduction.
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公开(公告)号：US11149201B2
公开(公告)日：2021-10-19
申请号：US16416089
申请日：2019-05-17
Applicant: ENF TECHNOLOGY CO., LTD.
Inventor： Dong Hyun Kim , Hyeon Woo Park , Du Won Lee , Jang Woo Cho , Myung Ho Lee , Myung Geun Song
IPC: C09K13/06 , H01L21/311 , C09K13/08
Abstract: Provided is a silicon nitride layer etching composition, and more specifically, a silicon nitride layer etching composition including two different silicon-based compounds in an etching composition to be capable of selectively etching a silicon nitride layer relative to a silicon oxide layer with a remarkable etch selectivity ratio and providing remarkable effects of suppressing generation of precipitates and reducing the abnormal growth of other layers existing in the vicinity, including the silicon oxide layer when the silicon nitride layer etching composition is used for an etching process and a semiconductor manufacturing process.
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