公开(公告)号：US20230287574A1

公开(公告)日：2023-09-14

申请号：US18156969

申请日：2023-01-19

Applicant: ENF TECHNOLOGY CO., LTD.

Inventor： Sang Seung PARK ,  Yang Ryoung KIM ,  Bo Yeon LEE ,  Min Gyeong JEONG ,  Se Hoon KIM

IPC: C23F1/40 ,  H01L21/3213 ,  H01L21/3205 ,  H01L21/02

CPC classification number: C23F1/40 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/32051 ,  H01L21/32134

Abstract: Provided are an etchant composition for a titanium-containing metal layer, and a method using the same, which may selectively etch the titanium-containing metal layer without affecting the quality of other films during a process of manufacturing semiconductor and display devices, and thus, may increase productivity and reliability with improved etching characteristics in a semiconductor manufacturing process.

公开(公告)号：US20230017238A1

公开(公告)日：2023-01-19

申请号：US17844107

申请日：2022-06-20

Applicant: ENF TECHNOLOGY CO., LTD.

Inventor： Hye Ji KIM ,  Jin Ho YOU ,  Namgi CHO

IPC: C09K13/00 ,  C09K15/30 ,  G03F7/42

Abstract: The present invention relates to a stripper composition for removing a photoresist in a process of manufacturing a semiconductor device.
According to the present invention, it is possible to prevent corrosion of the underlying film while improving the peeling force for the photoresist, and to improve the stability of the composition over time.

公开(公告)号：US20220403243A1

公开(公告)日：2022-12-22

申请号：US17739489

申请日：2022-05-09

Applicant: ENF TECHNOLOGY CO., LTD.

Inventor： Jeong Sik OH ,  Tae Ho KIM ,  Gi Young KIM ,  Myung Ho LEE ,  Myung Geun SONG

IPC: C09K13/08

Abstract: The present invention relates to a silicon etching composition, and to a composition for selectively etching silicon with respect to a silicon insulating film.
The etching composition according to the present invention can improve the selective etching ratio of silicon from the surface of the semiconductor on which a silicone oxide film and silicon are exposed.

公开(公告)号：US20220380670A1

公开(公告)日：2022-12-01

申请号：US17737636

申请日：2022-05-05

Applicant: ENF TECHNOLOGY CO., LTD.

Inventor： Tae Ho KIM ,  Jeong Sik OH ,  Gi Young KIM ,  Myung Ho LEE ,  Myung Geun SONG

IPC: C09K13/08 ,  C07F7/08 ,  C01B33/20

Abstract: The present invention relates to a silicon etching composition, and to a composition for selectively etching silicon with respect to a silicon insulating film.
The etching composition according to the present invention can improve the selective etching ratio of silicon from the surface of the semiconductor on which a silicone oxide film and silicon are exposed.

公开(公告)号：US20220089952A1

公开(公告)日：2022-03-24

申请号：US17446414

申请日：2021-08-30

Applicant: ENF TECHNOLOGY CO., LTD.

Inventor： Dong Hyun KIM ,  Hyeon Woo PARK ,  Sung Jun HONG ,  Myung Ho LEE ,  Myung Geun SONG ,  Hoon Sik KIM ,  Jae Jung KO ,  Myong Euy LEE ,  Jun Hyeok HWANG

IPC: C09K13/06 ,  C23F1/02 ,  C23F1/44 ,  H01L21/3213

Abstract: Provided are a silicon nitride film etching composition, a method of etching a silicon nitride film using the same, and a manufacturing method of a semiconductor device. Specifically, a silicon nitride film may be stably etched with a high selection ratio relative to a silicon oxide film, and when the composition is applied to an etching process at a high temperature and a semiconductor manufacturing process, not only no precipitate occurs but also anomalous growth in which the thickness of the silicon oxide film is rather increased does not occur, thereby minimizing defects and reliability reduction.

公开(公告)号：US20190390110A1

公开(公告)日：2019-12-26

申请号：US16416089

申请日：2019-05-17

Applicant: ENF TECHNOLOGY CO., LTD.

Inventor： Dong Hyun KIM ,  Hyeon Woo PARK ,  Du Won LEE ,  Jang Woo CHO ,  Myung Ho LEE ,  Myung Geun SONG

IPC: C09K13/06 ,  H01L21/311 ,  C09K13/08

Abstract: Provided is a silicon nitride layer etching composition, and more specifically, a silicon nitride layer etching composition including two different silicon-based compounds in an etching composition to be capable of selectively etching a silicon nitride layer relative to a silicon oxide layer with a remarkable etch selectivity ratio and providing remarkable effects of suppressing generation of precipitates and reducing the abnormal growth of other layers existing in the vicinity, including the silicon oxide layer when the silicon nitride layer etching composition is used for an etching process and a semiconductor manufacturing process.

公开(公告)号：US20150147836A1

公开(公告)日：2015-05-28

申请号：US14332215

申请日：2014-07-15

Applicant: Samsung Display Co., Ltd. ,  ENF Technology Co., Ltd

Inventor： In-Bae Kim ,  Jong-Hyun Choung ,  Young Min Moon ,  Hong Sick Park ,  Hyeon Jeong Sang ,  Jae Woo Jeong ,  Min Hee Kim ,  Young Jin Park ,  Sang-Moon Yun ,  Sang Dai Lee ,  Hyun Cheol Jeong

IPC: H01L21/02 ,  H01L27/15

CPC classification number: H01L27/153 ,  C03C23/0075 ,  C11D1/66 ,  C11D3/044 ,  C11D3/046 ,  C11D3/30 ,  C11D3/33 ,  C11D11/0041 ,  H01L21/02052 ,  H01L27/1262

Abstract: The disclosure provides a cleaning agent composition for a flat panel display device, including: polyaminocarboxylic acid; alkali base; a nonionic surfactant; and a fluoride component. The cleaning agent composition for the flat panel display device can effectively remove metal oxides and organic contaminants on the substrate without impairing a transparent conductive layer.

Abstract translation: 本发明提供了一种用于平板显示装置的清洁剂组合物，包括：聚氨基羧酸; 碱碱 非离子表面活性剂; 和氟化物成分。 用于平板显示装置的清洁剂组合物可以有效地去除衬底上的金属氧化物和有机污染物而不损害透明导电层。

公开(公告)号：US12173216B2

公开(公告)日：2024-12-24

申请号：US17660342

申请日：2022-04-22

Applicant: ENF TECHNOLOGY CO., LTD.

Inventor： Jeong Sik Oh ,  Hak Soo Kim ,  Myung Ho Lee

IPC: C09K13/08 ,  H01L21/306

Abstract: Provided is an etchant composition for a semiconductor substrate which may selectively etch a high-concentration doped layer of an extrinsic semiconductor, and according to the present disclosure, an etchant composition for a semiconductor substrate which, in etching an extrinsic semiconductor substrate including doped layers having different doping concentrations, may etch the high-concentration doped layer at a high selection ratio, and suppress bubble formation during an etching process to allow uniform and stable etching, an etching method using the same, and a manufacturing method of a semiconductor substrate may be provided.

公开(公告)号：US12134723B2

公开(公告)日：2024-11-05

申请号：US17737636

申请日：2022-05-05

Applicant: ENF TECHNOLOGY CO., LTD.

Inventor： Tae Ho Kim ,  Jeong Sik Oh ,  Gi Young Kim ,  Myung Ho Lee ,  Myung Geun Song

IPC: C09K13/08 ,  C01B33/20 ,  C07F7/08 ,  H01L21/4757

Abstract: Silicon etching compositions are described and may be used for selectively etching silicon with respect to a silicon insulating film. In particular, the silicon etching compositions can be used to improve the selective etching ratio of silicon from the surface of a semiconductor on which a silicone oxide film and silicon are exposed.

公开(公告)号：US20230212457A1

公开(公告)日：2023-07-06

申请号：US18077499

申请日：2022-12-08

Applicant: ENF TECHNOLOGY CO., LTD.

Inventor： Jeong Sik OH ,  Tae Ho KIM ,  Gi Young KIM ,  Myung Ho LEE ,  Myung Geun SONG

IPC: C09K13/08 ,  H01L21/311

CPC classification number: C09K13/08 ,  H01L21/31111

Abstract: The present invention relates to a composition for selectively etching silicon on a surface on which a metal film and silicon (Si) are exposed.
According to the present invention, it is possible to improve etch selectivity of silicon on the semiconductor surface on which the metal film and silicon are exposed.