公开(公告)号：US20240150614A1

公开(公告)日：2024-05-09

申请号：US18385340

申请日：2023-10-30

Applicant: ENTEGRIS, INC.

Inventor： Tsuyoshi MASUDA ,  Ryuta KUMASHIRO ,  Hironao FUJII ,  Takamasa KANAI ,  Hiroshi KITAMURA ,  Helin HUANG ,  Yoshiyuki MATSUMURA

IPC: C09G1/02 ,  B24B37/04 ,  C09K13/00 ,  C09K13/04 ,  H01L21/306

CPC classification number: C09G1/02 ,  B24B37/044 ,  C09K13/00 ,  C09K13/04 ,  H01L21/30625

Abstract: The invention provides a chemical-mechanical polishing composition comprising: (a) an abrasive particle; (b) an ionic oxidizer; and (c) water, wherein the chemical-mechanical polishing composition has a pH of about 1 to about 7, the abrasive particle has an isoelectric point that is higher than 8, and the ionic oxidizer has a negative charge at the pH of the chemical-mechanical polishing composition. The invention also provides a method of chemically-mechanically polishing a substrate, especially a substrate comprising a silicon carbide layer on a surface of the substrate, using said composition.