公开(公告)号：US10991809B2

公开(公告)日：2021-04-27

申请号：US15777837

申请日：2016-11-22

Applicant: ENTEGRIS, Inc.

Inventor： Steven Bilodeau ,  Emanuel I Cooper

IPC: C09K13/08 ,  H01L21/02 ,  H01L21/04 ,  H01L21/225 ,  H01L21/306 ,  H01L21/311 ,  H01L21/3213 ,  H01L29/49 ,  H01L29/51 ,  H01L29/66

Abstract: A removal composition and process for selectively removing p-doped polysilicon (e.g., boron-doped polysilicon) relative to silicon nitride from a microelectronic device having said material thereon. The substrate preferably comprises a high-k/metal gate integration scheme.