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公开(公告)号：US6134049A
公开(公告)日：2000-10-17
申请号：US160264
申请日：1998-09-25
IPC分类号： B32B7/02 , B32B15/04 , G02B1/10 , G02B5/08 , G02B5/26 , G02B5/28 , G03F1/22 , G03F7/20 , F21V9/04
CPC分类号： G03F7/70958 , G02B5/0875 , G02B5/0891 , G02B5/26 , G03F1/22 , G21K1/062
摘要： Stress compensating systems that reduces/compensates stress in a multilayer without loss in reflectivity, while reducing total film thickness compared to the earlier buffer-layer approach. The stress free multilayer systems contain multilayer systems with two different material combinations of opposite stress, where both systems give good reflectivity at the design wavelengths. The main advantage of the multilayer system design is that stress reduction does not require the deposition of any additional layers, as in the buffer layer approach. If the optical performance of the two systems at the design wavelength differ, the system with the poorer performance is deposited first, and then the system with better performance last, thus forming the top of the multilayer system. The components for the stress reducing layer are chosen among materials that have opposite stress to that of the preferred multilayer reflecting stack and simultaneously have optical constants that allow one to get good reflectivity at the design wavelength. For a wavelength of 13.4 nm, the wavelength presently used for extreme ultraviolet (EUV) lithography, Si and Be have practically the same optical constants, but the Mo/Si multilayer has opposite stress than the Mo/Be multilayer. Multilayer systems of these materials have practically identical reflectivity curves. For example, stress free multilayers can be formed on a substrate using Mo/Be multilayers in the bottom of the stack and Mo/Si multilayers at the top of the stack, with the switch-over point selected to obtain zero stress. In this multilayer system, the switch-over point is at about the half point of the total thickness of the stack, and for the Mo/Be--Mo/Si system, there may be 25 deposition periods Mo/Be to 20 deposition periods Mo/Si.
摘要翻译： 应力补偿系统减少/补偿多层中的应力，而不损失反射率，同时减少与较早的缓冲层方法相比的总膜厚度。 无应力的多层系统包含具有两种不同材料组合的相反应力的多层系统，其中两个系统在设计波长处给出良好的反射率。 多层系统设计的主要优点是减压不需要任何附加层的沉积，如缓冲层方法一样。 如果两个系统的设计波长的光学性能不同，首先沉积性能较差的系统，然后再次具有更好性能的系统，从而形成多层系统的顶部。 应力降低层的组件选自具有与优选的多层反射叠层相反的应力的材料，并且同时具有允许在设计波长处获得良好的反射率的光学常数。 对于13.4nm的波长，目前用于极紫外（EUV）光刻的波长Si和Be实际上具有相同的光学常数，但Mo / Si多层具有与Mo / Be多层相反的应力。 这些材料的多层系统具有几乎相同的反射曲线。 例如，可以在堆叠底部使用Mo / Be多层和堆叠顶部的Mo / Si多层在衬底上形成无应力多层，选择切换点以获得零应力。 在该多层体系中，切换点为堆叠总厚度的大约一半，对于Mo / Be-Mo / Si系统，可能存在25个沉积周期Mo / Be至20个沉积周期Mo / Si。
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公开(公告)号：US06780496B2
公开(公告)日：2004-08-24
申请号：US10066108
申请日：2002-02-01
申请人： Sasa Bajt , James A. Folta , Eberhard A. Spiller
发明人： Sasa Bajt , James A. Folta , Eberhard A. Spiller
IPC分类号： B32B702
CPC分类号： G02B5/0891 , B82Y10/00 , G02B5/0825 , G21K1/062 , Y10T428/12493 , Y10T428/12674 , Y10T428/12729 , Y10T428/12826 , Y10T428/24975 , Y10T428/265 , Y10T428/30 , Y10T428/31678
摘要： A new capping multilayer structure for EUV-reflective Mo/Si multilayers consists of two layers: A top layer that protects the multilayer structure from the environment and a bottom layer that acts as a diffusion barrier between the top layer and the structure beneath. One embodiment combines a first layer of Ru with a second layer of B4C. Another embodiment combines a first layer of Ru with a second layer of Mo. These embodiments have the additional advantage that the reflectivity is also enhanced. Ru has the best oxidation resistance of all materials investigated so far. B4C is an excellent barrier against silicide formation while the silicide layer formed at the Si boundary is well controlled.
摘要翻译： 用于EUV反射Mo / Si多层的新的封盖多层结构由两层组成：保护多层结构免受环境的顶层和作为顶层和下面结构之间的扩散阻挡层的底层。 一个实施例将第一层Ru与第二层B4C组合。 另一个实施例将第一层Ru与第二层Mo组合在一起。这些实施例具有增强反射率的附加优点。 Ru具有迄今为止研究的所有材料的最佳抗氧化性。 B4C是硅化物形成的良好屏障，而Si边界处形成的硅化物层得到很好的控制。
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公开(公告)号：US20090116619A1
公开(公告)日：2009-05-07
申请号：US12121177
申请日：2008-05-15
CPC分类号： G01J1/429 , G01J1/04 , G01J1/0414 , G01J1/0455 , G01J1/4228 , G01N21/4788 , G21K2207/00
摘要： A system in one embodiment includes a source for directing a beam of radiation at a sample; a multilayer mirror having a face oriented at an angle of less than 90 degrees from an axis of the beam from the source, the mirror reflecting at least a portion of the radiation after the beam encounters a sample; and a pixellated detector for detecting radiation reflected by the mirror. A method in a further embodiment includes directing a beam of radiation at a sample; reflecting at least some of the radiation diffracted by the sample; not reflecting at least a majority of the radiation that is not diffracted by the sample; and detecting at least some of the reflected radiation. A method in yet another embodiment includes directing a beam of radiation at a sample; reflecting at least some of the radiation diffracted by the sample using a multilayer mirror; and detecting at least some of the reflected radiation.
摘要翻译： 一个实施例中的系统包括用于在样本处引导辐射束的源; 多层反射镜，其具有朝向与源的光束的轴线成小于90度的角度定向的面，反射镜在光束遇到样本之后反射至少一部分辐射; 以及用于检测由反射镜反射的辐射的像素化检测器。 另一实施例中的方法包括将样品的辐射束引导; 反映由样品衍射的至少一些辐射; 不反映不被样品衍射的辐射的至少大部分; 以及检测所述反射辐射中的至少一些。 另一实施例中的方法包括将样品的辐射束引导; 使用多层反射镜反射由样品衍射的至少一些辐射; 以及检测所述反射辐射中的至少一些。
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公开(公告)号：US07672430B2
公开(公告)日：2010-03-02
申请号：US12121177
申请日：2008-05-15
IPC分类号： G01N23/20
CPC分类号： G01J1/429 , G01J1/04 , G01J1/0414 , G01J1/0455 , G01J1/4228 , G01N21/4788 , G21K2207/00
摘要： A system in one embodiment includes a source for directing a beam of radiation at a sample; a multilayer mirror having a face oriented at an angle of less than 90 degrees from an axis of the beam from the source, the mirror reflecting at least a portion of the radiation after the beam encounters a sample; and a pixellated detector for detecting radiation reflected by the mirror. A method in a further embodiment includes directing a beam of radiation at a sample; reflecting at least some of the radiation diffracted by the sample; not reflecting at least a majority of the radiation that is not diffracted by the sample; and detecting at least some of the reflected radiation. A method in yet another embodiment includes directing a beam of radiation at a sample; reflecting at least some of the radiation diffracted by the sample using a multilayer mirror; and detecting at least some of the reflected radiation.
摘要翻译： 一个实施例中的系统包括用于在样本处引导辐射束的源; 多层反射镜，其具有朝向与源的光束的轴线成小于90度的角度定向的面，反射镜在光束遇到样本之后反射至少一部分辐射; 以及用于检测由反射镜反射的辐射的像素化检测器。 另一实施例中的方法包括将样品的辐射束引导; 反映由样品衍射的至少一些辐射; 不反映不被样品衍射的辐射的至少大部分; 以及检测所述反射辐射中的至少一些。 另一实施例中的方法包括将样品的辐射束引导; 使用多层反射镜反射由样品衍射的至少一些辐射; 以及检测所述反射辐射中的至少一些。
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5.发明授权公开(公告)号：US06319635B1
公开(公告)日：2001-11-20
申请号：US09454715
申请日：1999-12-06
申请人： Paul B. Mirkarimi , Sasa Bajt , Daniel G. Stearns
发明人： Paul B. Mirkarimi , Sasa Bajt , Daniel G. Stearns
IPC分类号： G03F900
摘要： A multilayer film is used as a buffer layer to minimize the size of defects on a reticle substrate prior to deposition of a reflective coating on the substrate. The multilayer buffer layer deposited intermediate the reticle substrate and the reflective coating produces a smoothing of small particles and other defects on the reticle substrate. The reduction in defect size is controlled by surface relaxation during the buffer layer growth process and by the degree of intermixing and volume contraction of the materials at the multilayer interfaces. The buffer layers are deposited at near-normal incidence via a low particulate ion beam sputtering process. The growth surface of the buffer layer may also be heated by a secondary ion source to increase the degree of intermixing and improve the mitigation of defects.
摘要翻译： 在将反射涂层沉积在基底上之前，使用多层膜作为缓冲层以最小化掩模版基板上的缺陷的尺寸。 沉积在掩模版基板和反射涂层之间的多层缓冲层在掩模版基板上产生平滑的小颗粒和其它缺陷。 缺陷尺寸的减少由缓冲层生长过程中的表面松弛和多层界面处的材料的混合和体积收缩程度控制。 缓冲层通过低颗粒离子束溅射工艺以近正常入射沉积。 缓冲层的生长表面也可以被二次离子源加热以增加混合程度并改善缺陷的减轻。
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6.发明授权Growth of multi-component alloy films with controlled graded chemical composition on sub-nanometer scale 有权具有亚纳米级控制分级化学成分的多组分合金薄膜的生长公开(公告)号：US06867149B2
公开(公告)日：2005-03-15
申请号：US10256324
申请日：2002-09-27
申请人： Sasa Bajt , Stephen P. Vernon
发明人： Sasa Bajt , Stephen P. Vernon
CPC分类号： H01J37/3491 , C23C14/3414 , C23C14/3464 , C23C14/548
摘要： The chemical composition of thin films is modulated during their growth. A computer code has been developed to design specific processes for producing a desired chemical composition for various deposition geometries. Good agreement between theoretical and experimental results was achieved.
摘要翻译： 薄膜的化学成分在其生长过程中被调制。 已经开发了计算机代码来设计用于生产用于各种沉积几何形状的所需化学组成的具体方法。 理论与实验结果达成了良好的一致。
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7.发明授权Multilayer films with sharp, stable interfaces for use in EUV and soft X-ray application 有权具有尖锐，稳定界面的多层膜，用于EUV和软X射线应用公开(公告)号：US06396900B1
公开(公告)日：2002-05-28
申请号：US09847744
申请日：2001-05-01
申请人： Troy W. Barbee, Jr. , Sasa Bajt
发明人： Troy W. Barbee, Jr. , Sasa Bajt
IPC分类号： G21K106
CPC分类号： B82Y10/00 , G02B5/0891 , G21K1/062
摘要： The reflectivity and thermal stability of Mo/Si (molybdenum/silicon) multilayer films, used in soft x-ray and extreme ultraviolet region, is enhanced by deposition of a thin layer of boron carbide (e.g., B4C) between alternating layers of Mo and Si. The invention is useful for reflective coatings for soft X-ray and extreme ultraviolet optics, multilayer for masks, coatings for other wavelengths and multilayers for masks that are more thermally stable than pure Mo/Si multilayers
摘要翻译： 用于软X射线和极紫外区域的Mo / Si（钼/硅）多层薄膜的反射率和热稳定性通过在Mo交替层之间沉积碳化硼薄层（例如，B4C）而得到增强， Si。 本发明对于用于软X射线和极紫外光学器件的反射涂层，用于掩模的多层膜，用于其它波长的涂层以及对于比纯Mo / Si多层膜更热稳定的掩模的多层膜是有用的
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8.发明授权Technique to quantitatively measure magnetic properties of thin structures at <10 NM spatial resolution 失效在<10 NM空间分辨率下定量测量薄结构的磁性能的技术公开(公告)号：US06590209B1
公开(公告)日：2003-07-08
申请号：US09516878
申请日：2000-03-01
申请人： Sasa Bajt
发明人： Sasa Bajt
IPC分类号： G01N2304
CPC分类号： G01R33/10 , G01N23/04 , H01J2237/2588
摘要： A highly sensitive and high resolution magnetic microscope images magnetic properties quantitatively. Imaging is done with a modified transmission electron microscope that allows imaging of the sample in a zero magnetic field. Two images from closely spaced planes, one in focus and one slightly out of focus, are sufficient to calculate the absolute values of the phase change imparted to the electrons, and hence obtain the magnetization vector field distribution.
摘要翻译： 高灵敏度和高分辨率的磁性显微镜对磁性能进行定量成像。 用改进的透射电子显微镜进行成像，其允许在零磁场中成像样品。 来自紧密间隔的平面的两个图像，一个聚焦，一个略微偏离焦距，足以计算给予电子的相变的绝对值，因此获得磁化矢量场分布。
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公开(公告)号：US06229652B1
公开(公告)日：2001-05-08
申请号：US09200163
申请日：1998-11-25
申请人： Sasa Bajt , Troy W. Barbee, Jr.
发明人： Sasa Bajt , Troy W. Barbee, Jr.
IPC分类号： G02B110
CPC分类号： G02B5/0891 , G02B5/26 , G03F7/70958
摘要： A material for extreme ultraviolet (EUV) multilayers that will reflect at about 11.3 nm, have a high reflectance, low stress, and high thermal and radiation stability. The material consists of alternating layers of Mo2C and Be deposited by DC magnetron sputtering on a substrate, such as silicon. In one example a Mo2C/Be multilayer gave 65.2% reflectance at 11.25 nm measured at 5 degrees off normal incidence angle, and consisted of 70 bilayers with a deposition period of 5.78 nm, and was deposited at 0.83 mTorr argon (Ar) sputtering pressure, with the first and last layers being Be. The stress of the multilayer is tensile and only +88 MPa, compared to +330 MPa of a Mo/Be multilayers of the same thickness. The Mo2C/Be multilayer was capped with carbon which produced an increase in reflectivity of about 7% over a similar multilayer with no carbon capping material, thus raising the reflectivity from 58.3% to over 65%. The multilayers were formed using either Mo2C or Be as the first and last layers, and initial testing has shown the formation of beryllium carbide at the interfaces between the layers which both stabilizes and has a smoothing effect, and appear to be smoother than the interfaces in Mo/Be multilayers.
摘要翻译： 将在11.3纳米处反射的极紫外（EUV）多层材料具有高反射率，低应力和高热辐射稳定性。 该材料由通过DC磁控溅射沉积的Mo2C交替层和在诸如硅的衬底上沉积。 在一个实例中，Mo2C / Be多层在垂直入射角5度下测量的11.25nm处的反射率为65.2％，由沉积周期为5.78nm的70个双层组成，并以0.83mTorr氩（Ar）溅射压力沉积， 第一层和最后层是Be。 与相同厚度的Mo / Be多层的+330MPa相比，多层的应力是拉伸且仅+88MPa。 Mo2C / Be多层被碳覆盖，与没有碳覆盖材料的类似多层相比，反射率增加约7％，从而将反射率从58.3％提高到65％以上。 多层是使用Mo2C或Be作为第一层和最后层形成的，初步测试显示在两层之间的界面处形成碳化铍，两层之间的界面既稳定又具有平滑效果，并且看起来比其界面更平滑 Mo / Be多层。
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