公开(公告)号：US09691629B2

公开(公告)日：2017-06-27

申请号：US14880698

申请日：2015-10-12

Applicant: Entegris, Inc.

Inventor： Emanuel I. Cooper ,  Eileen Sparks ,  William R. Bowers ,  Mark A. Biscotto ,  Kevin P. Yanders ,  Michael B. Korzenski

IPC: H01L21/311 ,  C09K13/08 ,  B65D85/00 ,  G03F7/42 ,  H01L21/02

CPC classification number: H01L21/31111 ,  B65D85/70 ,  C09K13/08 ,  G03F7/422 ,  H01L21/0206 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Compositions useful for the selective removal of silicon nitride materials relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon. The removal compositions include fluorosilicic acid, silicic acid, and at least one organic solvent. Typical process temperatures are less than about 100° C. and typical selectivity for nitride versus oxide etch is about 200:1 to about 2000:1. Under typical process conditions, nickel-based silicides as well as titanium and tantalum nitrides are largely unaffected, and polysilicon etch rates are less than about 1 Å min−1.