公开(公告)号：US11365351B2

公开(公告)日：2022-06-21

申请号：US17066152

申请日：2020-10-08

Applicant: ENTEGRIS, INC.

Inventor： YoungMin Kim ,  Michael White ,  Daniela White ,  Emanuel I. Cooper ,  Steven M. Bilodeau

IPC: C09K13/06 ,  H01L21/311 ,  H01J37/32

Abstract: The invention provides a composition and method for improving the selectivity of nitride etching versus oxide etching and can be used with conventional phosphoric acid wet etch compositions. The invention describes additives that serve to inhibit silicon, oxides, and related compounds regrowth (i.e., redeposition) on the silicon oxide surface. In certain embodiments, the invention provides certain amino-substituted aryl compounds which are bound to a tri-alkoxy silane.

公开(公告)号：US11164738B2

公开(公告)日：2021-11-02

申请号：US15874388

申请日：2018-01-18

Applicant: Entegris, Inc.

Inventor： Daniela White ,  Thomas Parson ,  Michael White ,  Emanuel I. Cooper ,  Atanu Das

IPC: C09G1/04 ,  H01L21/02 ,  H01L21/321 ,  C08L33/08 ,  C08L33/10 ,  C09G1/16

Abstract: A removal composition and process for cleaning post-chemical mechanical polishing (CMP) contaminants and ceria particles from a microelectronic device having said particles and contaminants thereon. The composition achieves highly efficacious removal of the ceria particles and CMP contaminant material from the surface of the microelectronic device without compromising the low-k dielectric, silicon nitride, or tungsten-containing materials.

公开(公告)号：US10176979B2

公开(公告)日：2019-01-08

申请号：US14378842

申请日：2013-02-15

Applicant: ENTEGRIS, INC.

Inventor： Jun Liu ,  Jeffrey A. Barnes ,  Emanuel I. Cooper ,  Laisheng Sun ,  Elizabeth Thomas ,  Jason Chang

IPC: H01L21/02 ,  C11D1/72 ,  C11D3/20 ,  C11D1/66 ,  C11D1/22 ,  C11D1/38 ,  B08B3/08 ,  C11D11/00 ,  C11D3/39 ,  C11D7/06 ,  C11D3/04 ,  C11D3/34

Abstract: An amine-free composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The amine-free composition preferably includes at least one oxidizing agent, at least one complexing agent, at least one basic compound, and water and has a pH in the range from about 2.5 to about 11.5. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.

公开(公告)号：US20180240674A1

公开(公告)日：2018-08-23

申请号：US15752640

申请日：2016-08-12

Applicant: Entegris, Inc.

Inventor： Steven Bilodeau ,  Emanuel I. Cooper ,  Hsing-Chen Wu ,  Min-Chieh Yang

IPC: H01L21/28 ,  H01L21/762 ,  H01L21/02

CPC classification number: H01L21/28255 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02664 ,  H01L21/762

Abstract: Compositions useful for the passivation of germanium-containing materials on a microelectronic device having same thereon.

公开(公告)号：US11788007B2

公开(公告)日：2023-10-17

申请号：US17389879

申请日：2021-07-30

Applicant: ENTEGRIS, INC.

Inventor： Hsing-Chen Wu ,  Emanuel I. Cooper ,  Min-Chieh Yang

IPC: C09K13/04 ,  H01L21/311 ,  C09K13/06 ,  C09K13/10 ,  H10B69/00

CPC classification number: C09K13/04 ,  C09K13/06 ,  C09K13/10 ,  H01L21/311 ,  H01L21/31111 ,  H01L21/31133 ,  H10B69/00

Abstract: Provided are compositions and methods useful in etching, i.e., removing amorphous carbon hard masks which have been doped with elements such as boron, chlorine, or nitrogen. The compositions utilize concentrated sulfuric acid, water, and at least one oxidizing agent. In the operation of the method, the composition selectively removes the doped hard mask layer, even in the presence of layers such as silicon dioxide, silicon nitride, tantalum nitride, and polysilicon, with good selectivity.

公开(公告)号：US20220336210A1

公开(公告)日：2022-10-20

申请号：US17720580

申请日：2022-04-14

Applicant: ENTEGRIS, INC.

Inventor： Jun Liu ,  Michael L. White ,  Daniela White ,  Emanuel I. Cooper

IPC: H01L21/02

Abstract: Provided are compositions useful for the cleaning of microelectronic device structures. The residues may include post-CMP, post-etch, post-ash residues, pad and brush debris, metal and metal oxide particles and precipitated metal organic complexes such as copper-benzotriazole complexes. Advantageously, the compositions as described herein show improved aluminum, cobalt, and copper compatibility.

公开(公告)号：US10475658B2

公开(公告)日：2019-11-12

申请号：US15108696

申请日：2014-12-29

Applicant: ENTEGRIS, INC.

Inventor： Steven Bilodeau ,  Emanuel I. Cooper

IPC: H01L21/306 ,  H01L21/3213

Abstract: Compositions useful for the selective removal of silicon-containing materials relative to germanium-containing materials, and vice versa, from a microelectronic device having same thereon. The removal compositions include at least one diol and are tunable to achieve the required Si:Ge removal selectivity and etch rates.

公开(公告)号：US10138117B2

公开(公告)日：2018-11-27

申请号：US14908888

申请日：2014-07-31

Applicant: Entegris, Inc.

Inventor： Li-Min Chen ,  Steven Lippy ,  Daniela White ,  Emanuel I. Cooper

IPC: B81C1/00 ,  C09K13/08 ,  G03F7/40 ,  H01L21/3213 ,  C09K13/10 ,  H01L21/02 ,  H01L21/311

Abstract: Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., tungsten, and insulating materials from a microelectronic device having same thereon. The removal compositions are low pH and contain at least one oxidizing agent and at least one etchant as well as corrosion inhibitors to minimize metal erosion and passivating agents to protect dielectric materials.

公开(公告)号：US20180240680A1

公开(公告)日：2018-08-23

申请号：US15892775

申请日：2018-02-09

Applicant: Entegris, Inc.

Inventor： Steven Bilodeau ,  Emanuel I. Cooper ,  Jaeseok Lee ,  WonLae Kim ,  Jeffrey A. Barnes

IPC: H01L21/311 ,  H01L21/027 ,  G03F7/42 ,  H01L21/02

CPC classification number: H01L21/31133 ,  G03F7/423 ,  H01L21/02057 ,  H01L21/0273

Abstract: A method and composition for removing bulk and/or ion-implanted resist material from microelectronic devices have been developed. The compositions effectively remove the ion-implanted resist material while not damaging the silicon-containing or germanium-containing materials.

公开(公告)号：US20180197746A1

公开(公告)日：2018-07-12

申请号：US15742334

申请日：2016-07-07

Applicant: Entegris, Inc.

Inventor： Steven Bilodeau ,  Emanuel I. Cooper

IPC: H01L21/306 ,  C09K13/08 ,  C09K13/06

CPC classification number: H01L21/30604 ,  C09K13/06 ,  C09K13/08

Abstract: Compositions useful for the selective removal of silicon germanium materials relative to germanium-containing materials and silicon-containing materials from a microelectronic device having same thereon. The removal compositions include at least one diol and are tunable to achieve the required SiGe:Ge removal selectivity and etch rates.