Acceleration of silver removal by thioether compounds in sulfite fixer
    1.
    发明授权
    Acceleration of silver removal by thioether compounds in sulfite fixer 失效
    加速亚硫酸盐固定剂中硫醚化合物除银

    公开(公告)号:US5424176A

    公开(公告)日:1995-06-13

    申请号:US149500

    申请日:1993-11-09

    CPC分类号: G03C7/42 G03C5/38

    摘要: A fixing solution having a pH.gtoreq.7 and comprising a fixing amount of sulfite and a fix accelerating amount of a thioether compound; wherein the fixing solution contains less than 0.05 moles/liter of thiosulfate and a method of processing an imagewise exposed and developed silver halide photographic element comprising fixing in said fixing solution a silver halide photographic element containing at least one emulsion or deposit of silver halide comprising greater than 90 mole % silver chloride.

    摘要翻译: 具有pH> 7的固定液,其含有亚硫酸盐的固定量和固化促进量的硫醚化合物; 其中所述定影溶液含有少于0.05摩尔/升的硫代硫酸盐,以及处理成像曝光和显影的卤化银照相元件的方法,包括在所述定影液中固定卤化银照相元件,所述卤化银照相元件含有至少一种包含较大 超过90摩尔%氯化银。

    Method of manufacturing an inverted bottom-emitting OLED device
    5.
    发明授权
    Method of manufacturing an inverted bottom-emitting OLED device 有权
    反向底部发射OLED器件的制造方法

    公开(公告)号:US08102114B2

    公开(公告)日:2012-01-24

    申请号:US12394077

    申请日:2009-02-27

    IPC分类号: H01L51/50

    摘要: A method of making an inverted bottom-emitting OLED device, comprising: providing a substrate; providing one or more first electrodes driven by n-type transistors on the substrate; providing an electron-transporting layer over the substrate and first electrode(s), wherein the electron-transporting layer comprises an n-type inorganic semiconductive material with a resistivity in the range of 1 to 105 ohm-cm and a bandgap greater than 2.5 eV; providing an organic light-emitting layer over the electron-transporting layer; providing a hole-transporting layer over the organic emitting layer; and providing a second electrode over the hole-transporting layer.

    摘要翻译: 一种制造反向底部发射OLED器件的方法,包括:提供衬底; 提供由衬底上的n型晶体管驱动的一个或多个第一电极; 在所述衬底和所述第一电极之上提供电子传输层,其中所述电子传输层包括电阻率在1至105欧姆 - 厘米和带隙大于2.5eV的n型无机半导体材料 ; 在电子传输层上提供有机发光层; 在有机发光层上提供空穴传输层; 并在空穴传输层上方提供第二电极。

    INVERTED BOTTOM-EMITTING OLED DEVICE
    6.
    发明申请
    INVERTED BOTTOM-EMITTING OLED DEVICE 有权
    反射底层发光OLED器件

    公开(公告)号:US20100219747A1

    公开(公告)日:2010-09-02

    申请号:US12394077

    申请日:2009-02-27

    IPC分类号: H01J1/63 H01L21/28

    摘要: A method of making an inverted bottom-emitting OLED device, comprising: providing a substrate; providing one or more first electrodes driven by n-type transistors on the substrate; providing an electron-transporting layer over the substrate and first electrode(s), wherein the electron-transporting layer comprises an n-type inorganic semiconductive material with a resistivity in the range of 1 to 105 ohm-cm and a bandgap greater than 2.5 eV; providing an organic light-emitting layer over the electron-transporting layer; providing a hole-transporting layer over the organic emitting layer; and providing a second electrode over the hole-transporting layer.

    摘要翻译: 一种制造反向底部发射OLED器件的方法,包括:提供衬底; 提供由衬底上的n型晶体管驱动的一个或多个第一电极; 在所述衬底和所述第一电极之上提供电子传输层,其中所述电子传输层包括电阻率在1至105欧姆 - 厘米和带隙大于2.5eV的n型无机半导体材料 ; 在电子传输层上提供有机发光层; 在有机发光层上提供空穴传输层; 并在空穴传输层上方提供第二电极。

    Inverted Bottom-Emitting OLED Device
    7.
    发明申请
    Inverted Bottom-Emitting OLED Device 审中-公开
    倒置底部发光OLED器件

    公开(公告)号:US20110024770A1

    公开(公告)日:2011-02-03

    申请号:US12902643

    申请日:2010-10-12

    IPC分类号: H01L51/50

    摘要: A method of making an inverted bottom-emitting OLED device, comprising: providing a substrate; providing one or more first electrodes driven by n-type transistors on the substrate; providing an electron-transporting layer over the substrate and first electrode(s), wherein the electron-transporting layer comprises an n-type inorganic semiconductive material with a resistivity in the range of 1 to 105 ohm-cm and a bandgap greater than 2.5 eV; providing an organic light-emitting layer over the electron-transporting layer; providing a hole-transporting layer over the organic emitting layer; and providing a second electrode over the hole-transporting layer.

    摘要翻译: 一种制造反向底部发射OLED器件的方法,包括:提供衬底; 提供由衬底上的n型晶体管驱动的一个或多个第一电极; 在所述衬底和所述第一电极之上提供电子传输层,其中所述电子传输层包括电阻率在1至105欧姆 - 厘米和带隙大于2.5eV的n型无机半导体材料 ; 在电子传输层上提供有机发光层; 在有机发光层上提供空穴传输层; 并在空穴传输层上方提供第二电极。

    NOVEL NANOPARTICLE PATTERNING PROCESS
    8.
    发明申请
    NOVEL NANOPARTICLE PATTERNING PROCESS 有权
    新型纳米图案方法

    公开(公告)号:US20070281249A1

    公开(公告)日:2007-12-06

    申请号:US11421894

    申请日:2006-06-02

    IPC分类号: G03F7/26

    CPC分类号: G03F7/40 G03F7/0047

    摘要: A method of making a metallic pattern (250) comprises: depositing a layer of photoresist (130) on a substrate (110); forming a patter on the photoresist; depositing a layer of metal nanoparticles (190) on the photoresist and pattern; removing the photoresist and overlying metal nanoparticles on the photoresist; and sintering the remaining nanoparticles to form a metallic pattern.

    摘要翻译: 制造金属图案(250)的方法包括:在基底(110)上沉积光致抗蚀剂层(130); 在光致抗蚀剂上形成图案; 在光致抗蚀剂和图案上沉积一层金属纳米粒子(190); 去除光致抗蚀剂并覆盖光致抗蚀剂上的金属纳米颗粒; 并烧结剩余的纳米颗粒以形成金属图案。

    Nanoparticle patterning process
    9.
    发明授权
    Nanoparticle patterning process 有权
    纳米粒子图案化过程

    公开(公告)号:US07745101B2

    公开(公告)日:2010-06-29

    申请号:US11421894

    申请日:2006-06-02

    IPC分类号: H01L21/00 G03F7/00

    CPC分类号: G03F7/40 G03F7/0047

    摘要: A method of making a metallic pattern (250) comprises: depositing a layer of photoresist (130) on a substrate (110); forming a pattern on the photoresist; depositing a layer of metal nanoparticles (190) on the photoresist and pattern; removing the photoresist and overlying metal nanoparticles on the photoresist; and sintering the remaining nanoparticles to form a metallic pattern.

    摘要翻译: 制造金属图案(250)的方法包括:在基底(110)上沉积光致抗蚀剂层(130); 在光致抗蚀剂上形成图案; 在光致抗蚀剂和图案上沉积一层金属纳米粒子(190); 去除光致抗蚀剂并覆盖光致抗蚀剂上的金属纳米颗粒; 并烧结剩余的纳米颗粒以形成金属图案。