公开(公告)号：US20190229185A1

公开(公告)日：2019-07-25

申请号：US15876727

申请日：2018-01-22

Applicant: GLOBALFOUNDRIES INC.

Inventor： Siva P. ADUSUMILLI ,  Anthony K. STAMPER ,  Laura J. SCHUTZ ,  Cameron E. Luce

IPC: H01L29/06 ,  H01L27/12 ,  H01L29/78 ,  H01L21/762 ,  H01L21/84

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to sealed cavity structures having a planar surface and methods of manufacture. The structure includes a cavity formed in a substrate material and which has a curvature at its upper end. The cavity is covered with epitaxial material that has an upper planar surface.

公开(公告)号：US10446643B2

公开(公告)日：2019-10-15

申请号：US15876727

申请日：2018-01-22

Applicant: GLOBALFOUNDRIES INC.

Inventor： Siva P. Adusumilli ,  Anthony K. Stamper ,  Laura J. Schutz ,  Cameron E. Luce

IPC: H01L29/06 ,  H01L29/49 ,  H01L29/51 ,  H01L29/78 ,  H01L27/12 ,  H01L21/84 ,  H01L21/762

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to sealed cavity structures having a planar surface and methods of manufacture. The structure includes a cavity formed in a substrate material and which has a curvature at its upper end. The cavity is covered with epitaxial material that has an upper planar surface.