公开(公告)号：US10770344B2

公开(公告)日：2020-09-08

申请号：US16244071

申请日：2019-01-09

Applicant: GLOBALFOUNDRIES INC.

Inventor： Yuping Ren ,  Haigou Huang ,  Ravi Prakash Srivastava ,  Zhiguo Sun ,  Qiang Fang ,  Cheng Xu ,  Guoxiang Ning

IPC: H01L21/768 ,  H01L23/522 ,  H01L21/311 ,  H01L21/02

Abstract: A method of fabricating interconnects in a semiconductor device is provided, which includes forming an interconnect layer having a conductive line and depositing a first aluminum-containing layer over the interconnect layer. A dielectric layer is deposited over the first aluminum-containing layer, followed by a second aluminum-containing layer deposited over the dielectric layer. A via opening is formed in the second aluminum-containing layer through to the conductive line, wherein the via opening has chamferless sidewalls.