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公开(公告)号:US20170242952A1
公开(公告)日:2017-08-24
申请号:US15048066
申请日:2016-02-19
Applicant: GLOBALFOUNDRIES INC.
Inventor: Haraprasad Nanjundappa , Basanth Jagannathan , Laura S. Chadwick , Dureseti Chidambarrao , Christopher V. Baiocco
IPC: G06F17/50
CPC classification number: G06F17/5081
Abstract: Various embodiments include approaches for analyzing integrated circuit (IC) designs. In some cases, an approach includes: defining extraction parameters for the design of the IC for each of a set of failure modes; testing the design of the IC for a failure mode in the set of failure modes; identifying a defined extraction parameter from the design of the IC for at least one of the set of failure modes; correlating the identified defined extracted parameter and each of the at least one failure mode for the design of the IC; and creating a normalized parameter equation representing the correlation of the identified defined extraction parameter with the at least one failure mode for the design of the IC in numerical form.
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公开(公告)号:US09431289B2
公开(公告)日:2016-08-30
申请号:US14741618
申请日:2015-06-17
Applicant: GLOBALFOUNDRIES INC.
Inventor: Christopher V. Baiocco , Michael P. Chudzik , Deleep R. Nair , Jay M. Shah
IPC: H01L21/76 , H01L21/762 , H01L29/66 , H01L29/06 , H01L29/78
CPC classification number: H01L21/76224 , H01L21/762 , H01L29/0649 , H01L29/66537 , H01L29/783
Abstract: Oxygen scavenging material embedded in an isolation structure provides improved protection of high dielectric constant (Hi-K) materials from oxygen contamination while avoiding alteration of work function and switching threshold shift in transistors including such Hi-K materials.
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公开(公告)号:US09754071B1
公开(公告)日:2017-09-05
申请号:US15048066
申请日:2016-02-19
Applicant: GLOBALFOUNDRIES INC.
Inventor: Haraprasad Nanjundappa , Basanth Jagannathan , Laura S. Chadwick , Dureseti Chidambarrao , Christopher V. Baiocco
IPC: G06F17/50
CPC classification number: G06F17/5081
Abstract: Various embodiments include approaches for analyzing integrated circuit (IC) designs. In some cases, an approach includes: defining extraction parameters for the design of the IC for each of a set of failure modes; testing the design of the IC for a failure mode in the set of failure modes; identifying a defined extraction parameter from the design of the IC for at least one of the set of failure modes; correlating the identified defined extracted parameter and each of the at least one failure mode for the design of the IC; and creating a normalized parameter equation representing the correlation of the identified defined extraction parameter with the at least one failure mode for the design of the IC in numerical form.
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