公开(公告)号：US20160225853A1

公开(公告)日：2016-08-04

申请号：US15093053

申请日：2016-04-07

Applicant: GLOBALFOUNDRIES INC.

Inventor： Jack O. Chu ,  Christos D. Dimitrakopoulos ,  Alfred Grill ,  Chun-Yung Sung

IPC: H01L29/16 ,  H01L29/161 ,  H01L29/04

CPC classification number: H01L29/1606 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/184 ,  C01B2204/04 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/0245 ,  H01L21/02527 ,  H01L21/0262 ,  H01L21/02664 ,  H01L21/02667 ,  H01L29/045 ,  H01L29/1608 ,  H01L29/161 ,  Y10T428/265

Abstract: A semiconductor-carbon alloy layer is formed on the surface of a semiconductor substrate, which may be a commercially available semiconductor substrate such as a silicon substrate. The semiconductor-carbon alloy layer is converted into at least one graphene layer during a high temperature anneal, during which the semiconductor material on the surface of the semiconductor-carbon alloy layer is evaporated selective to the carbon atoms. As the semiconductor atoms are selectively removed and the carbon concentration on the surface of the semiconductor-carbon alloy layer increases, the remaining carbon atoms in the top layers of the semiconductor-carbon alloy layer coalesce to form a graphene layer having at least one graphene monolayer. Thus, a graphene layer may be provided on a commercially available semiconductor substrate having a diameter of 200 mm or 300 mm.

Abstract translation: 半导体 - 碳合金层形成在半导体衬底的表面上，半导体衬底的表面可以是诸如硅衬底的市售半导体衬底。 半导体 - 碳合金层在高温退火期间被转化为至少一个石墨烯层，在此期间半导体 - 碳合金层表面上的半导体材料对碳原子有选择性的蒸发。 随着半导体原子被选择性地去除并且半导体 - 碳合金层的表面上的碳浓度增加，半导体 - 碳合金层顶层中剩余的碳原子聚结形成具有至少一个石墨烯单层的石墨烯层 。 因此，可以在直径为200mm或300mm的市售半导体衬底上提供石墨烯层。