公开(公告)号：US20160225853A1

公开(公告)日：2016-08-04

申请号：US15093053

申请日：2016-04-07

Applicant: GLOBALFOUNDRIES INC.

Inventor： Jack O. Chu ,  Christos D. Dimitrakopoulos ,  Alfred Grill ,  Chun-Yung Sung

IPC: H01L29/16 ,  H01L29/161 ,  H01L29/04

CPC classification number: H01L29/1606 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/184 ,  C01B2204/04 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/0245 ,  H01L21/02527 ,  H01L21/0262 ,  H01L21/02664 ,  H01L21/02667 ,  H01L29/045 ,  H01L29/1608 ,  H01L29/161 ,  Y10T428/265

Abstract: A semiconductor-carbon alloy layer is formed on the surface of a semiconductor substrate, which may be a commercially available semiconductor substrate such as a silicon substrate. The semiconductor-carbon alloy layer is converted into at least one graphene layer during a high temperature anneal, during which the semiconductor material on the surface of the semiconductor-carbon alloy layer is evaporated selective to the carbon atoms. As the semiconductor atoms are selectively removed and the carbon concentration on the surface of the semiconductor-carbon alloy layer increases, the remaining carbon atoms in the top layers of the semiconductor-carbon alloy layer coalesce to form a graphene layer having at least one graphene monolayer. Thus, a graphene layer may be provided on a commercially available semiconductor substrate having a diameter of 200 mm or 300 mm.

Abstract translation: 半导体 - 碳合金层形成在半导体衬底的表面上，半导体衬底的表面可以是诸如硅衬底的市售半导体衬底。 半导体 - 碳合金层在高温退火期间被转化为至少一个石墨烯层，在此期间半导体 - 碳合金层表面上的半导体材料对碳原子有选择性的蒸发。 随着半导体原子被选择性地去除并且半导体 - 碳合金层的表面上的碳浓度增加，半导体 - 碳合金层顶层中剩余的碳原子聚结形成具有至少一个石墨烯单层的石墨烯层 。 因此，可以在直径为200mm或300mm的市售半导体衬底上提供石墨烯层。

公开(公告)号：US09431520B2

公开(公告)日：2016-08-30

申请号：US14810017

申请日：2015-07-27

Applicant: GLOBALFOUNDRIES INC.

Inventor： Guy M. Cohen ,  Christos D. Dimitrakopoulos ,  Alfred Grill

IPC: H01L29/66 ,  H01L29/775 ,  H01L21/3105 ,  H01L21/306 ,  H01L21/02 ,  H01L21/324 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/06 ,  H01L29/10 ,  H01L29/16 ,  H01L51/00 ,  H01L21/28 ,  H01L29/78 ,  H01L51/05 ,  B82Y99/00

CPC classification number: H01L29/66795 ,  B82Y10/00 ,  B82Y40/00 ,  B82Y99/00 ,  H01L21/02057 ,  H01L21/02381 ,  H01L21/02527 ,  H01L21/02529 ,  H01L21/02636 ,  H01L21/28008 ,  H01L21/30604 ,  H01L21/31051 ,  H01L21/324 ,  H01L29/0673 ,  H01L29/1025 ,  H01L29/1606 ,  H01L29/66439 ,  H01L29/66742 ,  H01L29/66787 ,  H01L29/775 ,  H01L29/785 ,  H01L51/0045 ,  H01L51/0048 ,  H01L51/0558

Abstract: Semiconductor structures including parallel graphene nanoribbons or carbon nanotubes oriented along crystallographic directions are provided from a template of silicon carbide (SiC) fins or nanowires. The SiC fins or nanowires are first provided and then graphene nanoribbons or carbon nanotubes are formed on the exposed surfaces of the fin or the nanowires by annealing. In embodiments in which closed carbon nanotubes are formed, the nanowires are suspended prior to annealing. The location, orientation and chirality of the graphene nanoribbons and the carbon nanotubes that are provided are determined by the corresponding silicon carbide fins and nanowires from which they are formed.

公开(公告)号：US09236250B2

公开(公告)日：2016-01-12

申请号：US13924064

申请日：2013-06-21

Applicant: GLOBALFOUNDRIES INC.

Inventor： Jack O. Chu ,  Christos D. Dimitrakopoulos ,  Marcus O. Freitag ,  Alfred Grill ,  Timothy J. McArdle ,  Robert L. Wisnieff

IPC: H01L21/02 ,  H01L29/16 ,  H01L29/267

CPC classification number: H01L21/02447 ,  H01L21/02378 ,  H01L21/0242 ,  H01L21/02527 ,  H01L21/02612 ,  H01L21/0262 ,  H01L21/02656 ,  H01L29/1606 ,  H01L29/267

Abstract: A single crystalline silicon carbide layer can be grown on a single crystalline sapphire substrate. Subsequently, a graphene layer can be formed by conversion of a surface layer of the single crystalline silicon layer during an anneal at an elevated temperature in an ultrahigh vacuum environment. Alternately, a graphene layer can be deposited on an exposed surface of the single crystalline silicon carbide layer. A graphene layer can also be formed directly on a surface of a sapphire substrate or directly on a surface of a silicon carbide substrate. Still alternately, a graphene layer can be formed on a silicon carbide layer on a semiconductor substrate. The commercial availability of sapphire substrates and semiconductor substrates with a diameter of six inches or more allows formation of a graphene layer on a commercially scalable substrate for low cost manufacturing of devices employing a graphene layer.

公开(公告)号：US20140179119A1

公开(公告)日：2014-06-26

申请号：US14194036

申请日：2014-02-28

Applicant: GLOBALFOUNDRIES, INC. ,  International Business Machines Corporation

Inventor： Alfred Grill ,  Joshua L. Herman ,  Son Nguyen ,  E. Todd Ryan ,  Hosadurga K. Shobha

IPC: H01L21/02

CPC classification number: H01L21/02263 ,  C23C16/325 ,  C23C16/56 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834

Abstract: A method of forming a carbon-rich silicon carbide-like dielectric film having a carbon concentration of greater than, or equal to, about 30 atomic % C and a dielectric constant of less than, or equal to, about 4.5 is provided. The dielectric film may optionally include nitrogen. When nitrogen is present, the carbon-rich silicon carbide-like dielectric film has a concentration nitrogen that is less than, or equal, to about 5 atomic % nitrogen.

Abstract translation: 提供了形成碳浓度大于或等于约30原子％C并且介电常数小于或等于约4.5的富碳碳化硅状电介质膜的方法。 电介质膜可以任选地包括氮。 当存在氮时，富含碳的碳化硅状电介质膜具有小于或等于约5原子％氮的浓度氮。

公开(公告)号：US09397195B2

公开(公告)日：2016-07-19

申请号：US14064830

申请日：2013-10-28

Applicant: GLOBALFOUNDRIES INC.

Inventor： Guy Cohen ,  Christos D. Dimitrakopoulos ,  Alfred Grill

IPC: H01L29/775 ,  H01L29/66 ,  H01L21/3105 ,  H01L21/306 ,  H01L21/02 ,  H01L21/324 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/06 ,  H01L29/10 ,  H01L29/16 ,  H01L51/00 ,  H01L21/28 ,  H01L29/78 ,  H01L51/05 ,  B82Y99/00

CPC classification number: H01L29/66795 ,  B82Y10/00 ,  B82Y40/00 ,  B82Y99/00 ,  H01L21/02057 ,  H01L21/02381 ,  H01L21/02527 ,  H01L21/02529 ,  H01L21/02636 ,  H01L21/28008 ,  H01L21/30604 ,  H01L21/31051 ,  H01L21/324 ,  H01L29/0673 ,  H01L29/1025 ,  H01L29/1606 ,  H01L29/66439 ,  H01L29/66742 ,  H01L29/66787 ,  H01L29/775 ,  H01L29/785 ,  H01L51/0045 ,  H01L51/0048 ,  H01L51/0558

Abstract: Semiconductor structures including parallel graphene nanoribbons or carbon nanotubes oriented along crystallographic directions are provided from a template of silicon carbide (SiC) fins or nanowires. The SiC fins or nanowires are first provided and then graphene nanoribbons or carbon nanotubes are formed on the exposed surfaces of the fin or the nanowires by annealing. In embodiments in which closed carbon nanotubes are formed, the nanowires are suspended prior to annealing. The location, orientation and chirality of the graphene nanoribbons and the carbon nanotubes that are provided are determined by the corresponding silicon carbide fins and nanowires from which they are formed.

公开(公告)号：US09040411B2

公开(公告)日：2015-05-26

申请号：US14194036

申请日：2014-02-28

Applicant: International Business Machines Corporation ,  Globalfoundries, Inc.

Inventor： Alfred Grill ,  Joshua L. Herman ,  Son Nguyen ,  E. Todd Ryan ,  Hosadurga K. Shobha

IPC: H01L21/4763 ,  H01L21/31 ,  H01L21/02 ,  C23C16/32 ,  C23C16/56 ,  H01L21/768

CPC classification number: H01L21/02263 ,  C23C16/325 ,  C23C16/56 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834

Abstract: A method of forming a carbon-rich silicon carbide-like dielectric film having a carbon concentration of greater than, or equal to, about 30 atomic % C and a dielectric constant of less than, or equal to, about 4.5 is provided. The dielectric film may optionally include nitrogen. When nitrogen is present, the carbon-rich silicon carbide-like dielectric film has a concentration nitrogen that is less than, or equal, to about 5 atomic % nitrogen.

Abstract translation: 提供了形成碳浓度大于或等于约30原子％C并且介电常数小于或等于约4.5的富碳碳化硅状电介质膜的方法。 电介质膜可以任选地包括氮。 当存在氮时，富含碳的碳化硅状电介质膜具有小于或等于约5原子％氮的浓度氮。