公开(公告)号：US20180138209A1

公开(公告)日：2018-05-17

申请号：US15351678

申请日：2016-11-15

Applicant: GLOBALFOUNDRIES INC.

Inventor： Wen Liu ,  Criag M. Bocash ,  Carole D. Graas ,  Fen Chen

IPC: H01L27/12 ,  H01L23/373 ,  H01L21/3115 ,  H01L21/762

CPC classification number: H01L27/1211 ,  H01L21/02002 ,  H01L21/76251 ,  H01L21/76256 ,  H01L27/1203

Abstract: An SOI substrate includes a metallic doped isolation (i.e., buried oxide) layer. Doping of the isolation layer increases its thermal conductivity, which improves heat conduction and decreases the susceptibility of devices formed on the substrate to temperature-induced deterioration and/or failure over time. The amount as well as the configuration of the doping can be tailored to specific circuit architectures.