公开(公告)号：US20180190792A1

公开(公告)日：2018-07-05

申请号：US15397967

申请日：2017-01-04

Applicant: GLOBALFOUNDRIES INC.

Inventor： Jianwei Peng ,  Hsien-Ching Lo ,  Suresh K. Regonda ,  Edward P. Reis, JR.

IPC: H01L29/66 ,  H01L21/265 ,  H01L21/3065 ,  H01L29/78 ,  H01L29/08 ,  H01L29/06

CPC classification number: H01L29/66636 ,  H01L21/3065 ,  H01L29/6656 ,  H01L29/66795 ,  H01L29/66803 ,  H01L29/785 ,  H01L29/7851

Abstract: The disclosure is directed to a semiconductor structure and method of forming same. The method including: implanting a species within a region of a substrate adjacent to a gate stack; forming a first spacer laterally adjacent to the gate stack over the substrate; and forming an opening within the implanted region of the substrate, the opening being substantially U-shaped and self-aligned with the first spacer. The semiconductor structure including: a fin; a gate stack substantially surrounding the fin; a first pair of spacers over the fin and laterally adjacent to the gate stack; and a pair of substantially U-shaped cavities within the fin and on opposing sides of the gate stack, the pair of substantially U-shaped cavities being self-aligned with the first pair of spacers, wherein the pair of substantially U-shaped cavities are filled with a source/drain material.