公开(公告)号：US20190043769A1

公开(公告)日：2019-02-07

申请号：US15665974

申请日：2017-08-01

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ian D.W. Melville ,  Mukta G. Farooq

IPC: H01L21/66 ,  H01L23/522 ,  H01L23/528 ,  G01R31/28

Abstract: A structure and method for forming a split probe pad structure for a semiconductor structure. The split probe pad structure may include a first probe pad structure over a substrate, the first probe pad structure including a first probe pad in electrical communication with the substrate; a second probe pad structure over the substrate, the second probe pad structure including a second probe pad in electrical communication with the substrate, wherein the second probe pad structure is laterally separated from the first probe pad structure; and a non-metal region between the first probe pad structure and the second probe pad structure. The split probe pad structure may be formed in a kerf region of the semiconductor structure. The non-metal region may include a dielectric material.

公开(公告)号：US20180337089A1

公开(公告)日：2018-11-22

申请号：US16033932

申请日：2018-07-12

Applicant: GLOBALFOUNDRIES INC.

Inventor： Mukta G. Farooq ,  Ian D.W. Melville

IPC: H01L21/768 ,  H01L23/48 ,  H01L23/532

CPC classification number: H01L23/5226 ,  H01L21/76841 ,  H01L21/76879 ,  H01L23/481 ,  H01L23/5283 ,  H01L23/53209 ,  H01L23/53238 ,  H01L23/53252 ,  H01L23/53266 ,  H01L23/53276

Abstract: A method of forming an IC structure, including: forming a first plurality of active devices within a first semiconductor layer over a substrate; forming a first wiring layer over the first semiconductor layer, the first wiring layer including a first metal having a melting point greater than approximately 1400 degrees Celsius (° C.); forming a second semiconductor layer over the first wiring layer; forming a second plurality of active devices within the second semiconductor layer; and forming a second wiring layer over the second semiconductor layer, the second wiring layer including the first metal having a melting point greater than approximately 1400 degrees Celsius (° C.).