Abstract:
An integrated circuit (IC) includes functional logic therein that can be enabled by application of a predefined thermal cycle. The IC includes an enabling fuse operatively coupled to the functional logic, the functional logic being disabled unless enabled by activation of the enabling fuse. A set of thermal sensors are arranged in a physically distributed manner through at least a portion of the IC. A test control macro operatively couples to the set of thermal sensors and the enabling fuse for activating the enabling fuse to enable the functional logic in response to application of a thermal cycle that causes the set of thermal sensors to sequentially experience a thermal condition matching a thermal sequence enabling test. A related method and system for applying the predefined thermal cycle are also provided.
Abstract:
Various embodiments include processors for processing operations. In some cases, a processor includes: an instruction fetch component configured to fetch processing instructions; an instruction cache component connected with the instruction fetch component, configured to store the processing instructions; an execution component connected with the instruction cache component, configured to execute the processing instructions; a monitor component connected with the execution component, configured to receive execution results from the processing instructions; and a content addressable memory (CAM) component connected with the instruction fetch component and the monitor component, wherein the monitor component stores a portion of the execution results in the CAM for subsequent use in bypassing the execution component.
Abstract:
Various particular embodiments include a method of forming an integrated circuit (IC) device including: forming at least one thermoelectric cooling device over an upper surface of a handle wafer based upon a known location of an elevated temperature region in the IC device; forming a first oxide layer over the handle wafer covering the thermoelectric cooling device; forming a second oxide layer over a donor silicon wafer to form a donor wafer; bonding the donor wafer to the handle wafer at the first oxide layer and the second oxide layer, such that the second oxide layer contacts the first oxide layer on the handle wafer; and forming at least one semiconductor device over the donor silicon wafer side of the donor wafer, wherein the at least one thermoelectric cooling device is located proximate the at least one semiconductor device.