公开(公告)号：US09570466B2

公开(公告)日：2017-02-14

申请号：US14159027

申请日：2014-01-20

Applicant: GLOBALFOUNDRIES INC.

Inventor： Ming Cai ,  Dechao Guo ,  Chun-Chen Yeh

IPC: H01L27/12 ,  H01L29/06 ,  H01L21/84 ,  H01L29/78 ,  H01L27/13

CPC classification number: H01L27/1203 ,  H01L21/84 ,  H01L27/13

Abstract: Techniques for fabricating passive devices in an extremely-thin silicon-on-insulator (ETSOI) wafer are provided. In one aspect, a method for fabricating one or more passive devices in an ETSOI wafer is provided. The method includes the following steps. The ETSOI wafer having a substrate and an ETSOI layer separated from the substrate by a buried oxide (BOX) is provided. The ETSOI layer is coated with a protective layer. At least one trench is formed that extends through the protective layer, the ETSOI layer and the BOX, and wherein a portion of the substrate is exposed within the trench. Spacers are formed lining sidewalls of the trench. Epitaxial silicon templated from the substrate is grown in the trench. The protective layer is removed from the ETSOI layer. The passive devices are formed in the epitaxial silicon.

Abstract translation: 提供了在极薄的绝缘体上硅（ETSOI）晶圆上制造无源器件的技术。 在一方面，提供了一种用于在ETSOI晶片中制造一个或多个无源器件的方法。 该方法包括以下步骤。 提供具有衬底的ETSOI晶片和通过掩埋氧化物（BOX）与衬底分离的ETSOI层。 ETSOI层涂有保护层。 形成延伸穿过保护层，ETSOI层和BOX的至少一个沟槽，并且其中衬底的一部分暴露在沟槽内。 在沟槽的侧壁上形成间隔物。 从衬底模板化的外延硅在沟槽中生长。 保护层从ETSOI层去除。 无源器件形成在外延硅中。

公开(公告)号：US09484402B2

公开(公告)日：2016-11-01

申请号：US14662743

申请日：2015-03-19

Applicant: GLOBALFOUNDRIES INC.

Inventor： Ming Cai ,  Dechao Guo ,  Liyang Song ,  Chun-chen Yeh

IPC: H01L29/06 ,  H01L21/762 ,  H01L29/78 ,  H01L29/51

CPC classification number: H01L29/0649 ,  H01L21/76224 ,  H01L29/517 ,  H01L29/7846

Abstract: A method is disclosed for forming a semiconductor device. A first opening is formed for an STI on a semiconductor substrate and a first process is performed to deposit first oxide into the first opening. A second opening is formed to remove a portion of the first oxide from the first opening and second process(es) is/are performed to deposit second oxide into the second opening and over a remaining portion of the first oxide. A portion of the semiconductor device is formed over a portion of a surface of the second oxide. A semiconductor device includes an STI including a first oxide formed in a lower portion of a trench of the STI and a second oxide formed in an upper portion of the trench and above the first oxide. The semiconductor device includes a portion of the semiconductor device formed over a portion of the second oxide.