公开(公告)号：US20150228555A1

公开(公告)日：2015-08-13

申请号：US14176178

申请日：2014-02-10

Applicant: GLOBALFOUNDRIES INC.

Inventor： Mohamed A. RABIE ,  Premachandran CHIRAYARIKATHUVEEDU ,  Mahadeva Iyer NATARAJAN

IPC: H01L23/48 ,  H01L21/321 ,  H01L21/324 ,  H01L21/768 ,  H01L23/00

CPC classification number: H01L23/481 ,  H01L21/3081 ,  H01L21/3212 ,  H01L21/324 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76898 ,  H01L23/3157 ,  H01L23/562 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Structures and methods of fabrication are provided with reduced or cancelled stress within the substrate of the structure adjacent to a through-substrate via. The fabrication method(s) includes: forming a structure with a through-substrate via (TSV) having a reduced device keep-out zone (KOZ) adjacent to the through-substrate via, the forming including: providing the through-substrate via within a substrate of the structure; and providing a stress-offset layer above the substrate selected and configured to provide a desired offset stress to reduce stress within the substrate caused by the presence of the through-substrate via within the substrate. In one embodiment, the stress-offset layer provides a desired compressive stress sufficient to reduce or eliminate tensile stress within the substrate due to the presence of the through-substrate via within the substrate.

Abstract translation: 提供了结构和制造方法，其在邻近通过基板通孔的结构的衬底内具有减小或消除的应力。 制造方法包括：通过具有与贯穿基板通孔相邻的减小的器件保持区（KOZ）的通孔（TSV）形成结构，所述形成包括：通过内部提供贯穿衬底 该结构的基底; 以及在所述衬底之上提供应力偏移层，所述应力偏移层被选择并且被配置为提供期望的偏移应力，以减少由所述衬底内存在所述衬底所引起的衬底内的应力。 在一个实施例中，应力偏移层提供足以减少或消除基板内的拉应力的期望的压缩应力，这是由于在基板内存在贯穿基板。