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公开(公告)号:US09703036B2
公开(公告)日:2017-07-11
申请号:US15041103
申请日:2016-02-11
Applicant: GLOBALFOUNDRIES INC.
Inventor: Zhong-Xiang He , Qizhi Liu , Ronald G. Meunier , Steven M. Shank
CPC classification number: G02B6/12002 , G02B6/122 , G02B6/132 , G02B6/136 , G02B6/42 , G02B2006/121 , G02B2006/12119
Abstract: Disclosed are structures with an optical waveguide having a first segment at a first level and a second segment extending between the first level and a higher second level and further extending along the second level. Specifically, the waveguide comprises a first segment between first and second dielectric layers. The second dielectric layer has a trench, which extends through to the first dielectric layer and which has one side positioned laterally adjacent to an end of the first segment. The waveguide also comprises a second segment extending from the bottom of the trench on the side adjacent to the first segment up to and along the top surface of the second dielectric layer on the opposite side of the trench. A third dielectric layer covers the second segment in the trench and on the top surface of the second dielectric layer. Also disclosed are methods of forming such optoelectronic structures.
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公开(公告)号:US20160170140A1
公开(公告)日:2016-06-16
申请号:US15041103
申请日:2016-02-11
Applicant: GLOBALFOUNDRIES INC.
Inventor: Zhong-Xiang He , Qizhi Liu , Ronald G. Meunier , Steven M. Shank
CPC classification number: G02B6/12002 , G02B6/122 , G02B6/132 , G02B6/136 , G02B6/42 , G02B2006/121 , G02B2006/12119
Abstract: Disclosed are structures with an optical waveguide having a first segment at a first level and a second segment extending between the first level and a higher second level and further extending along the second level. Specifically, the waveguide comprises a first segment between first and second dielectric layers. The second dielectric layer has a trench, which extends through to the first dielectric layer and which has one side positioned laterally adjacent to an end of the first segment. The waveguide also comprises a second segment extending from the bottom of the trench on the side adjacent to the first segment up to and along the top surface of the second dielectric layer on the opposite side of the trench. A third dielectric layer covers the second segment in the trench and on the top surface of the second dielectric layer. Also disclosed are methods of forming such optoelectronic structures.
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